公开(公告)号：US4113013A

公开(公告)日：1978-09-12

申请号：US738494

申请日：1976-11-04

Applicant: Will A. Ledoux ,  William Schoen ,  Atul Kumar

Inventor： Will A. Ledoux ,  William Schoen ,  Atul Kumar

IPC: C09K8/60 ,  E21B43/22

CPC classification number: C09K8/607

Abstract: A process for producing petroleum from subterranean formations is disclosed wherein production from the formation is obtained by driving a fluid from an injection well to a production well. The process involves injecting into the formation via the injection well asphaltenes as sacrificial agents to inhibit the deposition of chemical recovery agents such as surfactant on the reservoir matrix. Normally the process would be carried out by first injecting the asphaltenes into the formation through the injection well and following them with a chemical recovery agent. The chemical recovery agent would then be followed by a drive fluid such as water to push the materials to the production well.

公开(公告)号：US20160242149A1

公开(公告)日：2016-08-18

申请号：US14623515

申请日：2015-02-17

Applicant: SANJAY BATRA ,  Atul Kumar

Inventor： SANJAY BATRA ,  Atul Kumar

IPC: H04W72/04

CPC classification number: H04J13/16 ,  H04W12/02 ,  H04W72/00

Abstract: A wireless communication system includes a processor that receives a downlink control information (DCI) associated with a transmission channel used for transmitting a RF signal and a control channel element index associated with the DCI. The processor determines a scrambling code based on the control channel element index for the DCI, scrambles the DCI using the scrambling code, generates a scrambled DCI, and modulates the scrambled. DCI to generate a modulated symbol. The processor uses look-up tables to determine a resource element group (REG) based on the control channel element index, map the modulated symbol to the REG, and generate a transmission frame.

Abstract translation: 无线通信系统包括接收与用于发送RF信号的传输信道相关联的下行链路控制信息（DCI）和与DCI相关联的控制信道单元索引的处理器。 处理器基于DCI的控制信道单元索引确定扰码，使用扰频码对DCI进行加扰，产生加扰的DCI，并对加扰进行调制。 DCI生成调制符号。 处理器使用查找表来基于控制信道元素索引来确定资源元素组（REG），将调制符号映射到REG，并生成传输帧。

公开(公告)号：US09148670B2

公开(公告)日：2015-09-29

申请号：US13306983

申请日：2011-11-30

Applicant: Atul Kumar ,  Ankush Jain ,  Rituja Srivastava

Inventor： Atul Kumar ,  Ankush Jain ,  Rituja Srivastava

IPC: H04N19/436 ,  H04N19/44 ,  H04N19/61 ,  H04N19/65 ,  H04N19/66 ,  G06F11/16 ,  G06F11/20

CPC classification number: H04N19/436 ,  G06F11/1608 ,  G06F11/1629 ,  G06F11/1658 ,  G06F11/1687 ,  G06F11/202 ,  H04N19/44 ,  H04N19/61 ,  H04N19/65 ,  H04N19/66

Abstract: Apparatus for and a method of decompression of block coded video data in a multi-core processor. The processor cores decode respective coded groups of blocks of video data independently, in parallel and deblock respective decoded groups of blocks of video data independently and in parallel with the decode operations and with other deblock operations.

Abstract translation: 用于在多核处理器中对块编码视频数据进行解压缩的装置和方法。 处理器核心独立地并行地解码视频数据块的各个编码组，并且独立地并且与解码操作和其它解块操作并行解码各个解码的视频数据块组。

公开(公告)号：US07425346B2

公开(公告)日：2008-09-16

申请号：US10936156

申请日：2004-09-07

Applicant: Chieh Chen ,  Atul Kumar ,  Yuri Pikovsky ,  Chung J. Lee

Inventor： Chieh Chen ,  Atul Kumar ,  Yuri Pikovsky ,  Chung J. Lee

IPC: B05D5/12 ,  C23C16/18

CPC classification number: H01L21/02271 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/312 ,  H01L21/316 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835 ,  Y10T29/41

Abstract: A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.

