公开(公告)号：US20190010629A1

公开(公告)日：2019-01-10

申请号：US16066159

申请日：2016-12-28

Applicant: Toyo Tanso Co., Ltd.

Inventor： Norihito YABUKI ,  Satoshi TORIMI

IPC: C30B29/36 ,  C30B19/04 ,  C30B9/00 ,  C30B17/00 ,  C30B33/02

Abstract: Provided is a method for producing high-purity SiC single crystal, which is applicable to a process of growing SiC single crystal through a solution growth method. This method is for producing SiC single crystal and includes growing, through a solution growth method, an epitaxial layer on a seed material, at least a surface of which is made of SiC, wherein the SiC single crystal is grown so that impurity concentrations therein measured by secondary ion mass spectrometry are very small. Also provided is a housing container for growing SiC single crystal through a solution growth method using a Si melt, including a feed material that is disposed on at least a surface of the housing container and adds, to the Si melt, an additional material that is SiC and/or C. Performing the solution growth method using this housing container can produce high-purity SiC single crystal without any special treatment.

公开(公告)号：US10137405B2

公开(公告)日：2018-11-27

申请号：US14911593

申请日：2014-06-16

Applicant: TOYO TANSO CO., LTD.

Inventor： Takanori Kawano ,  Takahiro Morishita ,  Hironori Orikasa

IPC: B01J20/00 ,  B01D53/28 ,  B01J20/28 ,  H01M4/86 ,  H01M4/96 ,  B01J20/20 ,  B01D53/26 ,  B01J20/04 ,  B01J20/30 ,  C01B31/00 ,  H01M4/88 ,  H01M8/0234 ,  F25B17/08 ,  F25B30/04

Abstract: A porous carbon that can sufficiently adsorb water vapor on a high humidity side is provided.A porous carbon is characterized by having mesopores and micropores and having a water vapor adsorbed amount ratio, as defined by the following expression (1), of 1.8 or higher. It is particularly preferable that the water vapor adsorbed amount ratio as defined by the following expression (1) be 2.0 or higher. It is also preferable that the water vapor adsorbed amount at a relative humidity of 70% be 50 mg/g or greater. Water vapor adsorbed amount ratio=water vapor adsorbed amount at a relative humidity of 90%/water vapor adsorbed amount at a relative humidity of 70%.  (1)

公开(公告)号：US20170162425A1

公开(公告)日：2017-06-08

申请号：US15321421

申请日：2015-06-01

Applicant: TOYO TANSO CO., LTD.

Inventor： Masato Shinohara ,  Yoshihisa Abe ,  Satoru Nogami

IPC: H01L21/687 ,  C23C16/06 ,  C23C8/20 ,  C23C16/56 ,  C23C16/04 ,  C23C16/32

Abstract: Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).

公开(公告)号：US09644894B2

公开(公告)日：2017-05-09

申请号：US14468524

申请日：2014-08-26

Applicant: TOYO TANSO CO., LTD.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/02 ,  F27D11/00 ,  H01L21/67 ,  F27D7/06 ,  H01L21/673 ,  F27B17/00 ,  F27D5/00 ,  F27D11/02

CPC classification number: F27D11/00 ,  F27B17/0025 ,  F27D5/0037 ,  F27D7/06 ,  F27D11/02 ,  F27D2005/0081 ,  F27D2007/063 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67346 ,  H01L21/67386

Abstract: Provided is a heat treatment container having a small size and capable of efficiently performing a heat treatment on a SiC substrate. A heat treatment container is a container for a heat treatment on a SiC substrate 40 under Si vapor pressure. The SiC substrate 40 is made of, at least in a surface thereof, single crystal SiC. The heat treatment container includes a container part 30 and a substrate holder 50. The container part 30 includes an internal space 33 in which Si vapor pressure is caused. The internal space 33 is partially open. The substrate holder 50 is able to support the SiC substrate 40. When the substrate holder 50 supports the SiC substrate 40, an open portion of the container part 30 is covered so that the internal space 33 is hermetically sealed.

公开(公告)号：US20160064744A1

公开(公告)日：2016-03-03

申请号：US14786470

申请日：2014-04-14

Applicant: NISSAN MOTOR CO., LTD. ,  TOYO TANSO CO., LTD.

