公开(公告)号：US20110062466A1

公开(公告)日：2011-03-17

申请号：US12921152

申请日：2009-05-27

申请人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

发明人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

IPC分类号： H01L33/30 ,  H01L29/205 ,  H01L21/205

CPC分类号： H01L33/02 ,  C30B19/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02628 ,  H01L33/0062 ,  H01L33/0079

摘要： Affords AlxGa(1-x)As (0≦x≦1) substrates epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared LEDs, and methods of manufacturing infrared LEDs, whereby a high level of transmissivity is maintained, and through which, in the fabrication of semiconductor devices, the devices prove to have superior light output characteristics. An AlxGa(1-x)As substrate (10a) as disclosed is an AlxGa(1-x)As substrate (10a) furnished with an AlxGa(1-x)As layer (11) having a major surface (11a) and, on the reverse side from the major surface (11a), a rear face (11b), and is characterized in that in the AlxGa(1-x)As layer (11), the amount fraction x of Al in the rear face (11b) is greater the amount fraction x of Al in the major surface (11a). The AlxGa(1-x)As substrate (10a) may additionally be provided with a GaAs substrate (13), contacting the rear face (11b) of the AlxGa(1-x)As layer (11).

摘要翻译： 提供用于红外线LED的外延晶片AlxGa（1-x）As（0＆nlE; x＆nlE; 1）衬底，红外LED，制造AlxGa（1-x）As衬底的方法，制造用于红外LED的外延晶片的方法和制造方法 红外LED，由此保持高水平的透射率，并且在半导体器件的制造中，器件被证明具有优异的光输出特性。 所公开的Al x Ga（1-x）As衬底（10a）是配备有具有主表面（11a）的Al x Ga（1-x）As层（11）的Al x Ga（1-x）As衬底（10a） 其特征在于，在Al x Ga（1-x）As层（11）中，后表面（11b）中的Al的量分数x ）大于主表面（11a）中的Al的量分数x。 Al x Ga（1-x）As衬底（10a）可以另外设置有与Al x Ga（1-x）As层（11）的背面（11b）接触的GaAs衬底（13）。

公开(公告)号：US20110042706A1

公开(公告)日：2011-02-24

申请号：US12990646

申请日：2009-05-27

申请人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

发明人： So Tanaka ,  Kenichi Miyahara ,  Hiroyuki Kitabayashi ,  Koji Katayama ,  Tomonori Morishita ,  Tatsuya Moriwake

IPC分类号： H01L33/30 ,  H01L29/20 ,  H01L33/46 ,  H01L21/20

CPC分类号： H01L33/02 ,  C30B19/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02628 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/30

摘要： Affords AlxGa(1-x)As (0≦x≦1) substrates, epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared LEDs, and methods of manufacturing infrared LEDs, whereby a high level of transmissivity is maintained, and through which, in the fabrication of semiconductor devices, the devices prove to have superior characteristics. An AlxGa(1-x)As substrate (10a) of the present invention is an AlxGa(1-x)As substrate (10a) furnished with an AlxGa(1-x)As layer (11) having a major surface (11a) and, on the reverse side from the major surface (11a), a rear face (11b), and is characterized in that in the AlxGa(1-x)As layer (11), the amount fraction x of Al in the rear face (11b) is greater than the amount fraction x of Al in the major surface (11a). In addition, the AlxGa(1-x)As substrate (10a) is further furnished with a GaAs substrate (13), contacting the rear face (11b) of the AlxGa(1-x)As layer (11).

