公开(公告)号：US20240234128A1

公开(公告)日：2024-07-11

申请号：US18095279

申请日：2023-01-10

Applicant: Applied Materials, Inc.

Inventor： Taiki Hatakeyama ,  Bhargav S. Citla ,  Qiang Ma ,  Biao Liu ,  Srinivas D. Nemani

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/02167 ,  H01J37/32146 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116 ,  H01J2237/334

Abstract: Exemplary processing methods may include providing a silicon-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor and the carbon-containing precursor. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber, forming plasma effluents of the hydrogen-containing precursor, and etching the silicon-and-carbon-containing material from a sidewall of the feature within the substrate. The methods may include providing a nitrogen-containing precursor to the processing region of the semiconductor processing chamber, forming plasma effluents of the nitrogen-containing precursor, and doping the silicon-and-carbon-containing material with nitrogen.

公开(公告)号：US11993842B2

公开(公告)日：2024-05-28

申请号：US18072392

申请日：2022-11-30

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Keith Tatseun Wong ,  Srinivas D. Nemani ,  Andrew C. Kummel ,  James Huang ,  Yunil Cho

IPC: C23C16/455 ,  C23C16/40 ,  C23C28/04

CPC classification number: C23C16/405 ,  C23C16/45523 ,  C23C28/04

Abstract: Embodiments described and discussed herein provide methods for selectively depositing a metal oxides on a substrate. In one or more embodiments, methods for forming a metal oxide material includes positioning a substrate within a processing chamber, where the substrate has passivated and non-passivated surfaces, exposing the substrate to a first metal alkoxide precursor to selectively deposit a first metal oxide layer on or over the non-passivated surface, and exposing the substrate to a second metal alkoxide precursor to selectively deposit a second metal oxide layer on the first metal oxide layer. The method also includes sequentially repeating exposing the substrate to the first and second metal alkoxide precursors to produce a laminate film containing alternating layers of the first and second metal oxide layers. Each of the first and second metal alkoxide precursors contains a different metal selected from titanium, zirconium, hafnium, aluminum, or lanthanum.

公开(公告)号：US11955333B2

公开(公告)日：2024-04-09

申请号：US17208719

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Jethro Tannos ,  Bhargav Sridhar Citla ,  Srinivas D. Nemani ,  Ellie Yieh ,  Joshua Alan Rubnitz ,  Erica Chen ,  Soham Sunjay Asrani ,  Nikolaos Bekiaris ,  Douglas Arthur Buchberger, Jr.

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02

CPC classification number: H01L21/02326 ,  C23C16/401 ,  C23C16/4584 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02274 ,  H01J2237/20214 ,  H01J2237/3321

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

公开(公告)号：US11901222B2

公开(公告)日：2024-02-13

申请号：US16792646

申请日：2020-02-17

Applicant: Applied Materials, Inc.

Inventor： Maximillian Clemons ,  Nikolaos Bekiaris ,  Srinivas D. Nemani

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/76837 ,  H01J37/32009 ,  H01L21/02271 ,  H01J2237/3321

Abstract: Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.

公开(公告)号：US11749555B2

公开(公告)日：2023-09-05

申请号：US16706115

申请日：2019-12-06

Applicant: Applied Materials, Inc.

Inventor： Sultan Malik ,  Srinivas D. Nemani ,  Qiwei Liang ,  Adib M. Khan

IPC: H01L21/687 ,  H01L21/673

CPC classification number: H01L21/68742 ,  H01L21/67376 ,  H01L21/67393

Abstract: Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.

公开(公告)号：US11361978B2

公开(公告)日：2022-06-14

申请号：US16926422

申请日：2020-07-10

Applicant: Applied Materials, Inc.

Inventor： Adib M. Khan ,  Qiwei Liang ,  Sultan Malik ,  Srinivas D. Nemani

IPC: H01L21/447 ,  C23C16/452 ,  H01L21/67

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

公开(公告)号：USD941787S1

公开(公告)日：2022-01-25

申请号：US29726488

申请日：2020-03-03

Applicant: Applied Materials, Inc.

Designer： Sultan Malik ,  Srinivas D. Nemani ,  Adib M. Khan ,  Qiwei Liang

公开(公告)号：US11094573B2

公开(公告)日：2021-08-17

申请号：US16198569

申请日：2018-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingyu Qiao ,  Qiwei Liang ,  Viachslav Babayan ,  Seshadri Ramaswami ,  Srinivas D. Nemani

IPC: H01L21/683 ,  C23C16/56 ,  C23C16/40

Abstract: Disclosed herein is an electrostatic chuck (ESC) carrier. The ESC carrier may comprise a carrier substrate having a first surface and a second surface opposite the first surface. A first through substrate opening and a second through substrate opening may pass through the carrier substrate from the first surface to the second surface. A first conductor is in the first through substrate opening, and a second conductor is in the second through substrate opening. The ESC carrier may further comprise a first electrode over the first surface of the carrier substrate and electrically coupled to the first conductor, and a second electrode over the first surface of the carrier substrate and electrically coupled to the second conductor. An oxide layer may be formed over the first electrode and the second electrode.

公开(公告)号：US10954594B2

公开(公告)日：2021-03-23

申请号：US14957440

申请日：2015-12-02

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Qiwei Liang ,  Tobin Kaufman-Osborn ,  Ludovic Godet ,  Srinivas D. Nemani

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  C23C16/455

Abstract: The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

公开(公告)号：US10858727B2

公开(公告)日：2020-12-08

申请号：US15600247

申请日：2017-05-19

Applicant: Applied Materials, Inc.

Inventor： Jingjing Liu ,  Zhong Qiang Hua ,  Adolph Miller Allen ,  Michael W. Stowell ,  Srinivas D. Nemani ,  Chentsau Ying ,  Bhargav Citla ,  Viachslav Babayan ,  Andrej Halabica

IPC: H01J37/34 ,  C23C14/06 ,  C23C14/35 ,  H01J37/32 ,  C23C14/54 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  C23C14/34

Abstract: A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.