公开(公告)号：US20080032625A1

公开(公告)日：2008-02-07

申请号：US11458476

申请日：2006-07-19

Applicant: David Cheung ,  Sathish K. Kumar

Inventor： David Cheung ,  Sathish K. Kumar

IPC: H04B7/24

CPC classification number: H04W72/1257 ,  H04W88/04

Abstract: Direct communication between devices in a wireless network without going through a base station is described herein. Such communication may be possible by deviating from a transmission map to be broadcasted by the base station of the wireless network.

Abstract translation: 这里描述了无需通过基站的无线网络中的设备之间的直接通信。 可以通过偏离由无线网络的基站广播的传输图来实现这种通信。

公开(公告)号：US20060251629A1

公开(公告)日：2006-11-09

申请号：US11480711

申请日：2006-07-03

Applicant: C. Mills ,  John Bianchi ,  Michael Roberts ,  David Cheung ,  Chandrasekaran Nataraj ,  John Howell

Inventor： C. Mills ,  John Bianchi ,  Michael Roberts ,  David Cheung ,  Chandrasekaran Nataraj ,  John Howell

IPC: A61K38/17 ,  A61K35/12 ,  A61F2/06

CPC classification number: A61L27/3608 ,  A61F2/08 ,  A61F2/105 ,  A61F2002/0894 ,  A61L27/3604 ,  A61L27/3687 ,  A61L27/3691 ,  A61L27/38 ,  A61L27/3826 ,  A61L27/46 ,  A61L27/54 ,  A61L27/56 ,  A61L2300/414 ,  A61L2400/06 ,  A61L2430/02 ,  A61L2430/10 ,  A61L2430/30 ,  B33Y80/00

Abstract: The present invention is directed to a composition comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. Also disclosed is a tissue graft or implant comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. The composition and/or tissue graft or implant of the invention is usable in combination with seeded cells, a tissue growth factor, and/or a chemotactic agent to attract a desired cell.

公开(公告)号：US20060127876A1

公开(公告)日：2006-06-15

申请号：US11345768

申请日：2006-01-19

Applicant: David Cheung

Inventor： David Cheung

IPC: C12N5/06 ,  A01N1/02

CPC classification number: A01N1/02 ,  A01N1/0226 ,  A61K38/39 ,  A61L27/3604 ,  A61L27/3687

Abstract: The invention relates to a method of treatment of collagenous connective tissue removed from a donor for implant into a recipient which is re-habited or re-colonized by host cells without an immune rejection and inflammatory reaction. After removal from the donor the tissue is trimmed and thereafter soaked in a cold stabilizing solution having a temperature range of 4 to 10 degrees centigrade. The tissue is then soaked at a predetermined temperature in a polyglycol, salt, hydrogen peroxide, and phosphate buffer first solution of predetermined quantities and concentrations and of sufficient ionic strength to permit ground substances to dissociate such that the collagen fibers remain stable. The tissue is then soaked in an alcohol and water solution at a predetermined temperature for a sufficient period of time to remove the residue of the first solution. Following the removal of the residue, the tissue is soaked at a predetermined temperature in a third solution of an anti-inflammatory agent, an anti-thrombic agent, alcohol, and water or sequentially in an anti-inflammatory agent, alcohol, and water solution, and then in an anti-thrombic agent, alcohol and water solution and thereafter stored.

Abstract translation: 本发明涉及一种治疗从供体移出的胶原结缔组织的方法，用于植入到受体中，其被宿主细胞重新吸收或重新定植而没有免疫排斥和炎症反应。 从供体移除后，将组织修整，然后在温度范围为4至10摄氏度的冷稳定溶液中浸泡。 然后将组织在预定温度下浸入预定量和浓度的聚二醇，盐，过氧化氢和磷酸盐缓冲液第一溶液中并具有足够的离子强度，以使研磨物质解离，使得胶原纤维保持稳定。 然后将组织在预定温度下在醇和水溶液中浸泡足够的时间以除去第一溶液的残余物。 除去残留物后，将组织在预定温度下在抗炎剂，抗血栓剂，酒精和水的第三溶液中浸泡，或依次在抗炎剂，酒精和水溶液中浸泡 ，然后在抗血栓剂，酒精和水溶液中储存。

公开(公告)号：US20050191846A1

公开(公告)日：2005-09-01

申请号：US11087393

申请日：2005-03-22

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Poon

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Poon

IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

公开(公告)号：US06632735B2

公开(公告)日：2003-10-14

申请号：US09924240

申请日：2001-08-07

Applicant: Wai-Fan Yau ,  Ju-Hyung Lee ,  Nasreen Gazala Chopra ,  Tzu-Fang Huang ,  David Cheung ,  Farhad Moghadam ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Ralf B. Willecke ,  Paul Matthews ,  Dian Sugiarto

Inventor： Wai-Fan Yau ,  Ju-Hyung Lee ,  Nasreen Gazala Chopra ,  Tzu-Fang Huang ,  David Cheung ,  Farhad Moghadam ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Ralf B. Willecke ,  Paul Matthews ,  Dian Sugiarto

IPC: H01L2131

CPC classification number: H01L21/02126 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31633

Abstract: A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.