摘要翻译： 提供Al x Ga（1-x）As（0＆nlE; x＆nlE; 1）衬底，用于红外LED的外延晶片，红外LED，制造Al x Ga（1-x）As衬底的方法，制造用于红外LED的外延晶片的方法， 制造红外LED，由此保持高水平的透射率，并且在半导体器件的制造中证明该器件具有优异的特性。 本发明的Al x Ga（1-x）As衬底（10a）是具有主表面（11a）的Al x Ga（1-x）As层（11）的Al x Ga（1-x）As衬底（10a） 并且在与主表面（11a）相反的一侧具有背面（11b），其特征在于，在Al x Ga（1-x）As层（11）中，后面的Al的量分数x （11b）大于主表面（11a）中的Al的量分数x。 此外，Al x Ga（1-x）As衬底（10a）还具有与Al x Ga（1-x）As层（11）的背面（11b）接触的GaAs衬底（13）。

公开(公告)号：US20100216268A1

公开(公告)日：2010-08-26

申请号：US12539355

申请日：2009-08-11

申请人： Koji Katayama ,  Hiroyuki Kitabayashi ,  Satoshi Arakawa

发明人： Koji Katayama ,  Hiroyuki Kitabayashi ,  Satoshi Arakawa

IPC分类号： H01L21/00

CPC分类号： H01L21/3081 ,  H01L21/32139

摘要： A method of manufacturing a semiconductor element of good characteristics at a reduced manufacturing cost is provided. The manufacturing method of the semiconductor element includes a GaN-containing semiconductor layer forming step, an electrode layer forming step, a step of forming an Al film on the GaN-containing semiconductor layer, a step of forming a mask layer made of a material of which etching rate is smaller than that of a material of the Al film, a step of forming a ridge portion using the mask layer as a mask, a step of retreating a position of a side wall of the Al film with respect to a position of a side wall of the mask layer, a step of forming, on the side surface of the ridge portion and the top surface of the mask layer, a protective film made of a material of which etching rate is smaller than that of the material forming the Al film, and a step of removing the Al film and thereby removing the mask layer and a portion of the protective film formed on the top surface of the mask layer.

摘要翻译： 提供一种以降低的制造成本制造具有良好特性的半导体元件的方法。 半导体元件的制造方法包括含GaN半导体层形成工序，电极层形成工序，在含GaN半导体层上形成Al膜的工序，形成掩模层的工序， 该蚀刻速率小于Al膜的材料的蚀刻速率，使用该掩模层作为掩模形成脊部的步骤，相对于Al膜的位置退回Al膜的侧壁的位置的步骤 掩模层的侧壁，在脊部的侧表面和掩模层的顶表面上形成保护膜，该保护膜的蚀刻速率小于形成该掩模层的材料的蚀刻速率的材料 Al膜，以及除去Al膜，从而除去掩模层和形成在掩模层的顶表面上的保护膜的一部分的步骤。

公开(公告)号：US07491974B2

公开(公告)日：2009-02-17

申请号：US11365642

申请日：2006-02-28

申请人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

发明人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

IPC分类号： H01L27/15

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device is equipped with a GaN substrate; an n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate than the n-type AlxGa1-xN layer; and a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from a second main surface, which is the main surface opposite from the first main surface of the GaN substrate. The second main surface of the GaN substrate includes a region on which cavities and projections are formed. Also, the light-emitting device includes an n-electrode formed on the second main surface of the GaN substrate 1 and a protective film formed to cover the side wall of the n-electrode.

摘要翻译： 发光装置配备有GaN衬底; 在GaN衬底的第一主表面侧上的n型Al x Ga 1-x N层; 位于比n型Al x Ga 1-x N层更远离GaN衬底的p型Al x Ga 1-x N层; 以及位于n型Al x Ga 1-x N层和p型Al x Ga 1-x N层之间的多量子阱（MQW）。 在发光器件中，p型Al x Ga 1-x N层侧被下放，并且从作为与GaN衬底的第一主表面相对的主表面的第二主表面发射光。 GaN衬底的第二主表面包括形成空腔和突起的区域。 此外，发光器件包括形成在GaN衬底1的第二主表面上的n电极和形成为覆盖n电极的侧壁的保护膜。

公开(公告)号：US20060273334A1

公开(公告)日：2006-12-07

申请号：US11362407

申请日：2006-02-24

申请人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

发明人： Youichi Nagai ,  Koji Katayama ,  Hiroyuki Kitabayashi

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01012 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/00014

摘要： A light-emitting device according to the present invention includes: a GaN substrate 1; a n-type AlxGa1-xN layer 3 on a first main surface side of the GaN substrate 1; a p-type AlxGa1-xN layer 5 positioned further away from the GaN substrate 1 compared to the n-type AlxGa1-xN layer 3; a multi-quantum well (MQW) 4 positioned between the n-type AlxGa1-xN layer 3 and the p-type AlxGa1-xN layer 5. In this light-emitting device, the p-type AlxGa1-xN layer 5 side is down-mounted and light is emitted from the second main surface 1a, which is the main surface of the GaN substrate 1 opposite from the first main surface. Hemispherical projections 82 are formed on the second main surface 1a of the GaN substrate 1.