Inventor： Tetsuya MASHIO ,  Yoshihisa FURUYA ,  Ken Akizuki ,  Atsushi OHMA ,  Takahiro MORISHITA ,  Yoshio SHODAI

IPC: H01M4/92 ,  H01M8/10

Abstract: ObjectProvided is a catalyst having an excellent durability and being capable of lowering the cost of a fuel cell.Solving MeansDisclosed is a catalyst configured to include a support and alloy particles including platinum and a metal component other than platinum supported on the support, wherein the catalyst includes mesopores having a radius of 1 to 10 nm originated from the support, wherein a mode radius of the mesopores is in a range of 2.5 to 10 nm, and wherein the alloy particles have a catalyst function, and at least a portion of the alloy particles is supported inside the mesopores.

Abstract translation: 提供的目的是具有优异的耐久性并且能够降低燃料电池的成本的催化剂。 解决方法公开了一种催化剂，其被配置为包括载体和包含铂的合金颗粒和负载在载体上的铂以外的金属成分，其中所述催化剂包括起始于载体的半径为1至10nm的介孔，其中模式半径 的介孔在2.5〜10nm的范围内，其中合金粒子具有催化剂功能，并且至少一部分合金粒子被支撑在中孔内。

公开(公告)号：US20150329760A1

公开(公告)日：2015-11-19

申请号：US14712057

申请日：2015-05-14

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  TOYO TANSO CO., LTD.

Inventor： Rentaro MORI ,  Sumio KAMIYA ,  Hitoshi ISHII ,  Kiyohito ITAKURA ,  Yasuhiro TAMAI ,  Tomoharu MINAMI ,  Nobuya MISAKI

IPC: C09K5/14 ,  F01P1/06

CPC classification number: C09K5/14 ,  C01B32/20 ,  C04B35/522 ,  C04B35/565 ,  C04B35/581 ,  C04B2235/3826 ,  C04B2235/3865 ,  C04B2235/425 ,  C04B2235/528 ,  C04B2235/9607 ,  F01P1/06 ,  F02M26/32 ,  F28D21/0003 ,  F28F21/02 ,  F28F21/04 ,  F28F2013/006

Abstract: A graphite sheet includes: a graphite portion made of a graphite; and at least one ceramic filler provided within the graphite portion, having a substantially spherical shape, and made of a ceramic having a thermal conductivity higher than a thermal conductivity in a c-axis direction of the graphite.

Abstract translation: 石墨片包括：由石墨制成的石墨部分; 以及至少一个陶瓷填料，其设置在所述石墨部分内，具有大致球形形状，并且由具有高于所述石墨的c轴方向的导热率的导热性的陶瓷制成。

公开(公告)号：US20150321966A1

公开(公告)日：2015-11-12

申请号：US14652210

申请日：2014-01-28

Applicant: TOYO TANSO CO., LTD.

Inventor： Masato Shinohara

IPC: C04B41/89 ,  C04B35/52 ,  C04B41/50

CPC classification number: C04B41/89 ,  C04B35/522 ,  C04B41/00 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5059 ,  C04B41/5061 ,  C04B41/52 ,  C04B41/53 ,  C23C16/4581 ,  C30B29/36 ,  C30B35/00 ,  H01L21/683 ,  H01L21/68757 ,  Y10T428/24612 ,  Y10T428/265 ,  Y10T428/30 ,  C04B41/4531 ,  C04B41/4519 ,  C04B41/5001 ,  C04B41/5346 ,  C04B41/455 ,  C04B41/5057

Abstract: Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

Abstract translation: 提供了具有优异的耐久性的碳化硅 - 碳化钽复合材料。 碳化硅 - 碳化钽复合材料（1）包括：其表面层至少部分地由第一碳化硅层（12）形成的主体（10）; 碳化钽层（20）; 和第二碳化硅层（13）。 碳化钽层（20）设置在第一碳化硅层（12）的上方。 第二碳化硅层（13）介于碳化钽层（20）和第一碳化硅层（12）之间。 通过X射线光电子能谱测定，第二碳化硅层（13）的C / Si组成比不小于1.2。 通过拉曼光谱测定，第二碳化硅层（13）的G带和D带之间的峰值强度比G / D不小于1.0。

公开(公告)号：US20150294867A1

公开(公告)日：2015-10-15

申请号：US14435383

申请日：2013-11-15

Applicant: TOYO TANSO CO., LTD.

