公开(公告)号：US08397668B2

公开(公告)日：2013-03-19

申请号：US12398226

申请日：2009-03-05

申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Tadamitsu Kanekiyo

发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Tadamitsu Kanekiyo

IPC分类号： C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32449 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/3065 ,  Y10T137/0402

摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

公开(公告)号：US20120211163A1

公开(公告)日：2012-08-23

申请号：US13457082

申请日：2012-04-26

申请人： Hiroyuki KOBAYASHI ,  Masaru Izawa

发明人： Hiroyuki KOBAYASHI ,  Masaru Izawa

IPC分类号： C23F1/08

CPC分类号： H01J37/32642 ,  H01J37/32623 ,  H01J2237/335 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68785 ,  Y10S156/915

摘要： A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.

摘要翻译： 灰化处理装置的台的安装单元的直径小于蚀刻处理装置的台的安装单元的直径，并且蚀刻处理装置的台的安装单元的直径小于 客观物品的直径。

公开(公告)号：US08142567B2

公开(公告)日：2012-03-27

申请号：US12392127

申请日：2009-02-25

申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa ,  Makoto Nawata

发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa ,  Makoto Nawata

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4412

摘要： A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilted in a direction opposite the direction of the rotary blade of the turbo-molecular pump on the outer circumference of the member.

摘要翻译： 真空处理装置包括具有形成在排气系统的压力调节阀和涡轮分子泵之间的中心的气体通道的构件和具有多个静止叶片的颗粒分散防止单元，所述多个固定叶片形成为沿相反方向倾斜 涡轮分子泵的旋转叶片在构件的外周上的方向。

公开(公告)号：US20110132541A1

公开(公告)日：2011-06-09

申请号：US12696552

申请日：2010-01-29

申请人： Takumi TANDOU ,  Masaru Izawa

发明人： Takumi TANDOU ,  Masaru Izawa

IPC分类号： H01L21/465

CPC分类号： H01L21/67109 ,  H01L21/67017

摘要： A wafer stage includes a first evaporator where a refrigerant circulates. The first evaporator makes up a cooling cycle with a compressor, first condenser, expansion valve, second evaporator, refrigerant thermometer, and refrigerant flowmeter. The first condenser is supplied with a heat exchange medium. The temperature of a coolant supplied to the second evaporator is measured by an inlet refrigerant thermometer and outlet refrigerant thermometer, while the flow rate of the coolant is monitored and adjusted by a flow-rate adjuster. The temperature difference in the coolant between being at the inlet and at the outlet and flow rate can be measured. Upon complete evaporation of the refrigerant in the second evaporator, the dryness of the refrigerant discharged from the wafer stage is calculated from the amount of heat absorbed from (exchanged with) the coolant, the circulation amount of the refrigerant and the refrigerant temperature to control the rotational speed of the compressor.

摘要翻译： 晶片台包括制冷剂循环的第一蒸发器。 第一蒸发器与压缩机，第一冷凝器，膨胀阀，第二蒸发器，制冷剂温度计和制冷剂流量计构成冷却循环。 第一冷凝器配有热交换介质。 通过入口制冷剂温度计和出口制冷剂温度计测量供应到第二蒸发器的冷却剂的温度，同时通过流速调节器监测和调节冷却剂的流量。 可以测量在入口和出口处的冷却剂的温度差和流量。 在第二蒸发器中制冷剂完全蒸发时，从冷却剂的吸收热量，制冷剂的循环量和制冷剂的温度来计算从晶片台排出的制冷剂的干度，以控制 压缩机的转速。

公开(公告)号：US20100326094A1

公开(公告)日：2010-12-30

申请号：US12538986

申请日：2009-08-11

申请人： Takumi TANDOU ,  Masaru Izawa

发明人： Takumi TANDOU ,  Masaru Izawa

IPC分类号： F25B45/00 ,  H01L21/3065 ,  F25B19/00

CPC分类号： H01J37/32091 ,  F25B45/00 ,  F25B2500/06 ,  H01J2237/2001

摘要： In a plasma processing apparatus, a check valve is installed close to a refrigerant inlet of a compressor. When performing maintenance of a sample stage, refrigerant collected from a refrigerant flow path is temporarily stored in a flow path section extending from an expansion valve to the check valve, making it possible to perform the maintenance without changing the amount of refrigerant in the refrigerating cycle. With a refrigerant storage tank, a refrigerant supply valve, and a refrigerant discharge valve included in the refrigerating cycle, when maintenance of the compressor, a condenser, or the expansion valve is performed, the refrigerant collected from the refrigerating cycle can be put in use again.

摘要翻译： 在等离子体处理装置中，止回阀安装在压缩机的制冷剂入口附近。 在对样品台进行维护时，从制冷剂流路收集的制冷剂暂时存储在从膨胀阀向止回阀延伸的流路部中，能够不改变制冷循环中的制冷剂量而进行维护 。 在冷冻循环中包括的制冷剂储存箱，制冷剂供给阀和制冷剂排出阀中，当执行压缩机，冷凝器或膨胀阀的维护时，可以使用从制冷循环中收集的制冷剂 再次。

公开(公告)号：US07767054B2

公开(公告)日：2010-08-03

申请号：US11213737

申请日：2005-08-30

申请人： Hiroyuki Kobayashi ,  Masaru Izawa ,  Kenetsu Yokogawa ,  Tomoyuki Tamura ,  Kenji Maeda

发明人： Hiroyuki Kobayashi ,  Masaru Izawa ,  Kenetsu Yokogawa ,  Tomoyuki Tamura ,  Kenji Maeda

IPC分类号： C23F1/00

CPC分类号： H01J37/32642 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32532 ,  H01L21/02087 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/68707 ,  H01L21/68742

摘要： A plasma processing apparatus includes a vacuum processing chamber, supplying means for introducing a processing gas into the vacuum processing chamber, a mounting electrode in the vacuum processing chamber for mounting a specimen on the mounting electrode, and a pusher pin for raising the specimen placed on the mounting electrode and holding the specimen over the mounting electrode, wherein the mounting electrode includes an inner area for mounting the specimen, an outer area for mounting a focus ring, and a high-frequency power source for supplying electric power to the inner area and the outer area, and wherein high-frequency electric power is applied to the outer area to generate plasma at the outer edge of the backside of the specimen while the specimen is raised with the pusher pin.

