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96 条记录 (耗时 0.015 秒)

    Method for fabricating planar semiconductor wafers
    41.
    发明申请
    Method for fabricating planar semiconductor wafers 有权
    制造平面半导体晶圆的方法

    公开(公告)号：US20060084267A1

    公开(公告)日：2006-04-20

    申请号：US10966074

    申请日：2004-10-14

    申请人： Byung-Sung Kwak ,  Peter Burke ,  Sey-Shing Sun

    发明人： Byung-Sung Kwak ,  Peter Burke ,  Sey-Shing Sun

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76877 ,  C25D5/18 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/7684

    摘要： The present invention relates to a method of fabricating planar semiconductor wafers. The method comprises forming a dielectric layer on a semiconductor wafer surface, the semiconductor wafer surface having vias, trenches and planar regions. A barrier and seed metal layer is then formed on the dielectric layer. The wafer is next place in a plating bath that includes an accelerator, which tends to collect in the vias and trenches to accelerate the rate of plating in these areas relative to the planar regions of the wafer. After the gapfill point is reached, the plating is stopped by removing the plating bias on wafer. An equilibrium period is then introduced into the process, allowing higher concentrations of accelerator additives and other components of the bath)] above the via and trench regions to equilibrate in the plating bath. The bulk plating on the wafer is resumed after equilibration. Over-plating on the wafer in the areas of the vias and trenches is therefore avoided, resulting in a more planar metallization layer on the wafer, without the use of a leveler additive which adversely affects the gapfill capability.

    摘要翻译： 本发明涉及一种制造平面半导体晶片的方法。 该方法包括在半导体晶片表面上形成电介质层，该半导体晶片表面具有通孔，沟槽和平面区域。 然后在电介质层上形成阻挡层和种子金属层。 晶片是包含加速器的镀液中的下一个位置，该加速器倾向于在通路和沟槽中收集，以加速相对于晶片的平面区域在这些区域中的电镀速率。 达到间隙填充点后，通过去除晶片上的电镀偏压来停止电镀。 然后在该过程中引入平衡时段，允许较高浓度的促进剂添加剂和浴中的其它组分）]在通孔和沟槽区域上方在电镀浴中平衡。 平衡后恢复晶片上的块体电镀。 因此避免了在通孔和沟槽区域上的晶片上的过电镀，导致晶片上更平面的金属化层，而不使用不利地影响间隙填充能力的矫直添加剂。

    Forming copper interconnects with Sn coatings
    42.
    发明授权
    Forming copper interconnects with Sn coatings 有权
    与Sn涂层形成铜互连

    公开(公告)号：US06884720B1

    公开(公告)日：2005-04-26

    申请号：US10648602

    申请日：2003-08-25

    申请人： Hongqiang Lu ,  Byung-Sung Kwak ,  Wilbur G. Catabay

    发明人： Hongqiang Lu ,  Byung-Sung Kwak ,  Wilbur G. Catabay

    IPC分类号： H01L21/288 ,  H01L21/44 ,  H01L21/768

    CPC分类号： H01L21/76849 ,  H01L21/2885 ,  H01L21/76867 ,  H01L21/76877

    摘要： A copper interconnect with a Sn coating is formed in a damascene structure by forming a trench in a dielectric layer. The trench is formed by electroplating copper simultaneously with a metal dopant to form a doped copper layer. The top level of the doped copper layer is reduced to form a planarized surface level with the surface of the first dielectric layer. The doped copper is annealed to drive the metal dopants to form a metal dopant capping coating at the planarized top surface of the doped copper layer.

    摘要翻译： 通过在电介质层中形成沟槽，在镶嵌结构中形成具有Sn涂层的铜互连。 沟槽通过同时与金属掺杂剂电镀铜形成掺杂的铜层而形成。 掺杂铜层的顶层被还原成与第一介电层的表面形成平坦化的表面水平。 将掺杂的铜退火以驱动金属掺杂剂，以在掺杂铜层的平坦化顶表面上形成金属掺杂物覆盖涂层。

    Method for the production of serinol
    43.
    发明授权
    Method for the production of serinol 失效
    生产丝氨醇的方法