Abstract translation: 提供了一种在用于集成电路的衬底上形成杂化无机/有机电介质层的方法，其中所述方法包括通过化学气相沉积在衬底上形成第一电介质层，并在第一电介质上形成第二电介质层 层，其中所述第一介电层和所述第二介电层中的一个由有机介电材料形成，并且其中所述第一介电层和所述第二介电层中的另一个由无机介电材料形成。

公开(公告)号：US20070216300A1

公开(公告)日：2007-09-20

申请号：US11800938

申请日：2007-05-07

Applicant: Chung Lee ,  Chieh Chen ,  Atul Kumar

Inventor： Chung Lee ,  Chieh Chen ,  Atul Kumar

IPC: H01J1/62 ,  B05D5/00

CPC classification number: C08G61/025 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/3127 ,  H01L51/448 ,  Y02E10/549

Abstract: An organic opto-electronic device is disclosed. One embodiment comprises a substrate, one or more organic device layers disposed over the substrate, and a multi-layer barrier disposed over the one or more organic device layers, the multi-layer barrier comprising a parylene-based layer and a layer comprising an ultraviolet protectant material.

Abstract translation: 公开了一种有机光电器件。 一个实施例包括衬底，设置在衬底上的一个或多个有机器件层，以及设置在一个或多个有机器件层上的多层势垒层，所述多层势垒包括聚对二甲苯基层和包含紫外线的层 保护材料。

公开(公告)号：US07238626B2

公开(公告)日：2007-07-03

申请号：US11020422

申请日：2004-12-21

Applicant: Chung J. Lee ,  Atul Kumar

Inventor： Chung J. Lee ,  Atul Kumar

IPC: H01L21/31

CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

Abstract: A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacuum at a temperature above a reversible solid phase transition temperature of the dielectric film to convert the film from a lower temperature phase to a higher temperature phase, and cooling the dielectric thin film at a sufficient rate to a temperature below the solid phase transition temperature of the dielectric thin film to trap substantial portions of the film in the higher temperature phase.

Abstract translation: 公开了一种在通过传输聚合形成电介质薄膜之后稳定聚（对二甲苯）电介质薄膜的方法，其中该方法包括在至少一种还原性气氛和真空中在高于可逆的温度下退火介电薄膜 电介质膜的固相转变温度，以将膜从较低温度相转变为较高温度相，并将电介质薄膜以足够的速率冷却至低于介电薄膜的固相转变温度的温度，以捕获相当大的 在较高温度阶段的薄膜部分。

公开(公告)号：US20070105473A1

公开(公告)日：2007-05-10

申请号：US11271410

申请日：2005-11-09

Applicant: Chung Lee ,  Atul Kumar ,  Chieh Chen

Inventor： Chung Lee ,  Atul Kumar ,  Chieh Chen

IPC: H05B33/10 ,  H01L51/56

CPC classification number: H01L51/5256 ,  Y10T428/1082 ,  Y10T428/2852

Abstract: A method of encapsulating an organic light-emitting device is disclosed, wherein the device includes a light-emitting portion and an electrical contact portion, the method including forming a polymer layer over the light-emitting portion and the electrical contact portion of the device; forming a separation in the polymer layer between a portion of the polymer layer disposed over the light-emitting portion of the device and a portion of the polymer layer disposed over the electrical contact portion of the device; adhering a film removal structure to the portion of the polymer layer disposed over the electrical contact portion of the device; and removing the film removal structure, thereby causing the removal of the portion of the polymer layer disposed over the electrical contact portion of the device.

Abstract translation: 公开了一种封装有机发光器件的方法，其中该器件包括发光部分和电接触部分，该方法包括在器件的发光部分和电接触部分上形成聚合物层; 在所述聚合物层的设置在所述器件的发光部分之上的部分和设置在所述器件的电接触部分之上的聚合物层的一部分之间的聚合物层中形成分离; 将膜去除结构粘附到设置在所述器件的电接触部分上方的聚合物层的部分; 并去除膜去除结构，从而导致去除设置在器件的电接触部分上的聚合物层的部分。

公开(公告)号：US07026052B2

公开(公告)日：2006-04-11

申请号：US10265281

申请日：2002-10-04

Applicant: Chung J. Lee ,  Atul Kumar

Inventor： Chung J. Lee ,  Atul Kumar

IPC: B32B3/00 ,  B32B27/00

CPC classification number: B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855 ,  H01L2924/00

