公开(公告)号：US20110025577A1

公开(公告)日：2011-02-03

申请号：US12533687

申请日：2009-07-31

申请人： Jonathan W. WARD ,  Robert F. Smith ,  Brent M. SEGAL

发明人： Jonathan W. WARD ,  Robert F. Smith ,  Brent M. SEGAL

IPC分类号： H01Q21/00 ,  H01Q1/48 ,  H01Q1/50 ,  H01Q1/38

CPC分类号： H01Q9/0407 ,  H01Q21/08

摘要： A nanotube based microstrip antenna element is provided along with arrays of same. The nanotube based microstrip antenna element comprises a dielectric substrate layer sandwiched between a ground plane layer and a conductive nanotube layer, the conductive nanotube layer shaped to form a radiating structure. In more advanced embodiments, the nanotube based microstrip antenna element further includes an integrated two terminal nanotube switch device such as to provide a selectability function to such microstrip antenna elements and reconfigurable arrays of same. Anisotropic nanotube fabric layers are also used to provide substantially transparent microstrip antenna structures which can be deposited over display screens and the like.

摘要翻译： 基于纳米管的微带天线元件与其阵列一起提供。 纳米管微带天线元件包括夹在接地平面层和导电纳米管层之间的电介质基底层，形成为形成辐射结构的导电纳米管层。 在更先进的实施例中，基于纳米管的微带天线元件还包括集成的二端子纳米管开关器件，以便为这种微带天线元件和可重构阵列提供可选择性功能。 各向异性纳米管织物层也用于提供基本上透明的微带天线结构，其可以沉积在显示屏等上。

公开(公告)号：US20080251723A1

公开(公告)日：2008-10-16

申请号：US12046855

申请日：2008-03-12

申请人： Jonathan W. Ward ,  Elwood James Egerton ,  Rahul Sen ,  Brent M. Segal

发明人： Jonathan W. Ward ,  Elwood James Egerton ,  Rahul Sen ,  Brent M. Segal

IPC分类号： H01L27/144 ,  H01L31/18 ,  H01L31/0264

CPC分类号： G01T1/16 ,  G01J5/02 ,  G01J5/023 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0846 ,  G01J5/0853 ,  G01J5/20 ,  G01J5/24

摘要： Electromagnetic radiation detecting and sensing systems using carbon nanotube fabrics and methods of making the same are provided. In certain embodiments of the invention, an electromagnetic radiation detector includes a substrate, a nanotube fabric disposed on the substrate, the nanotube fabric comprising a non-woven network of nanotubes, and first and second conductive terminals, each in electrical communication with the nanotube fabric, the first and second conductive terminals disposed in space relation to one another. Nanotube fabrics may be tuned to be sensitive to a predetermined range of electromagnetic radiation such that exposure to the electromagnetic radiation induces a change in impedance between the first and second conductive terminals. The detectors include microbolometers, themistors and resistive thermal sensors, each constructed with nanotube fabric. Nanotube fabric detector arrays may be formed for broad-range electromagnetic radiation detecting. Methods for making nanotube fabric detectors, arrays, microbolometers, thermistors and resistive thermal sensors are each described.

摘要翻译： 提供了使用碳纳米管织物的电磁辐射检测和感测系统及其制造方法。 在本发明的某些实施例中，电磁辐射检测器包括衬底，布置在衬底上的纳米管织物，纳米管织物包括纳米管的无纺网络，以及第一和第二导电端子，每个与纳米管织物电连通 ，所述第一和第二导电端子彼此空间关系地设置。 纳米管织物可以被调谐为对预定范围的电磁辐射敏感，使得暴露于电磁辐射会引起第一和第二导电端子之间的阻抗变化。 检测器包括微伏表，电阻器和电阻式热传感器，每个由纳米管织物构成。 纳米管织物检测器阵列可以形成用于宽范围电磁辐射检测。 每个都描述制造纳米管织物检测器，阵列，微量热敏电阻，热敏电阻和电阻热传感器的方法。