摘要翻译： 根据本发明的发光器件包括：GaN衬底1; 在GaN衬底1的第一主表面侧上的n型Al x Ga 1-x N层3; 位于更远离GaN衬底1的p型Al x Ga 1-x N层5与n型Al x N层5相比较， Ga 1-x N层3; 位于n型Al x Ga 1-x N层3和p型Al x N层3之间的多量子阱（MQW）4， SUB＆gt; Ga 1-x N层5。 在该发光器件中，p型Al x Ga 1-x N层5侧被下放，并且从第二主表面1a发射光 ，其是与第一主表面相对的GaN衬底1的主表面。 在GaN衬底1的第二主表面1a上形成半球形突起82。

公开(公告)号：US20050121688A1

公开(公告)日：2005-06-09

申请号：US11001414

申请日：2004-12-02

申请人： Youichi Nagai ,  Makoto Kiyama ,  Takao Nakamura ,  Takashi Sakurada ,  Katsushi Akita ,  Koji Uematsu ,  Ayako Ikeda ,  Koji Katayama ,  Susumu Yoshimoto

发明人： Youichi Nagai ,  Makoto Kiyama ,  Takao Nakamura ,  Takashi Sakurada ,  Katsushi Akita ,  Koji Uematsu ,  Ayako Ikeda ,  Koji Katayama ,  Susumu Yoshimoto

IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L33/50 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/02 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/58 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00014

摘要： A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 Ω·cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.

摘要翻译： 发光器件包括电阻率为0.5Ω·cm以下的氮化物半导体衬底，与氮化物半导体衬底相比，n型氮化物半导体层和p型氮化物半导体层比n型氮化物半导体 在氮化物半导体衬底的第一主表面侧的层和位于n型氮化物半导体层和p型氮化物半导体层之间的发光层，其中氮化物半导体衬底和p型氮化物半导体之一 层安装在发光的顶侧，而另一个放置在下侧，并且在顶侧放置单个电极。 因此，提供了一种发光装置，其具有简单的结构，从而易于制造，可以长时间提供高的发光效率，并且可以容易地小型化。

公开(公告)号：US06714499B2

公开(公告)日：2004-03-30

申请号：US09769961

申请日：2001-01-26

申请人： Koji Katayama

发明人： Koji Katayama

IPC分类号： G11B390

CPC分类号： G11B7/1387 ,  G11B7/0937 ,  G11B7/122 ,  G11B11/10554 ,  G11B11/10576 ,  G11B11/1058

摘要： A flying optical recording/playback head for near-field optical recording/playback, which is capable of keeping the flying height of an optical lens to be constant and obtaining a stable playback signal, is provided. In the flying optical recording/playback head, a device for controlling the relative position between a slider and the optical lens based on a thermal expansion or a piezoelectric effect of an optical lens supporting member for holding the optical lens on the slider, or a thermal expansion of a portion of the optical lens.

摘要翻译： 提供了一种用于近场光学记录/重放的飞行光学记录/重放头，其能够将光学透镜的飞行高度保持恒定并获得稳定的重放信号。 在飞行光学记录/重放头中，基于用于将光学透镜保持在滑块上的光学透镜支撑构件的热膨胀或压电效应来控制滑块和光学透镜之间的相对位置的装置，或热 光学透镜的一部分的扩展。

