公开(公告)号：US10283352B2

公开(公告)日：2019-05-07

申请号：US15919902

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C23C16/00 ,  H01L21/02 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US20190115254A1

公开(公告)日：2019-04-18

申请号：US16159128

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Ben-Li Sheu ,  Feng Q. Liu ,  Tae Hong Ha ,  Mei Chang ,  Shirish Pethe

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

Abstract: Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

公开(公告)号：US20170213726A1

公开(公告)日：2017-07-27

申请号：US15413956

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Jeffrey W. Anthis ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/02208 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262

Abstract: Provided are acetylide-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a acetylide-based precursor and a reactant in various combinations.

公开(公告)号：US20160064275A1

公开(公告)日：2016-03-03

申请号：US14469980

申请日：2014-08-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Paul F. Ma ,  Hua Ai ,  Jiang Lu ,  Mei Chang ,  David Thompson

IPC: H01L21/768 ,  H01L21/311

CPC classification number: H01L21/76826 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods of selectively depositing a metal selectively onto a metal surface relative to a dielectric surface. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon.

Abstract translation: 相对于电介质表面选择性地将金属选择性地沉积到金属表面上的方法。 方法包括将金属氧化物表面还原成金属表面并保护电介质表面以使其上的沉积最小化。

公开(公告)号：US20250132165A1

公开(公告)日：2025-04-24

申请号：US18382326

申请日：2023-10-20

Applicant: Applied Materials, Inc.

Inventor： Jiajie Cen ,  Feng Q. Liu ,  Zheng Ju ,  Zhiyuan Wu ,  Kevin Kashefi ,  Mark Saly ,  Xianmin Tang

IPC: H01L21/311

Abstract: Methods of removing molybdenum oxide from a surface of a substrate comprise exposing the substrate having a molybdenum oxide layer on the substrate to a halide etchant having the formula RmSiX4-m, wherein m is an integer from 1 to 3, X is selected from iodine (I) and bromine (Br) and R is selected from the group consisting of a methyl group, ethyl group, propyl group, butyl group, cyclohexyl group and cyclopentyl group. The methods may be performed in a back-end-of-the line (BEOL) process, and the substrate contains a low-k dielectric material.

公开(公告)号：US12281387B2

公开(公告)日：2025-04-22

申请号：US17566026

申请日：2021-12-30

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mark Saly ,  David Thompson ,  Annamalai Lakshmanan ,  Avgerinos V. Gelatos ,  Joung Joo Lee

IPC: C23C16/455 ,  C07F17/00 ,  C07F17/02 ,  C23C16/18

Abstract: Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

公开(公告)号：US12281382B2

公开(公告)日：2025-04-22

申请号：US18201442

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/02 ,  C23C16/56 ,  H01L21/02 ,  H01L21/32

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20250125195A1

公开(公告)日：2025-04-17

申请号：US18378828

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Xinke Wang ,  Liqi Wu ,  Qihao Zhu ,  Mark Saly ,  Jiang Lu ,  John Sudijono ,  David Thompson

IPC: H01L21/768 ,  H01L21/02

Abstract: Embodiments of the disclosure relate to methods using an oligomer film to protect a substrate surface. The oligomer film is formed on the substrate surface with a first feature and a second feature each having a feature depth. The first feature has a first critical dimension (CD) and the second feature has a second CD. The semiconductor substrate surface is exposed to one or more monomers to form the oligomer film, and the oligomer film forms selectively on the bottom and fills a portion of the feature depth. The oligomer film fills the feature depth to substantially the same or the same height in each of the first feature and the second feature. Methods of forming semiconductor devices using the oligomer film are also disclosed.

公开(公告)号：US20240420966A1

公开(公告)日：2024-12-19

申请号：US18211044

申请日：2023-06-16

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Wu ,  Zheng Ju ,  Feng Chen ,  Kevin Kashefi ,  Feng Q. Liu ,  Jeffrey W. Anthis

IPC: H01L21/3213 ,  H01L21/3205

Abstract: Embodiments of the disclosure relate to methods of etching a copper material. In some embodiments, the copper material is exposed to a halide reactant to form a copper halide species. The substrate is then heated to remove the copper halide species. In some embodiments, the etching methods are performed at relatively low temperatures. Additional embodiments of the disclosure relate to methods of copper gapfill. In some embodiments, a copper material within a substrate feature is exposed to a halide reactant to form a copper halide species. The copper halide species is then heated and flowed to fill at least a portion of the substrate feature. The reflow methods are performed at lower temperatures than similar reflow methods without formation of the copper halide species.

公开(公告)号：US11946135B2

公开(公告)日：2024-04-02

申请号：US18190246

申请日：2023-03-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/14 ,  C23C16/455 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

CPC classification number: C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.