公开(公告)号：US20080158936A1

公开(公告)日：2008-07-03

申请号：US11835612

申请日：2007-08-08

申请人： Claude L. BERTIN ,  Thomas RUECKES ,  Jonathan W. WARD ,  Frank GUO ,  Steven L. KONSEK ,  Mitchell MEINHOLD

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  Jonathan W. WARD ,  Frank GUO ,  Steven L. KONSEK ,  Mitchell MEINHOLD

IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C17/18

CPC分类号： B82Y10/00 ,  G11C11/56 ,  G11C13/003 ,  G11C13/025 ,  G11C19/00 ,  G11C29/86 ,  G11C2213/19 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206

摘要： A non-volatile resistive memory is provided. The memory includes at least one non-volatile memory cell and selection circuitry. Each memory cell has a two-terminal nanotube switching device having and a nanotube fabric article disposed between and in electrical communication with two conductive terminals. Selection circuitry is operable to select the two-terminal nanotube switching device for read and write operations. Write control circuitry, responsive to a control signal, supplies write signals to a selected memory cell to induce a change in the resistance of the nanotube fabric article, the resistance corresponding to an informational state of the memory cell. Resistance sensing circuitry in communication with a selected nonvolatile memory cell, senses the resistance of the nanotube fabric article and provides the control signal to the write control circuitry. Read circuitry reads the corresponding informational state of the memory cell.

摘要翻译： 提供了非易失性电阻性存储器。 存储器包括至少一个非易失性存储单元和选择电路。 每个存储单元具有两端纳米管切换装置，其具有设置在两个导电端子之间并与两个导电端子电连通的纳米管织物制品。 选择电路可操作以选择用于读和写操作的两端纳米管切换装置。 响应于控制信号的写控制电路向所选存储单元提供写入信号，以引起纳米管织物物品的电阻变化，该电阻对应于存储单元的信息状态。 与所选择的非易失性存储器单元通信的电阻感测电路感测纳米管织物制品的电阻并将控制信号提供给写入控制电路。 读取电路读取存储单元的相应信息状态。

公开(公告)号：US07365632B2

公开(公告)日：2008-04-29

申请号：US11230876

申请日：2005-09-20

申请人： Claude L. Bertin ,  Thomas Ruckes ,  Brent M. Segal ,  Jonathan W. Ward

发明人： Claude L. Bertin ,  Thomas Ruckes ,  Brent M. Segal ,  Jonathan W. Ward

IPC分类号： H01C10/00

CPC分类号： H01C7/06 ,  H01C7/003 ,  H01C7/005 ,  H01C7/006 ,  H01C10/306 ,  H01C17/0652 ,  H01C17/232 ,  H01C17/283 ,  H01L28/22

摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

摘要翻译： 电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。 元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。 体积电阻是可调谐的。

公开(公告)号：US07274078B2

公开(公告)日：2007-09-25

申请号：US11158544

申请日：2005-06-22

申请人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

发明人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01L27/14

CPC分类号： G11C13/025 ,  B81B2203/0338 ,  B81B2203/04 ,  B81C1/00142 ,  B81C2201/0109 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/22 ,  G11C11/56 ,  G11C13/0033 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L51/0048 ,  H01L2221/1094 ,  Y10S977/943

摘要： Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.

公开(公告)号：US08631562B2

公开(公告)日：2014-01-21

申请号：US12953076

申请日：2010-11-23

申请人： Claude L. Bertin ,  Brent M. Segal ,  Thomas Rueckes ,  Jonathan W. Ward

发明人： Claude L. Bertin ,  Brent M. Segal ,  Thomas Rueckes ,  Jonathan W. Ward

IPC分类号： H01H11/00 ,  H01H65/00

CPC分类号： H01L23/62 ,  B82Y10/00 ,  G11C13/025 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01L23/60 ,  H01L27/0248 ,  H01L27/0251 ,  H01L51/0048 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/3011 ,  H05K1/0259 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49204

摘要： An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment.