Abstract translation: 公开了形成碳掺杂氧化硅层的方法。 碳掺杂氧化硅层通过向包含有机硅烷化合物和氧化气体的气体混合物施加电场而形成。 碳掺杂氧化硅层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，碳掺杂氧化硅层用作金属间介电层。 在另一个集成电路制造工艺中，掺杂碳的氧化硅层被结合到镶嵌结构中

公开(公告)号：US06562690B1

公开(公告)日：2003-05-13

申请号：US09594186

申请日：2000-06-13

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC: H01L2176

CPC classification number: H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

Abstract translation: 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10W至约150W的恒定RF功率水平或约20W的脉冲RF功率水平 在占用周期的10％到30％的范围内达到约250W。

公开(公告)号：US06537929B1

公开(公告)日：2003-03-25

申请号：US09580505

申请日：2000-05-25

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert R. Mandal

IPC: H01L2131

CPC classification number: H01L21/76832 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1031

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

公开(公告)号：US06187072B1

公开(公告)日：2001-02-13

申请号：US08741272

申请日：1996-10-30

Applicant: David Cheung ,  Sebastien Raoux ,  Judy H. Huang ,  William N. Taylor, Jr. ,  Mark Fodor ,  Kevin Fairbairn

Inventor： David Cheung ,  Sebastien Raoux ,  Judy H. Huang ,  William N. Taylor, Jr. ,  Mark Fodor ,  Kevin Fairbairn

IPC: B01D4624

CPC classification number: H01J37/32844 ,  B01D45/06 ,  B01D53/32 ,  B01D53/46 ,  B01D2257/206 ,  B01D2259/818 ,  B01J19/08 ,  B01J19/088 ,  B01J19/126 ,  B01J19/249 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2467 ,  B01J2219/247 ,  B01J2219/2474 ,  B01J2219/2475 ,  B01J2219/2487 ,  B01J2219/2493 ,  B01J2219/2496 ,  C23C16/4405 ,  C23C16/4412 ,  H01J37/3244 ,  H01J2237/022 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/4667 ,  H05H2245/1215 ,  Y02C20/30 ,  Y02P70/605

Abstract: An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.

Abstract translation: 用于将从半导体处理设备排出的PFC气体转化为较少有害的非PFC气体的设备。 该装置的一个实施例包括硅滤波器和等离子体产生系统。 等离子体发生系统从流出的PFC气体形成等离子体。 来自等离子体的成分与过滤器中的硅和/或氧反应，并将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。 另一实施例包括等离子体产生系统和颗粒捕集和收集系统。 颗粒捕集和收集系统从产生这种残余物的沉积过程中捕集含硅残渣，等离子体产生系统从流出的PFC气体形成等离子体。 来自等离子体的成分与收集的残余物反应，将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。

公开(公告)号：US06171945B2

公开(公告)日：2001-01-09

申请号：US09177044

申请日：1998-10-22

Applicant: Robert P. Mandal ,  David Cheung ,  Wai-Fan Yau

Inventor： Robert P. Mandal ,  David Cheung ,  Wai-Fan Yau

IPC: H01L2131

CPC classification number: H01L21/76834 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835

Abstract: A method and apparatus for depositing nano-porous low dielectric constant films by reaction of a silicon hydride containing compound or mixture optionally having thermally labile organic groups with a peroxide compound on the surface of a substrate. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a foam structure. The nano-porous silicon oxide based films are useful for filling gaps between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of 1,3,5-trisilanacyclohexane, bis(formyloxysilano)methane, or bis(glyoxylylsilano)methane and hydrogen peroxide followed by a cure/anneal that includes a gradual increase in temperature.

Abstract translation: 一种用于通过含硅氢化物的化合物或任选地具有热不稳定性有机基团的混合物与基质表面上的过氧化物化合物反应沉积纳米多孔低介电常数膜的方法和装置。 将沉积的氧化硅基膜退火以形成留在具有泡沫结构的纳米多孔氧化硅基膜中的分散的微观空隙。 纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间填充间隙。 纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。 优选的纳米多孔氧化硅基膜是通过1,3,5-三硅烷环己烷，双（甲酰氧基甲硅烷基）甲烷或双（乙酰氧基二硅烷基）甲烷和过氧化氢的反应制备的，然后进行包括逐渐升高的固化/退火。

公开(公告)号：US6156149A

公开(公告)日：2000-12-05

申请号：US852788

申请日：1997-05-07

Applicant: David Cheung ,  Judy H. Huang ,  Wai-Fan Yau

Inventor： David Cheung ,  Judy H. Huang ,  Wai-Fan Yau

IPC: H01L21/31 ,  C23C16/52 ,  H01L21/027 ,  H01L21/768 ,  B32B31/00

CPC classification number: C23C16/52 ,  H01L21/0276 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

Abstract: This invention provides a method and apparatus for depositing a two-layer structure, including an antireflective coating and a dielectric layer, without any intervening process steps, such as a cleaning step. The invention is capable of providing more accurate and easier fabrication of structures by reducing inaccuracies caused by the reflection and refraction of incident radiant energy within a photoresist layer used in the patterning of the dielectric layer. Additionally, the antireflective coating of the present invention may also serve as an etch stop layer during the patterning of a layer formed over the antireflective coating.

Abstract translation: 本发明提供了一种用于沉积包括抗反射涂层和电介质层的双层结构的方法和装置，而没有任何中间工艺步骤，例如清洁步骤。 本发明能够通过减少由在电介质层的图形化中使用的光致抗蚀剂层内的入射辐射能的反射和折射引起的不精确度来提供更准确和更容易的结构制造。 此外，本发明的抗反射涂层还可以在形成在抗反射涂层上形成的层的图案化中用作蚀刻停止层。