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    Cobalt filling of interconnects in microelectronics
    42.
    发明授权
    Cobalt filling of interconnects in microelectronics 有权

    公开(公告)号：US11434578B2

    公开(公告)日：2022-09-06

    申请号：US17220540

    申请日：2021-04-01

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

    IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

    Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

    High Elongation Electroless Copper Process
    45.
    发明申请
    High Elongation Electroless Copper Process 有权

    公开(公告)号：US20220081776A1

    公开(公告)日：2022-03-17

    申请号：US17018004

    申请日：2020-09-11

    Applicant: MacDermid Enthone Inc.

    Inventor： Roger Bernards

    IPC: C23C18/40 ,  C23C18/16

    Abstract: An electroless copper deposition composition, comprising: (a) a source of copper ions; (b) a chelator; (c) a source of alkalinity; (d) a reducing agent; (e) nickel ions; (f) a bipyridine; (g) optionally, an additional stabilizer; and (h) optionally, a water soluble polymer. The electroless copper deposition composition can be used to deposit a ductile copper deposit on a substrate that exhibits high % elongation and high tensile strength.

    Cobalt chemistry for smooth topology
    47.
    发明授权
    Cobalt chemistry for smooth topology 有权

    公开(公告)号：US11230778B2

    公开(公告)日：2022-01-25

    申请号：US16713871

    申请日：2019-12-13

    Applicant: MacDermid Enthone Inc.

    Inventor： Shaopeng Sun ,  Kyle Whitten ,  Stephan Braye ,  Elie Najjar

    IPC: C25D3/16 ,  C25D5/02 ,  C25D7/12 ,  C25D5/18

    Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

    Gold Plating Bath and Gold Plated Final Finish
    48.
    发明申请
    Gold Plating Bath and Gold Plated Final Finish 有权

    公开(公告)号：US20210371998A1

    公开(公告)日：2021-12-02

    申请号：US16884314

    申请日：2020-05-27

    Applicant: MacDermid Enthone Inc.

    Inventor： Roger Bernards ,  Emely Abel-Tatis

    IPC: C25D3/48 ,  H05K3/18 ,  H05K3/46

    Abstract: An autocatalytic gold bath capable of depositing gold from solution onto a substrate, wherein the substrate has one or more metal layers thereon. The autocatalytic gold bath includes (a) a chelator; (b) a gold salt; and (c) a reducing agent, wherein the reducing agent comprises an organic molecule having more than one carbon atom on the organic molecule. A process of plating gold onto the surface of the one or more metal layers on the substrate is also included. The gold plating bath can be used to deposit a final finish to the surface of the one or more metal layers which can be formed in an ENIG, ENEPIG, EPAG, direct gold over copper or gold over silver process.

    Cobalt Filling of Interconnects in Microelectronics
    50.
    发明申请
    Cobalt Filling of Interconnects in Microelectronics 审中-公开

    公开(公告)号：US20200040478A1

    公开(公告)日：2020-02-06

    申请号：US15739314

    申请日：2016-06-30

    Applicant: MacDermid Enthone Inc.

    Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun

    IPC: C25D7/12 ,  C25D3/56 ,  C25D3/16

    Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

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