摘要翻译： 用于保护受保护电路的静电放电（ESD）保护电路耦合到输入焊盘。 ESD电路包括电子控制的纳米管开关。 开关耦合到保护电路和放电路径。 纳米管开关可以响应于控制的电刺激而被控制在去激活状态和激活状态之间。 激活状态产生电流路径，使得输入焊盘上的信号流到放电路径，使输入焊盘处的信号保持在受保护电路的预定可操作范围内。 纳米管开关，输入焊盘和受保护电路可以在半导体芯片上。 纳米管开关可以在芯片载体上。 根据实施例，去激活状态和激活状态可以是易失性的或非易失性的。

公开(公告)号：US08125824B1

公开(公告)日：2012-02-28

申请号：US12875044

申请日：2010-09-02

申请人： Jonathan W. Ward ,  Adrian N. Robinson ,  Scott Anderson

发明人： Jonathan W. Ward ,  Adrian N. Robinson ,  Scott Anderson

IPC分类号： G11C11/34

CPC分类号： G11C13/025 ,  B82Y10/00

摘要： A nanotube random access memory (NRAM) structure is provided. The structure includes a substrate, a gate electrode disposed in the substrate, and a first nanotube fabric disposed on the substrate. The first nanotube fabric has a channel region spaced apart from the gate electrode by a portion of the substrate. The structure also includes a drain contact contacting the first nanotube fabric. The structure also includes a second nanotube fabric disposed on the substrate, and is adjacent and connected to the first nanotube fabric. The structure also includes a source contact contacting the second nanotube fabric. The first nanotube fabric is a high-voltage fabric compared to the second nanotube fabric such that when a voltage is applied across the first nanotube fabric and the second nanotube fabric via the drain contact and the source contact, the second nanotube fabric is permitted to switch without switching the first nanotube fabric.

摘要翻译： 提供了纳米管随机存取存储器（NRAM）结构。 该结构包括衬底，设置在衬底中的栅电极和布置在衬底上的第一纳米管织物。 第一纳米管织物具有通过衬底的一部分与栅电极间隔开的沟道区。 该结构还包括接触第一纳米管织物的漏极接触。 该结构还包括布置在基底上并与第一纳米管织物相邻并连接的第二纳米管织物。 该结构还包括接触第二纳米管织物的源极接触。 与第二纳米管织物相比，第一纳米管织物是高电压织物，使得当经由漏极接触和源极接触跨越第一纳米管织物和第二纳米管织物施加电压时，允许第二纳米管织物切换 而不切换第一纳米管织物。

公开(公告)号：US08102018B2

公开(公告)日：2012-01-24

申请号：US11835612

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Jonathan W. Ward ,  Frank Guo ,  Steven L. Konsek ,  Mitchell Meinhold

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Jonathan W. Ward ,  Frank Guo ,  Steven L. Konsek ,  Mitchell Meinhold

IPC分类号： G11C11/56 ,  G11C5/00 ,  H01L29/00

CPC分类号： B82Y10/00 ,  G11C11/56 ,  G11C13/003 ,  G11C13/025 ,  G11C19/00 ,  G11C29/86 ,  G11C2213/19 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206

摘要： A non-volatile resistive memory is provided. The memory includes at least one non-volatile memory cell and selection circuitry. Each memory cell has a two-terminal nanotube switching device having and a nanotube fabric article disposed between and in electrical communication with two conductive terminals. Selection circuitry is operable to select the two-terminal nanotube switching device for read and write operations. Write control circuitry, responsive to a control signal, supplies write signals to a selected memory cell to induce a change in the resistance of the nanotube fabric article, the resistance corresponding to an informational state of the memory cell. Resistance sensing circuitry in communication with a selected nonvolatile memory cell, senses the resistance of the nanotube fabric article and provides the control signal to the write control circuitry. Read circuitry reads the corresponding informational state of the memory cell.

