摘要:
Semiconductor light emitting devices include a substrate having a face, a flexible film that includes therein an optical element, on the face, and a semiconductor light emitting element between the substrate and the flexible film and configured to emit light through the optical element. The face can include a cavity therein, and the semiconductor light emitting element may be in the cavity. The flexible film extends onto the face beyond the cavity, and the optical element overlies the cavity.
摘要:
A light emitting diode (LED) component comprising a submount with an array of LED chips and a lens over the array of LED chips. A diffuser is arranged so that at least some light from the LEDs passes through the diffuser to mix the LED light in the near field. The light passing through the diffuser appears as a mixture of LED chip light when directly viewed. A lighting device is also disclosed comprising an LED component comprising an array of LED chips and a near field diffuser to mix at least some of the light from the LED chips in the near field. A remote reflector is included to reflect at least some the light from the LED component so that is emits from the lighting device in the desired direction.
摘要:
An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.
摘要:
Solid state luminaires and light engines comprising a first group of solid state emitters comprising a first emitter emitting above the black body locus (BBL) in a CIE diagram, and a second emitter emitting below the BBL. The combination of light from the first and second emitters generates an emission color point within a standard deviation of the BBL. A second group of solid state emitters is included, the combination of light from the first and second groups of emitters causes emission within a standard deviation of the black body locus (BBL), wherein varying the intensity of the second group of emitters causes emission from the first and second groups of emitters to vary within a range of color temperatures while still emitting within the standard deviation of the BBL.
摘要:
Solid state lighting components are disclosed having multiple discrete light sources whose light combines to provide the desired emission characteristics. One embodiment of an LED component according to the present invention comprises a rectangular submount. A first group of blue shifted yellow (BSY) LED chips, a second group of BSY LED chips and a group of red LED chips are mounted on the submount. A plurality of contacts is arranged along one of the edges of the submount and accessible from one side of the component for applying electrical signals to the groups of LED chips.
摘要:
Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a first index of refraction is provided in the reflective cavity including the light emitting device. A second quantity of cured encapsulant material having a second index of refraction, different from the first index of refraction, is provided on the first quantity of cured encapsulant material. The first and second index of refraction are selected to provide a buried lens in the reflective cavity.
摘要:
Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要:
Semiconductor light emitting devices are fabricated by placing a suspension including phosphor particles suspended in solvent on at least a portion of a light emitting surface of a semiconductor light emitting element, and evaporating at least some of the solvent to cause the phosphor particles to deposit on at least a portion of the light emitting surface. A coating including phosphor particles is thereby formed on at least a portion of the light emitting surface. Particles other than phosphor also may be coated and solutions wherein particles are dissolved in solvent also may be used.
摘要:
Backlighting systems for color display screens include clusters of LED devices of different colors that are configured to radiate the different colors in a light path that impinges on the color display screen, to provide backlighting on the color display screen. LED device controllers are provided, a respective one of which is configured to control operating parameters of a subset of the clusters of LED devices, a single cluster of LED devices and/or individual LED devices in the individual clusters. The LED device controllers may use a common data line.
摘要:
Fabrication of a light emitting device includes etching of a substrate of the light emitting device. The etch may be an aqueous etch sufficient to increase an amount of light extracted through the substrate. The etch may be a direct aqueous etch of a silicon carbide substrate. The etch may remove damage from the substrate that results from other processing of the substrate, such as damage from sawing the substrate. The etch may remove an amorphous region of silicon carbide in the substrate.