公开(公告)号：US06506469B2

公开(公告)日：2003-01-14

申请号：US09863401

申请日：2001-05-24

申请人： Koyata Takahashi ,  Koji Katayama ,  Keiichiro Nishizawa

发明人： Koyata Takahashi ,  Koji Katayama ,  Keiichiro Nishizawa

IPC分类号： B32B302

CPC分类号： G11B11/10584 ,  B32B3/02 ,  B82Y10/00 ,  G11B7/007 ,  G11B7/00718 ,  G11B7/122 ,  G11B7/1372 ,  G11B7/1387 ,  G11B7/24059 ,  G11B7/252 ,  G11B7/2534 ,  G11B7/2542 ,  G11B7/257 ,  G11B7/259 ,  G11B11/10532 ,  G11B11/10554 ,  G11B11/1058 ,  G11B2007/13727 ,  G11B2007/24306 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25713 ,  G11B2007/25715 ,  G11B2007/25716 ,  Y10T428/21

摘要： [Problem]A surface-side reproduction type optical recording medium exhibiting high reliability in continuous tests of recording and being suitable for near field recording capable of obtaining good recording/reproducing characteristics is presented. [Means for solving the problem] The surface-side reproduction type optical recording medium carries out recording or reproducing with laser beams from an optical head having a numerical aperture NA of more than 1 wherein the optical head is floated from the surface of the medium at a height of &lgr;/4 or less where &lgr; is the wavelength of the laser beams, said optical recording medium comprising a substrate, and at least a recording layer and a transparent protective resin layer having a refractive index np of more than the NA formed on the substrate wherein the diameter of the laser beams on the medium surface is from 1.5 &mgr;m to 30 &mgr;m.

摘要翻译： [问题]提出了在连续的记录测试中表现出高可靠性并且适合于能够获得良好的记录/再现特性的近场记录的表面侧再现型光学记录介质。[解决问题的手段]表面侧再现 类型的光记录介质用数值孔径NA大于1的光学头的激光束进行记录或再现，其中光头从介质的表面漂浮在lambd / 4或更小的高度，其中lambd是 激光束的波长，所述光学记录介质包括基底，以及至少记录层和透明保护树脂层，其折射率np大于在基底上形成的NA，其中激光束在介质上的直径 表面为1.5〜30μm。

公开(公告)号：US06465273B1

公开(公告)日：2002-10-15

申请号：US09564194

申请日：2000-05-04

申请人： Hideki Matsubara ,  Koji Katayama ,  Akihiko Saegusa

发明人： Hideki Matsubara ,  Koji Katayama ,  Akihiko Saegusa

IPC分类号： H01L2100

CPC分类号： H01L33/40 ,  H01L33/28 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A light emitting device includes an LED chip fixed to an electrode body via a conductive layer of In or an In alloy. The conductive layer is in ohmic-contact with an n-type ZnSe crystal substrate of the LED chip. To make the device, In or an In alloy is melted on the electrode body, the ZnSe substrate is placed directly on the melted In or In alloy and then subjected to at least one of vibration and pressure to achieve a good bond and ohmic contact between the In or In alloy and the ZnSe substrate.

摘要翻译： 发光器件包括通过In或In合金的导电层固定到电极体的LED芯片。 导电层与LED芯片的n型ZnSe晶体衬底欧姆接触。 为了使器件，In或In合金熔化在电极体上，ZnSe衬底直接放置在熔融的In或In合金中，然后经受至少一个振动和压力，以实现良好的键合和欧姆接触 In或In合金和ZnSe衬底。

公开(公告)号：US06455364B1

公开(公告)日：2002-09-24

申请号：US09526686

申请日：2000-03-15

申请人： Akira Asai ,  Teruhito Oonishi ,  Takeshi Takagi ,  Tohru Saitoh ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Yo Ichikawa

发明人： Akira Asai ,  Teruhito Oonishi ,  Takeshi Takagi ,  Tohru Saitoh ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Yo Ichikawa

IPC分类号： H01L218249

CPC分类号： H01L29/66242 ,  H01L21/763 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/7378

摘要： In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.

摘要翻译： 在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极层。 通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电极开口的范围覆盖集电极层和器件隔离的一部分。 在位于集电体开口内部的半导体基板的一部分上形成作为外部基底的第二导电类型的半导体层，同时在半导体衬底中形成与外部基底相同的导电类型的防漏层。 因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。