    公开(公告)号：US06509504B1

    公开(公告)日：2003-01-21

    申请号：US09936062

    申请日：2001-12-12

    申请人： Byong-Sung Kwak ,  Ki-Nam Chung ,  Choon-Gil Kim ,  Ki-Ho Koh

    发明人： Byong-Sung Kwak ,  Ki-Nam Chung ,  Choon-Gil Kim ,  Ki-Ho Koh

    IPC分类号： C07C21510

    CPC分类号： C07C213/02 ,  C07C201/12 ,  C07C215/10 ,  C07C205/15

    摘要： Disclosed is a method for preparing serinol (2-amino-1,3-proanediol). From nitromethane, para-formaldehyde and sodium hydroxide, 1-nitro-1,3-propanediol sodium salt is prepared as a medical intermediate. In a fixed bed, this intermediate is allowed to undergo the continuous hydrogenation of 2-nitro-1,3-propanediol sodium salt and methanol as shown in reaction (1). In addition to being simple, the method is economically favorable and affords the high yield and high purity of serinol.

    摘要翻译： 公开了一种制备丝氨醇（2-氨基-1,3-丙二醇）的方法。 由硝基甲烷，对甲醛和氢氧化钠制备1-硝基-1,3-丙二醇钠盐作为医疗中间体。 在固定床中，如反应（1）所示，使该中间体进行2-硝基-1,3-丙二醇钠盐和甲醇的连续氢化。 除了简单，该方法在经济上是有利的，并提供高产率和高纯度的丝氨醇。

    Method for preparing DL-&agr;-tocopherol with a high yield and high purity
    44.
    发明授权
    Method for preparing DL-&agr;-tocopherol with a high yield and high purity 失效
    以高产率和高纯度制备DL-α-生育酚的方法

    公开(公告)号：US06441200B1

    公开(公告)日：2002-08-27

    申请号：US09711824

    申请日：2000-11-13

    申请人： Sijoon Lee ,  Jeong-Soo Kim ,  Young-Seek Yoon ,  Myung-Jun Kim ,  Jun-Tae Choi ,  Byong-Sung Kwak

    发明人： Sijoon Lee ,  Jeong-Soo Kim ,  Young-Seek Yoon ,  Myung-Jun Kim ,  Jun-Tae Choi ,  Byong-Sung Kwak

    IPC分类号： C07D31172

    CPC分类号： C07D311/74 ,  Y02P20/584

    摘要： Disclosed is a method for preparing DL-&agr;-tocopherol through the condensation of isophytol or phytol derivatives and trimethylhydroquinone (TMHQ) using a catalyst system comprising a divalent metal halogen compound, silica gel and/or silica-alumina, and a Brönsted acid. Isophytol or phytol derivatives are slowly added to trimethylhydroquinone for the condensation thereof at 80 to 135° C. over 30 to 60 min in the presence of the metal halogen and the silica gel and/or silica-alumina. In the presence of the Brönsted acid, the intermediates are converted into the product. The silica gel and/or silica-alumina is washed with a polar solvent for recovery. The catalyst system can remarkably reduce side-reactions upon the condensation of isophytol or phytol derivatives and TMHQ, thus producing DL-&agr;-tocopherol with a high purity at a high yield. Also, the catalyst system can be regenerated in succession because of its being able to avoid the decrease of catalytic activity attributed to the adsorption of organic materials; thus reducing the production cost of DL-&agr;-tocopherol and the quantity of industrial wastes generated. With these advantages, the catalyst system can be effectively used in preparing highly pure DL-&agr;-tocopherol at a high yield on a commercial scale.

    摘要翻译： 公开了使用包含二价金属卤素化合物，硅胶和/或二氧化硅 - 氧化铝和布朗斯台德酸的催化剂体系通过异植醇或植醇衍生物和三甲基氢醌（TMHQ）的缩合制备DL-α-生育酚的方法。 在金属卤素和硅胶和/或二氧化硅 - 氧化铝的存在下，将异佛尔酮或植醇衍生物缓慢加入到三甲基对苯二酚中使其在80至135℃下冷凝30至60分钟。 在布朗斯台德酸的存在下，将中间体转化成产物。 用极性溶剂洗涤硅胶和/或二氧化硅 - 氧化铝以进行回收。 催化剂体系可以显着降低异麦芽糖醇或植醇衍生物和TMHQ冷凝时的副反应，从而以高产率生产高纯度的DL-α-生育酚。 而且，由于能够避免由于有机材料的吸附引起的催化活性的降低，所以可以连续再生催化剂体系。 从而降低DL-α-生育酚的生产成本和产生的工业废物的数量。 利用这些优点，催化剂体系可以有效地以高产率在工业规模上制备高纯度的DL-α-生育酚。

    Thin film batteries and methods for manufacturing same
    48.
    发明授权
    Thin film batteries and methods for manufacturing same 有权
    薄膜电池及其制造方法