Inventor： Satoshi Torimi ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/04 ,  H01L21/3065 ,  C30B31/22 ,  C30B29/36 ,  C30B33/02 ,  C30B33/08

CPC classification number: H01L21/0445 ,  C30B29/36 ,  C30B31/22 ,  C30B33/02 ,  C30B33/08 ,  C30B33/12 ,  H01L21/3065 ,  H01L29/1608

Abstract: The present application aims to provide a surface treatment method that is able to accurately control the rate of etching a single crystal SiC substrate and thereby enables correct understanding of the amount of etching. In the surface treatment method, the single crystal SiC substrate is etched by a heat treatment performed under Si vapor pressure. At a time of the etching, inert gas pressure in an atmosphere around the single crystal SiC substrate is adjusted to control the rate of etching. Accordingly, correct understanding of the amount of etching is obtained.

Abstract translation: 本申请旨在提供一种能够精确地控制单晶SiC衬底的蚀刻速率从而能够正确理解蚀刻量的表面处理方法。 在表面处理方法中，通过在Si蒸气压下进行的热处理蚀刻单晶SiC衬底。 在蚀刻时，调整在单晶SiC衬底周围的气氛中的惰性气体压力以控制蚀刻速率。 因此，获得对蚀刻量的正确理解。

公开(公告)号：US20140245956A1

公开(公告)日：2014-09-04

申请号：US14351003

申请日：2012-10-12

Applicant: TOYO TANSO CO., LTD.

Inventor： Masaaki Kita ,  Takeshi Kubota ,  Hiroyuki Hirano

IPC: C30B35/00 ,  C23C16/32 ,  C23C16/04

CPC classification number: C30B35/00 ,  C04B41/009 ,  C04B41/5057 ,  C04B41/5059 ,  C04B41/87 ,  C23C16/042 ,  C23C16/325 ,  C23C16/4404 ,  C23C16/4588 ,  C04B35/52 ,  C04B41/4531 ,  C04B41/4572

Abstract: A masking portion (recessed portion) 20 is provided at the center of a rear surface of a carbonaceous substrate 10. The masking portion 20 includes a first bore portion 20a and a second bore portion 20b. The first bore portion 20a has an inner wall in which a female screw portion 21 is formed. A male screw portion 7a of a masking jig 7 is screw-fitted to the female screw portion 21. The masking jig 7 is fixed to a film forming jig 2. The carbonaceous substrate is thus supported in a standing posture, and the carbonaceous substrate is provided, on a surface, with a firm such as a SiC film or a TaC film except for the recessed portion by introducing gas into the apparatus in this supported state.

Abstract translation: 掩模部分（凹部）20设置在碳质基材10的后表面的中心。掩模部分20包括第一孔部分20a和第二孔部分20b。 第一孔部20a具有形成有内螺纹部21的内壁。 掩模夹具7的外螺纹部分7a螺纹配合到阴螺纹部分21.掩模夹具7固定在成膜夹具2上。因此，碳质基底以站立姿态被支撑，碳质基底是 在该支撑状态下，通过将气体引入到装置中，在表面上提供除了凹部之外的诸如SiC膜或TaC膜之类的公司。

公开(公告)号：US20040253447A1

公开(公告)日：2004-12-16

申请号：US10849846

申请日：2004-05-21

Applicant: Toyo Tanso Co., Ltd.

Inventor： Hiroaki Ogura ,  Junji Toyota ,  Hiroshi Hayakawa ,  Hidehiko Nozaki

IPC: B32B009/00

CPC classification number: C04B41/009 ,  B30B11/001 ,  C04B38/00 ,  C04B41/4823 ,  C04B41/5001 ,  C04B41/5059 ,  C04B41/5064 ,  C04B41/51 ,  C04B41/83 ,  C04B41/85 ,  C04B41/87 ,  C04B41/88 ,  Y10T428/30 ,  C04B35/52 ,  C04B38/0054 ,  C04B35/528

Abstract: Long carbonaceous moldings and long carbonaceous products as well as methods of production thereof by which carbonaceous products can be obtained without allowing twisting or curving and with less frequent occurrence of cracking etc. even when subjecting the heat treatment and which are excellent in mass productivity are provided. The long carbonaceous moldings have an aspect ratio of 3 to 20 and showing fluctuations in the density thereof of not more than 0.05 Mg/m3 throughout the whole moldings.

Abstract translation: 提供长碳质成型体和长碳质物，以及即使在经受热处理并且具有优异的批量生产率的情况下，也可以提供可以获得碳质产物而不允许扭曲或弯曲并且发生较少裂纹的生产方法 。 该长碳质成型体的纵横比为3〜20，在整个模制品中，其密度波动不大于0.05Mg / m 3。