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54 条记录 (耗时 0.049 秒)

    Liquid tetracarboxylic dianhydrides and process for the preparation thereof
    41.
    发明授权
    Liquid tetracarboxylic dianhydrides and process for the preparation thereof 有权
    液体四羧酸二酐及其制备方法

    公开(公告)号：US08524921B2

    公开(公告)日：2013-09-03

    申请号：US13202067

    申请日：2009-12-08

    申请人： Tooru Kikuchi ,  Hayato Kotani ,  Katsuyuki Masuda ,  Toshihiko Takasaki

    发明人： Tooru Kikuchi ,  Hayato Kotani ,  Katsuyuki Masuda ,  Toshihiko Takasaki

    IPC分类号： C07D493/00 ,  C07D307/77 ,  C07F7/08

    CPC分类号： C07F7/0838

    摘要： The invention relates to a tetracarboxylic dianhydride represented by the following formula (1). [In formula (1) R1, R2, R3 and R4 each independently represent an alkyl group having from 1 to 5 carbon atoms, m represents a number from 1 to 30, all of the silicon atoms bonding to the norbornane rings are in an exo-configuration with respect to the norbornane rings, and all of the dicarboxylic anhydride groups bonding to the norbornane rings are in an exo-configuration with respect to the norbornane rings.]

    摘要翻译： 本发明涉及由下式（1）表示的四羧酸二酐。 [式（1）中，R 1，R 2，R 3和R 4各自独立地表示碳原子数1〜5的烷基，m表示1〜30的数，与降冰片烷环结合的全部硅原子为外 - 关于降冰片烷环的结构，并且与降冰片烷环结合的所有二羧酸酐基都相对于降冰片烷环具有外部构型。

    Polyamide-imide resin, process for production of polyamide resin, and curable resin composition
    42.
    发明授权
    Polyamide-imide resin, process for production of polyamide resin, and curable resin composition 有权
    聚酰胺酰亚胺树脂，聚酰胺树脂的制造方法和固化性树脂组合物

    公开(公告)号：US08236906B2

    公开(公告)日：2012-08-07

    申请号：US12293648

    申请日：2007-03-20

    申请人： Takako Ejiri ,  Katsuyuki Masuda

    发明人： Takako Ejiri ,  Katsuyuki Masuda

    IPC分类号： C08F283/04

    CPC分类号： C08F290/145 ,  C08F290/14 ,  C08F299/02 ,  C08G18/34 ,  C08G69/00 ,  C08G73/1035 ,  C08G73/12 ,  C08G73/14 ,  C08L79/085

    摘要： A process for production of a polyamide resin having a reactive double bond, the process including a step of reacting a carboxylic acid and a diisocyanate to produce a polyamide resin, wherein the carboxylic acid component includes a carboxylic acid with a reactive double bond. Also, a polyamideimide resin obtainable by reacting a diisocyanate with a diimidedicarboxylic acid and a reactive double bond-containing carboxylic acid, which has a reactive double bond.

    摘要翻译： 一种制备具有反应性双键的聚酰胺树脂的方法，该方法包括使羧酸和二异氰酸酯反应以制备聚酰胺树脂的步骤，其中羧酸组分包括具有反应性双键的羧酸。 另外，通过使二异氰酸酯与具有反应性双键的二亚胺二羧酸和含活性双键的羧酸反应得到的聚酰胺酰亚胺树脂。

    Polishing slurry for metal, and polishing method
    47.
    发明申请
    Polishing slurry for metal, and polishing method 失效
    金属抛光浆和抛光方法

    公开(公告)号：US20090117829A1

    公开(公告)日：2009-05-07

    申请号：US12318376

    申请日：2008-12-29

    申请人： Hiroshi Ono ,  Katsuyuki Masuda ,  Masanobu Habiro

    发明人： Hiroshi Ono ,  Katsuyuki Masuda ,  Masanobu Habiro

    IPC分类号： B24B1/00 ,  B24B29/00

    CPC分类号： B24B37/00 ,  B24B37/04 ,  B24B37/044 ,  C09G1/02 ,  C23F1/42 ,  C23F3/00 ,  C23F3/06 ,  H01L21/3212

    摘要： A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices.

    摘要翻译： 金属研磨用浆料包含氧化剂，金属氧化物溶解剂，金属抑制剂和水，其中金属抑制剂是具有氨基 - 三唑骨架的化合物和具有咪唑骨架的化合物中的至少一种。 通过使用金属研磨用浆料，能够使蚀刻速度保持在较低的水平，提高研磨速度，抑制金属表面的腐蚀和凹陷的产生，形成高的金属膜埋藏图案 在半导体器件布线形成过程中的可靠性。

    Polishing slurry and polishing method
    49.
    发明申请
    Polishing slurry and polishing method 有权
    抛光浆和抛光方法

    公开(公告)号：US20080003924A1

    公开(公告)日：2008-01-03

    申请号：US11808047

    申请日：2007-06-06

    申请人： Yasushi Kurata ,  Katsuyuki Masuda ,  Hiroshi Ono ,  Yasuo Kamigata ,  Kazuhiro Enomoto

    发明人： Yasushi Kurata ,  Katsuyuki Masuda ,  Hiroshi Ono ,  Yasuo Kamigata ,  Kazuhiro Enomoto

    IPC分类号： B24B1/00 ,  C09G1/04

    CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/3212

    摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.

    摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物（A-group），所述酸选自： 其中第一离解酸基团的解离常数Ka（pKa）的对数的负值小于3.7，并且排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，铵盐 的A基团和A基团的酯，以及一种或多种选自一种或多种酸（B族）的化合物，所述酸选自其中解离常数Ka（pKa）的对数的负值为 第一离解酸基团为3.7以上，B族的5种酸，铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。

    Polishing slurry and polishing method
    50.
    发明申请
    Polishing slurry and polishing method 审中-公开
    抛光浆和抛光方法

    公开(公告)号：US20070295934A1

    公开(公告)日：2007-12-27

    申请号：US11808038

    申请日：2007-06-06

    申请人： Yasushi Kurata ,  Katsuyuki Masuda ,  Hiroshi Ono ,  Yasuo Kamigata ,  Kazuhiro Enomoto

    发明人： Yasushi Kurata ,  Katsuyuki Masuda ,  Hiroshi Ono ,  Yasuo Kamigata ,  Kazuhiro Enomoto

    IPC分类号： C09K13/00

    CPC分类号： B24B37/0056 ,  B24B37/044 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/3212

    摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.

    摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物（A-group），所述酸选自： 其中第一离解酸基团的解离常数Ka（pKa）的对数的负值小于3.7，并且排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，铵盐 的A基团和A基团的酯，以及一种或多种选自一种或多种酸（B族）的化合物，所述酸选自其中解离常数Ka（pKa）的对数的负值为 第一离解酸基团为3.7以上，B族的5种酸，铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。