    公开(公告)号：US08568571B2

    公开(公告)日：2013-10-29

    申请号：US12124918

    申请日：2008-05-21

    申请人： Byung Sung Kwak ,  Michael Stowell ,  Nety Krishna

    发明人： Byung Sung Kwak ,  Michael Stowell ,  Nety Krishna

    IPC分类号： C23C14/00

    CPC分类号： C23C14/088 ,  C23C14/3414 ,  H01M4/0426 ,  H01M4/1391 ,  H01M4/525 ,  H01M4/5825 ,  H01M6/40 ,  H01M10/052 ,  H01M10/0585

    摘要： A method of fabricating a layer of a thin film battery comprises providing a sputtering target and depositing the layer on a substrate using a physical vapor deposition process enhanced by a combination of plasma processes. The deposition process may include: (1) generation of a plasma between the target and the substrate; (2) sputtering the target; (3) supplying microwave energy to the plasma; and (4) applying radio frequency power to the substrate. A sputtering target for a thin film battery cathode layer has an average composition of LiMaNbZc, wherein 0.20>{b/(a+b)}>0 and the ratio of a to c is approximately equal to the stoichiometric ratio of a desired crystalline structure of the cathode layer, N is an alkaline earth element, M is selected from the group consisting of Co, Mn, Al, Ni and V, and Z is selected from the group consisting of (PO4), O, F and N.

    摘要翻译： 制造薄膜电池层的方法包括提供溅射靶并使用通过等离子体处理的组合增强的物理气相沉积工艺将该层沉积在衬底上。 沉积过程可以包括：（1）在靶和衬底之间产生等离子体; （2）溅射目标; （3）向等离子体提供微波能量; 和（4）向基板施加射频功率。 用于薄膜电池阴极层的溅射靶具有LiMaNbZc的平均组成，其中0.20> {b /（a + b）}> 0，并且a与c的比值近似等于所需晶体结构的化学计量比 的阴极层，N是碱土金属元素，M选自Co，Mn，Al，Ni和V，Z选自（PO4），O，F和N.

    METHOD FOR HIGH VOLUME MANUFACTURING OF THIN FILM BATTERIES
    49.
    发明申请
    METHOD FOR HIGH VOLUME MANUFACTURING OF THIN FILM BATTERIES 审中-公开
    薄膜电池高容量制造方法

    公开(公告)号：US20120214047A1

    公开(公告)日：2012-08-23

    申请号：US13461286

    申请日：2012-05-01

    申请人： BYUNG SUNG KWAK ,  Nety M. Krishna ,  Kurt Eisenbeiser ,  William J. Dauksher ,  Jon Candelaria

    发明人： BYUNG SUNG KWAK ,  Nety M. Krishna ,  Kurt Eisenbeiser ,  William J. Dauksher ,  Jon Candelaria

    IPC分类号： H01M4/70 ,  H01M2/02

    CPC分类号： H01M10/0585 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/052 ,  H01M2300/0068

    摘要： Concepts and methods are provided to reduce the cost and complexity of thin film battery (TFB) high volume manufacturing by eliminating and/or minimizing the use of conventional physical (shadow) masks. Laser scribing and other alternative physical maskless patterning techniques meet certain or all of the patterning requirements. In one embodiment, a method of manufacturing thin film batteries comprises providing a substrate, depositing layers corresponding to a thin film battery structure on the substrate, the layers including, in order of deposition, a cathode, an electrolyte and an anode, wherein at least one of the deposited layers is unpatterned by a physical mask during deposition, depositing a protective coating, and scribing the layers and the protective coating. Further, the edges of the layers may be covered by an encapsulation layer. Furthermore, the layers may be deposited on two substrates and then laminated to form the thin film battery.

    摘要翻译： 提供了概念和方法，以通过消除和/或最小化常规物理（阴影）掩模的使用来降低薄膜电池（TFB）大批量制造的成本和复杂性。 激光划线和其他可选的物理无掩模图案化技术满足某些或所有图案化要求。 在一个实施例中，制造薄膜电池的方法包括提供衬底，在衬底上沉积与薄膜电池结构相对应的层，所述层按沉积顺序包括阴极，电解质和阳极，其中至少 沉积层中的一个在沉积期间由物理掩模未图案化，沉积保护涂层，以及划刻层和保护涂层。 此外，层的边缘可以被封装层覆盖。 此外，可以将这些层沉积在两个基板上，然后层压以形成薄膜电池。