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    Transistor including physical property-changing layer, method of operating transistor, and method of manufacturing transistor
    41.
    发明申请
    Transistor including physical property-changing layer, method of operating transistor, and method of manufacturing transistor 审中-公开
    包括物理变化层的晶体管，晶体管的操作方法和制造晶体管的方法

    公开(公告)号：US20060197082A1

    公开(公告)日：2006-09-07

    申请号：US11363235

    申请日：2006-02-28

    申请人： Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

    发明人： Choong-rae Cho ,  In-kyeong Yoo ,  Sung-il Cho

    IPC分类号： H01L29/18

    CPC分类号： H01L29/7869 ,  H01L29/78681 ,  H01L49/003

    摘要： A transistor using a physical property-changing layer, a method of operating the transistor, and a method of manufacturing the transistor are provided. The transistor may include an insulation layer formed on a substrate, the first and second conductive layer patterns, the physical property-changing layer, a dielectric layer, for example, a high dielectric layer, and a gate electrode. The first and second conductive layer patterns may be spaced apart from each other on the insulation layer. The physical property-changing layer may be formed on a portion of the insulation layer between the first and second conductive layer patterns. The dielectric layer may be stacked on the physical property-changing layer and the gate electrode may be formed on the high dielectric layer.

    摘要翻译： 提供了使用物理性质改变层的晶体管，晶体管的操作方法和晶体管的制造方法。 晶体管可以包括形成在衬底上的绝缘层，第一和第二导电层图案，物理性质改变层，介电层，例如高电介质层和栅电极。 第一和第二导电层图案可以在绝缘层上彼此间隔开。 物理变化层可以形成在第一和第二导电层图案之间的绝缘层的一部分上。 电介质层可以堆叠在物理变化层上，并且栅电极可以形成在高电介质层上。

    Electron beam lithography apparatus using a patterned emitter and method of fabricating the patterned emitter
    42.
    发明授权
    Electron beam lithography apparatus using a patterned emitter and method of fabricating the patterned emitter 有权
    使用图案化发射体的电子束光刻设备和制造图案化发射器的方法

    公开(公告)号：US07095036B2

    公开(公告)日：2006-08-22

    申请号：US10795979

    申请日：2004-03-10

    申请人： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon

    发明人： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon

    IPC分类号： H01J37/08

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06333

    摘要： An electron beam lithography apparatus for providing one-to-one or x-to-one projection of a pattern includes a pyroelectric emitter, which is disposed a predetermined distance apart from a substrate holder, the pyroelectric emitter including a pyroelectric plate having a dielectric plate on a surface thereof and a patterned semiconductor thin film on the dielectric plate facing the substrate holder, a heating source for heating the pyroelectric emitter, and either a pair of magnets disposed beyond the pyroelectric emitter and the substrate holder, respectively, or a deflection unit disposed between the pyroelectric emitter and the substrate holder, to control paths of electrons emitted by the pyroelectric emitter. In operation, when the pyroelectric emitter is heated in a vacuum, electrons are emitted from portions of the pyroelectric plate that are not covered by the patterned semiconductor thin film.

    摘要翻译： 一种用于提供图案的一对一或一对一投影的电子束光刻设备包括一个与衬底保持架隔开预定距离设置的热电发射器，该热电发射器包括一个具有电介质板的热电板 在其表面上和面对衬底保持器的电介质板上的图案化半导体薄膜，分别用于加热热电发射体的加热源和设置在热电发射器和衬底保持器之外的一对磁体或偏转单元 设置在热电发射器和衬底保持器之间，以控制由热电发射器发射的电子的路径。 在操作中，当热电发射体在真空中被加热时，从热电板的未被图案化半导体薄膜覆盖的部分发射电子。

    Memory device using a transistor and one resistant element for storage
    46.
    发明授权
    Memory device using a transistor and one resistant element for storage 有权
    使用晶体管和一个电阻元件进行存储的存储器件

    公开(公告)号：US06838727B2

    公开(公告)日：2005-01-04

    申请号：US10602736

    申请日：2003-06-25

    申请人： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    发明人： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    IPC分类号： H01L27/10 ,  G11C11/401 ,  G11C11/404 ,  G11C16/04 ,  H01L21/00 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/792 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L49/02

    CPC分类号： H01L27/11206 ,  G11C16/0475 ,  H01L27/112

    摘要： A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.

    摘要翻译： 具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜， 形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电 板接触抵抗材料。 存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

    Optical elements including light sources and waveguides and information storage devices including the same
    47.
    发明授权
    Optical elements including light sources and waveguides and information storage devices including the same 有权
    包括光源和波导的光学元件和包括其的信息存储装置

    公开(公告)号：US08526288B2

    公开(公告)日：2013-09-03

    申请号：US13297713

    申请日：2011-11-16

    申请人： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

    发明人： Sung-chul Lee ,  Seung-hoon Han ,  In-kyeong Yoo

    IPC分类号： G11B7/00

    CPC分类号： G11C13/06 ,  G02B5/008 ,  G02F2203/10

    摘要： An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.

    摘要翻译： 光学元件和包括该元件的信息存储装置。 光学元件可以包括用于将圆偏振光转换成等离子体并传输等离子体的光波导结构。 光波导结构可以发射圆偏振等离子体场。 光学元件可以用在信息存储装置中。 例如，信息存储装置可以包括用于在记录介质上记录信息的记录介质和记录元件，并且记录元件可以包括光学元件。 信息可以通过使用由光学元件产生的圆偏振等离子体场来记录在记录介质上。

    Non-volatile memory device and method of manufacturing the same
    48.
    发明授权
    Non-volatile memory device and method of manufacturing the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US08357992B2

    公开(公告)日：2013-01-22

    申请号：US12659516

    申请日：2010-03-11

    申请人： Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

    发明人： Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

    IPC分类号： H01L23/52 ,  H01L29/00

    CPC分类号： H01L27/222 ,  G11C13/0002 ,  G11C2213/71 ,  G11C2213/73 ,  G11C2213/79 ,  H01L27/24

    摘要： The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.

    摘要翻译： 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。