摘要翻译： 提供了非易失性电阻性存储器。 存储器包括至少一个非易失性存储单元和选择电路。 每个存储单元具有两端纳米管切换装置，其具有设置在两个导电端子之间并与两个导电端子电连通的纳米管织物制品。 选择电路可操作以选择用于读和写操作的两端纳米管切换装置。 响应于控制信号的写控制电路向所选存储单元提供写入信号，以引起纳米管织物物品的电阻变化，该电阻对应于存储单元的信息状态。 与所选择的非易失性存储器单元通信的电阻感测电路感测纳米管织物制品的电阻并将控制信号提供给写入控制电路。 读取电路读取存储单元的相应信息状态。

公开(公告)号：US08013363B2

公开(公告)日：2011-09-06

申请号：US11835759

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： H01L27/10

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  H01L21/8221 ,  H01L23/5256 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： Under one aspect, a nonvolatile nanotube diode includes: a substrate; a semiconductor element disposed over the substrate, the semiconductor element having an anode and a cathode and capable of forming an electrically conductive pathway between the anode and the cathode; a nanotube switching element disposed over the semiconductor element, the nanotube switching element including a conductive contact and a nanotube fabric element capable of a plurality of resistance states; and a conductive terminal disposed in spaced relation to the conductive contact, wherein the nanotube fabric element is interposed between and in electrical communication with the conductive contact and the conductive contact is in electrical communication with the cathode, and wherein in response to electrical stimuli applied to the anode and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the anode and the conductive terminal.

摘要翻译： 在一个方面，非易失性纳米管二极管包括：基板; 设置在所述衬底上的半导体元件，所述半导体元件具有阳极和阴极，并且能够在所述阳极和所述阴极之间形成导电通路; 设置在所述半导体元件上的纳米管开关元件，所述纳米管开关元件包括导电接触件和能够具有多个电阻状态的纳米管织物元件; 以及导电端子，其以导电接触件的间隔设置，其中所述纳米管织物元件置于所述导电接触件之间并与所述导电接触件电连通，并且所述导电接触件与所述阴极电连通，并且其中响应于施加到 阳极和导电端子，非易失性纳米管二极管能够在阳极和导电端子之间形成导电通路。

公开(公告)号：US20100267205A1

公开(公告)日：2010-10-21

申请号：US12066063

申请日：2006-09-05

申请人： Jonathan W. Ward ,  Claude L. Bertin ,  Brent M. Segal

发明人： Jonathan W. Ward ,  Claude L. Bertin ,  Brent M. Segal

IPC分类号： H01L23/373 ,  H01L21/70 ,  H01L21/02

CPC分类号： H01L23/373 ,  H01L23/433 ,  H01L24/28 ,  H01L24/31 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/14 ,  Y10S977/80 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Under one aspect, a method of cooling a circuit element includes providing a thermal reservoir having a temperature lower than an operating temperature of the circuit element; and providing a nanotube article in thermal contact with the circuit element and with the reservoir, the nanotube article including a non-woven fabric of nanotubes in contact with other nanotubes to define a plurality of thermal pathways along the article, the nanotube article having a nanotube density and a shape selected such that the nanotube article is capable of transferring heat from the circuit element to the thermal reservoir.

摘要翻译： 在一个方面，冷却电路元件的方法包括提供具有低于电路元件的工作温度的温度的热存储器; 并且提供与所述电路元件和所述储存器热接触的纳米管制品，所述纳米管制品包括与其它纳米管接触的纳米管的无纺织物以限定沿着所述制品的多个热路径，所述纳米管制品具有纳米管 密度和形状，使得纳米管制品能够将热量从电路元件传递到热储存器。