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213 条记录 (耗时 0.036 秒)

    Method and apparatus for DC voltage control on RF-powered electrode
    41.
    发明授权
    Method and apparatus for DC voltage control on RF-powered electrode 有权
    RF电源电压直流电压控制方法及装置

    公开(公告)号：US09536711B2

    公开(公告)日：2017-01-03

    申请号：US12047820

    申请日：2008-03-13

    申请人： Rajinder Dhindsa ,  Eric Hudson ,  Alexei Marakhtanov ,  Maryam Moravej ,  Andreas Fischer

    发明人： Rajinder Dhindsa ,  Eric Hudson ,  Alexei Marakhtanov ,  Maryam Moravej ,  Andreas Fischer

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32642 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32623 ,  H01J37/32697

    摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.

    摘要翻译： 在等离子体处理室中，提供了一种处理基板的方法。 该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合 导电耦合环耦合到LE以提供导电路径。 该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。 该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源以及 负直流电源通过RF滤波器控制等离子体处理参数。

    Method for operating an electrical apparatus and circuit breaker
    42.
    发明授权
    Method for operating an electrical apparatus and circuit breaker 有权
    操作电气设备和断路器的方法

    公开(公告)号：US09293288B2

    公开(公告)日：2016-03-22

    申请号：US13596451

    申请日：2012-08-28

    申请人： Andreas Fischer

    发明人： Andreas Fischer

    IPC分类号： H01H47/00 ,  H01H83/00 ,  H02J7/00 ,  H01H71/12

    CPC分类号： H01H71/125 ,  Y10T307/911

    摘要： In order to provide a high impedance between two sensor terminals, for instance for connecting a Rogowski transducer to a circuit breaker, but to prevent the coupling-in of interference signals in the case of a non-connection to the terminals, two auxiliary terminals are connected. In at least one embodiment, they are connected in such a manner that in the basic state, the sensor terminals are short circuited but in the case of a connection, for example of a plug to the sensor terminals and simultaneously to the auxiliary terminals, the short circuit is canceled with external short circuiting of the auxiliary terminals.

    摘要翻译： 为了在两个传感器端子之间提供高阻抗，例如用于将Rogowski换能器连接到断路器，但为了防止在与端子不连接的情况下的干扰信号耦合，两个辅助端子 连接的。 在至少一个实施例中，它们以这样的方式连接：在基本状态下，传感器端子短路，但是在例如连接到传感器端子的插头的情况下，并且与辅助端子同时连接 辅助端子外部短路消除短路。

    Methods for RF pulsing of a narrow gap capacitively coupled reactor
    47.
    发明授权
    Methods for RF pulsing of a narrow gap capacitively coupled reactor 有权
    窄间隙电容耦合反应器的RF脉冲的方法

    公开(公告)号：US08337713B2

    公开(公告)日：2012-12-25

    申请号：US13177627

    申请日：2011-07-07

    申请人： Peter Loewenhardt ,  Mukund Srinivasan ,  Andreas Fischer

    发明人： Peter Loewenhardt ,  Mukund Srinivasan ,  Andreas Fischer

    IPC分类号： H01L21/00 ,  C23F1/00

    CPC分类号： H01J37/32137 ,  H01J37/32082 ,  H01J37/32165

    摘要： A method for etching a layer over a substrate in a process chamber, wherein the process chamber including a first electrode and a second electrode and the first electrode is disposed opposite of the second electrode is provided. The method includes placing the substrate on the second electrode and providing an etching gas into the process chamber. The method also includes providing a first radio frequency (RF) signal into the process chamber and modulating the first RF signal. The method further includes providing a second RF signal into the process chamber and modulating the second RF signal.

    摘要翻译： 提供了一种用于在处理室中的衬底上蚀刻层的方法，其中包括第一电极和第二电极的处理室以及与第二电极相对设置的第一电极。 该方法包括将基板放置在第二电极上并向处理室提供蚀刻气体。 该方法还包括向处理室提供第一射频（RF）信号并调制第一RF信号。 该方法还包括向处理室提供第二RF信号并调制第二RF信号。

    High pressure bevel etch process
    48.
    发明授权
    High pressure bevel etch process 有权
    高压斜面蚀刻工艺

    公开(公告)号：US08323523B2

    公开(公告)日：2012-12-04

    申请号：US13105674

    申请日：2011-05-11

    申请人： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

    发明人： Tong Fang ,  Yunsang S. Kim ,  Andreas Fischer

    IPC分类号： B44C1/22

    CPC分类号： H01L21/02087 ,  H01J37/32366 ,  H01J37/32385 ,  H01L21/02021 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/32138

    摘要： A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.

    摘要翻译： 提供了一种在半导体衬底支撑在半导体衬底支撑件上的斜面等离子体处理室中斜面加工半导体的方法。 该方法包括将斜面蚀刻机抽空至3至100托的压力并将RF电压维持在阈值以下; 将工艺气体流入斜面等离子体处理室; 使所述工艺气体在所述半导体衬底的外围处于等离子体中; 并用等离子体对半导体衬底进行斜面加工。

    DETECTION OF ARCING EVENTS IN WAFER PLASMA PROCESSING THROUGH MONITORING OF TRACE GAS CONCENTRATIONS
    49.
    发明申请
    DETECTION OF ARCING EVENTS IN WAFER PLASMA PROCESSING THROUGH MONITORING OF TRACE GAS CONCENTRATIONS 审中-公开
    通过监测跟踪气体浓度来检测水平等离子体处理中的ARCING事件

    公开(公告)号：US20120175060A1

    公开(公告)日：2012-07-12

    申请号：US13422670

    申请日：2012-03-16

    申请人： Eric Hudson ,  Andreas Fischer

    发明人： Eric Hudson ,  Andreas Fischer

    IPC分类号： H01L21/3065 ,  C23C16/50

    CPC分类号： H01J37/32972 ,  H01J37/32935

    摘要： A method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided. A substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. Process gas is introduced into the reaction chamber. A plasma is generated from the process gas and the substrate is processed with the plasma. Intensities of real-time spectrometry signals of selected gas species produced in the reaction chamber during plasma processing are monitored. The selected gas species are generated by a substrate arcing event. The arcing event is detected when the intensities are above a threshold value.

    摘要翻译： 提供了一种在半导体等离子体处理装置中检测基板电弧的方法。 将衬底放置在等离子体处理设备的反应室中的衬底支撑件上。 将工艺气体引入反应室。 从处理气体产生等离子体，并用等离子体处理衬底。 监测在等离子体处理期间在反应室中产生的选定气体种类的实时光谱信号的强度。 选择的气体种类通过基板电弧事件产生。 当强度高于阈值时，检测到电弧事件。