公开(公告)号：US20120012884A1

公开(公告)日：2012-01-19

申请号：US13165837

申请日：2011-06-22

Applicant: Eiji MURAMOTO ,  Shinya NUNOUE

Inventor： Eiji MURAMOTO ,  Shinya NUNOUE

IPC: H01L33/62

CPC classification number: H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light emitting device according to an embodiment includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer, and emitting light; a p-type semiconductor layer formed on the active layer; a p-electrode formed on the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic %; and an n-electrode formed on a second region of the n-type semiconductor layer.

Abstract translation: 根据实施例的半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上并且发射光的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p电极，并且包括氧含量低于40原子％的第一导电氧化物层; 以及形成在n型半导体层的第二区域上的n电极。

公开(公告)号：US20120007113A1

公开(公告)日：2012-01-12

申请号：US13032907

申请日：2011-02-23

Applicant: Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

Inventor： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

IPC: H01L33/26

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。

公开(公告)号：US20120007047A1

公开(公告)日：2012-01-12

申请号：US13238818

申请日：2011-09-21

Applicant: Eiji MURAMOTO ,  Shinya Nunoue

Inventor： Eiji MURAMOTO ,  Shinya Nunoue

IPC: H01L33/06 ,  H01L33/36 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

Abstract: A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

Abstract translation: 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US20110220935A1

公开(公告)日：2011-09-15

申请号：US12874625

申请日：2010-09-02

Applicant: Toru GOTODA ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

Inventor： Toru GOTODA ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

IPC: H01L33/32 ,  H01L21/268

CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The light emitting element having a light extraction surface. The first electrode layer on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface of the light emitting element. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The light emitting element has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.

Abstract translation: 半导体发光器件具有发光元件，第一电极层，第二电极层，种子电极层和镀层。 发光元件在基板上具有基于氮化物的III-V族化合物半导体。 发光元件具有光提取面。 光提取面上的第一电极层。 第二电极层设置在与发光元件的光提取面相反的表面上。 种子电极层构造成覆盖第二电极层的整个表面。 电镀层设置在种子电极层上。 发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。 发光元件具有按照第二导电类型半导体层，发光层和第一导电类型半导体层的顺序逐渐变窄的宽度的正锥形形状。

公开(公告)号：US20110216552A1

公开(公告)日：2011-09-08

申请号：US12876738

申请日：2010-09-07

Applicant: Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

Inventor： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Masaki Tohyama

IPC: F21V8/00 ,  F21V9/16

CPC classification number: F21K9/64 ,  F21K9/232 ,  F21V3/00 ,  F21Y2101/00 ,  F21Y2115/30

Abstract: An embodiment of the invention provides a light emitting device in which a semiconductor laser diode is used as a light source to emit visible light in a wide range. The light emitting device includes a semiconductor laser diode that emits a laser beam; and a luminescent component that is provided while separated from the semiconductor laser diode and absorbs the laser beam to emit the visible light. In the light emitting device, the luminescent component includes an optical path through which the laser beam is incident to a center portion of the luminescent component.

Abstract translation: 本发明的实施例提供了一种发光器件，其中使用半导体激光二极管作为光源来发射宽范围的可见光。 发光器件包括发射激光束的半导体激光二极管; 以及与半导体激光二极管分离并吸收激光束以发出可见光的发光元件。 在发光装置中，发光部件包括激光束入射到发光部件的中心部分的光路。

公开(公告)号：US20110215370A1

公开(公告)日：2011-09-08

申请号：US12873753

申请日：2010-09-01

Applicant: Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

Inventor： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue ,  Kazufumi Shiozawa ,  Takayoshi Fujii

IPC: H01L33/26

CPC classification number: H01L33/20 ,  H01L33/46

Abstract: According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

Abstract translation: 根据一个实施例，提供了具有高光提取效率的半导体发光器件。 半导体发光器件包括透光衬底; 形成在所述透光基板的顶面侧上方或上方的第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层的顶面上的由氮化物半导体制成的有源层; 形成在有源层的顶面上的第二导电类型的氮化物半导体层; 介电层，其形成在所述透光性基板的底面上，折射率低于所述透光性基板的折射率; 以及形成在电介质层的底面上的金属层。 并且透光基板和电介质层之间的界面是不平坦的面，并且介电层和金属层之间的界面是平坦的面。

公开(公告)号：US20110215351A1

公开(公告)日：2011-09-08

申请号：US12875822

申请日：2010-09-03

Applicant: Shigeya Kimura ,  Hajime Nago ,  Toshiyuki Oka ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shinya Nunoue

Inventor： Shigeya Kimura ,  Hajime Nago ,  Toshiyuki Oka ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shinya Nunoue

IPC: H01L33/32 ,  H01L33/30

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/3216 ,  H01S5/34333

Abstract: According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less.

Abstract translation: 根据一个实施例，半导体发光器件包括包括氮化物半导体的n型半导体层，包括氮化物半导体的p型半导体层，发光部分和层叠体。 发光部分设置在n型和p型半导体层之间，并且包括阻挡层和阱层。 阱层与阻挡层堆叠。 所述层叠体设置在所述发光部和所述n型半导体层之间，并且包括第一层和第二层。 第二层与第一层堆叠。 平均层叠体的组成比高于发光部的平均In组成比的0.4倍。 阻挡层的层厚度tb为10纳米以下。

公开(公告)号：US20110204411A1

公开(公告)日：2011-08-25

申请号：US12875560

申请日：2010-09-03

Applicant: Hajime NAGO ,  Koichi TACHIBANA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

Inventor： Hajime NAGO ,  Koichi TACHIBANA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

IPC: H01L33/32 ,  H01L33/30

CPC classification number: H01L33/24 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

Abstract: According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1≦x

Abstract translation: 根据一个实施例，公开了用于在衬底的主表面上生长氮化物半导体的晶体的晶体生长方法。 主表面配有凹凸。 该方法可以包括以不大于0.1微米/小时的速率在主表面上沉积缓冲层。 缓冲层包括GaxAl1-xN（0.1＆nlE; x <0.5），并且具有不小于20纳米且不大于50纳米的厚度。 此外，该方法可以包括在沉积缓冲层时在高于衬底的温度的温度下在缓冲层上生长包括氮化物半导体的晶体。

公开(公告)号：US20110197808A1

公开(公告)日：2011-08-18

申请号：US12874594

申请日：2010-09-02

Applicant: Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

IPC: C30B25/10

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0254 ,  H01L33/007

Abstract: Certain embodiments provide a crystal growth method for nitride semiconductors, including: growing a first semiconductor layer containing InxGa1-xN (0

Abstract translation: 某些实施例提供了一种用于氮化物半导体的晶体生长方法，其包括：在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

公开(公告)号：US20110147776A1

公开(公告)日：2011-06-23

申请号：US12874839

申请日：2010-09-02

Applicant: Toshiki HIKOSAKA ,  Takahiro SATO ,  Iwao MITSUISHI ,  Shinya NUNOUE

Inventor： Toshiki HIKOSAKA ,  Takahiro SATO ,  Iwao MITSUISHI ,  Shinya NUNOUE

IPC: H01L33/58

CPC classification number: H01L33/504 ,  H01L24/29 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

Abstract translation: 根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。 半导体发光元件发射第一光。 半导体发光元件被放置在安装构件上。 第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。 第一透明层对于第一光和第二光是透明的。