Abstract: The present invention pertains to a processing method to produce a porous polymer film that consists of sp2C—X and HC-sp3Cα—X bonds (wherein, X═H or F), and exhibits at least a crystal melting temperature, (“Tm”). The porous polymer films produced by this invention are useful for fabricating future integrated circuits (“IC's”). The method described herein is useful for preparing the porous polymer films by polymerizing reactive intermediates, formed from a first-precursor, with a low feed rate and at temperatures equal to or below a melting temperature of intermediate (T1m). Second-precursors that do not become reactive intermediates or have an incomplete conversion to reactive intermediates are also transported to a deposition chamber and become an inclusion of the deposited film. By utilizing a subsequent in-situ, post treatment process the inclusions in the deposited film can be removed to leave micro-pores in the resultant film. Annealing methods are used herein to stabilize the polymer films after reactive plasma etching. Furthermore, the present invention pertains to employment of reductive plasma conditions for patterning polymer films that consist of sp2C—X and HC-sp3Cα—X bonds (wherein, X═H, F).

Abstract translation: 本发明涉及一种制备多孔聚合物膜的处理方法，该多孔聚合物膜由sp2C2和HC-sp3-α-X-X 键（其中，XH或F），并且表现出至少一种结晶熔融温度（“T”m“）。 本发明生产的多孔聚合物薄膜可用于制造未来的集成电路（“IC”）。 本文所述的方法可用于通过聚合由第一前体形成的反应性中间体以低进料速率和等于或低于中间体的熔融温度（T 1 SUP）的温度来制备多孔聚合物膜 > ）。 不成为反应性中间体或具有不完全转化为反应性中间体的第二前体也被输送到沉积室并变成沉积膜的包含物。 通过利用随后的原位后处理工艺，可以除去沉积膜中的夹杂物以在所得膜中留下微孔。 本文使用退火方法来稳定反应性等离子体蚀刻后的聚合物膜。 此外，本发明涉及用于构图聚合物薄膜的还原等离子体条件的使用，所述薄膜由sp2S2C和HC-Ⅲ' -X键（其中，XH，F）。

公开(公告)号：US20060046044A1

公开(公告)日：2006-03-02

申请号：US10925701

申请日：2004-08-24

Applicant: Chung Lee ,  Atul Kumar

Inventor： Chung Lee ,  Atul Kumar

IPC: B29C65/00 ,  B32B3/26

CPC classification number: H01L21/7682 ,  B29C55/16 ,  B32B2038/0048 ,  B32B2305/026 ,  B32B2307/204 ,  B32B2457/08 ,  C08J7/04 ,  C08J7/042 ,  C08J2427/12 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3143 ,  H01L21/31695 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76835 ,  Y10T428/249953 ,  Y10T428/31504

Abstract: A method of forming a composite dielectric polymer thin film on a substrate is disclosed, wherein the method includes forming a first substantially continuous layer of a dielectric polymer material on the substrate, forming a porous layer of the dielectric polymer material on the first, substantially continuous layer, and forming a second substantially continuous layer of the dielectric polymer material on the porous layer.

Abstract translation: 公开了一种在基板上形成复合介电聚合物薄膜的方法，其中所述方法包括在基板上形成介电聚合物材料的第一基本连续的层，在第一基本上连续的 并且在所述多孔层上形成所述电介质聚合物材料的第二基本上连续的层。

公开(公告)号：US06962871B2

公开(公告)日：2005-11-08

申请号：US10816205

申请日：2004-03-31

Applicant: Chung J. Lee ,  Atul Kumar

Inventor： Chung J. Lee ,  Atul Kumar

IPC: H01L21/4763 ,  H01L23/58

CPC classification number: H01L21/3122 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02263 ,  H01L21/02348 ,  H01L21/3127

Abstract: An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

Abstract translation: 公开了一种集成电路，其包括在基板上形成的复合聚合物电介质层，其中所述复合聚合物电介质层包括在所述基板上形成的第一含硅烷层，其中所述第一含硅烷层至少部分地由有机硅烷材料形成 ，形成在第一含硅烷层上的聚合物电介质层和形成在聚合物电介质层上的第二含硅烷层。 在一些实施方案中，第一含硅烷层和第二含硅烷层可以由具有至少一个能够进行自由基聚合的不饱和键的有机硅烷材料形成。 还提供了用于制造所公开的集成电路的系统和方法。