摘要翻译： 等离子体处理装置包括真空处理室，将处理气体导入真空处理室的供给单元，将真空室内的试样安装在真空处理室内的安装电极，以及将试样放置在 所述安装电极将所述试样保持在所述安装电极上，其中所述安装电极包括用于安装所述试样的内部区域，用于安装聚焦环的外部区域和用于向所述内部区域供电的高频电源， 外部区域，并且其中高频电力施加到外部区域，以在样本被推动销升高的同时在试样的背面的外边缘处产生等离子体。

公开(公告)号：US07723235B2

公开(公告)日：2010-05-25

申请号：US11571853

申请日：2005-06-10

申请人： Masaru Kurihara ,  Masaru Izawa

发明人： Masaru Kurihara ,  Masaru Izawa

IPC分类号： H01L21/311 ,  H01L21/3065

CPC分类号： H01L21/28035 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76885 ,  H01L29/6659 ,  H01L29/7833

摘要： After a polycrystalline silicon film (5) is formed on a semiconductor substrate via an insulating film for a gate insulating film (step S1), an organic antireflection film (21) is formed on the polycrystalline silicon film (5) (step S2), and a resist pattern (22) is formed on the antireflection film (21) (step S3). Then, a passivation film (23) is deposited on the antireflection film (21) so as to cover the resist pattern (22) by plasma using fluorocarbon gas while a bias voltage is being applied to the semiconductor substrate (step S4). Then, the passivation film (23) and the antireflection film (21) are etched by plasma using gas containing oxygen gas (step S5). Thereafter, the polycrystalline silicon film (5) is etched using the resist pattern (22) with reduced line edge roughness as an etching mask to form a gate electrode (step S6).

摘要翻译： 在通过栅极绝缘膜用绝缘膜在半导体基板上形成多晶硅膜（5）（步骤S1）之后，在多晶硅膜（5）上形成有机防反射膜（21）（步骤S2） 并且在防反射膜（21）上形成抗蚀剂图案（22）（步骤S3）。 然后，在防反射膜（21）上沉积钝化膜（23），以便在对半导体衬底施加偏置电压的同时使用碳氟化合物气体通过等离子体覆盖抗蚀剂图案（步骤S4）。 然后，使用含氧气体的等离子体蚀刻钝化膜（23）和防反射膜（21）（步骤S5）。 此后，使用具有减小的线边缘粗糙度的抗蚀剂图案（22）蚀刻多晶硅膜（5）作为蚀刻掩模以形成栅电极（步骤S6）。

公开(公告)号：US20090301392A1

公开(公告)日：2009-12-10

申请号：US12191373

申请日：2008-08-14

申请人： Hiroyuki Kobayashi ,  Masaru Izawa ,  Kenetsu Yokogawa ,  Kenji Maeda

发明人： Hiroyuki Kobayashi ,  Masaru Izawa ,  Kenetsu Yokogawa ,  Kenji Maeda

IPC分类号： C23C14/00

CPC分类号： C23C16/4401 ,  H01L21/67201 ,  H01L21/67745

摘要： There is a vacuum processing apparatus which can reduce the amount of foreign particle occurrence by enhancing the ease of maintenance of a gas diffuser installing portion in the vacuum processing apparatus. A gas diffuser chamber for accommodating a gas diffuser is installed in the vacuum processing apparatus.

摘要翻译： 通过增加真空处理装置中的气体扩散器安装部的维护的便利，可以减少异物发生量的真空处理装置。 用于容纳气体扩散器的气体扩散室安装在真空处理装置中。

公开(公告)号：US20090294060A1

公开(公告)日：2009-12-03

申请号：US12539140

申请日：2009-08-11

申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC分类号： H01L21/465

CPC分类号： C23C16/4401 ,  H01J37/32091 ,  H01J37/32678 ,  H01J2237/022

摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.

摘要翻译： 半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。 加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为 处理。 温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。

公开(公告)号：US20090060702A1

公开(公告)日：2009-03-05

申请号：US12035780

申请日：2008-02-22

申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa

发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa

IPC分类号： H01L21/673

CPC分类号： H01L21/67748 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67196

摘要： In a semiconductor manufacturing apparatus including a processing chamber, means for supplying gas to the processing chamber, evacuating means for decompressing the processing chamber, a transport chamber, means for supplying gas to the transport chamber, and evacuating means for decompressing the transport chamber, the pressure in the processing chamber is 10 to 50 Pa, the pressure in the transport chamber is set to positive pressure to the processing chamber, the differential pressure between the processing chamber and the transport chamber is 10 Pa or less, and the flow rate of the gas supplied to the processing chamber is twice or more the flow rate of gas supplied to the transport chamber.

摘要翻译： 在包括处理室的半导体制造装置中，向处理室供给气体的装置，用于对处理室进行减压的排气装置，输送室，向输送室供给气体的装置，以及用于使输送室减压的排气装置， 处理室中的压力为10〜50Pa，输送室内的压力被设定为处理室的正压，处理室与输送室之间的压差为10Pa以下，流量为 供给到处理室的气体是供给至运送室的气体的流量的两倍以上。