摘要:
Microelectronic packages formed by using novel fluxing agents are disclosed. In one aspect, a microelectronic package may include a microelectronic device, a substrate, and an interconnect structure including a solder material coupling the microelectronic device with the substrate. Underfill material may be included around the interconnect structure between the microelectronic device and the substrate. The underfill material may include an organic rosin acid moiety derived from an anhydride adduct of a rosin compound that was used as a fluxing agent. Methods of making such microelectronic packages using anhydride adducts of rosin compounds are also disclosed.
摘要:
An electronic structure includes an electronic device coupled to a substrate by conductive bumps and ball limiting metallurgy (BLM). Underfill material having filler particles is disposed in a space between the electronic device and the substrate. A weight percentage of the filler particles is at least about 60%. A particle size of at least 90 wt % of the filler particles is less than about 2 μm and/or the filler particles are coated by an organic coupling agent. Once the underfill material is fully cured, its coefficient of thermal expansion is no more than 30 PPM/° C., and its glass transition temperature is at least 100° C., and its adhesion to a passivation layer of the electronic device, to the substrate and to the electronic device at its edges is such that the electronic structure passes standardized reliability tests without delamination of the ball limiting metallurgy.
摘要:
Microelectronic and optoelectronic packaging embodiments are described with underfill materials including polybenzoxazine, having the general formula:
摘要:
A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.
摘要:
Embodiments include electronic assemblies and methods for forming electronic assemblies. Certain methods include forming a thermoelectric cooling (TEC) structure on a die, the TEC structure including a plurality of spaced apart TEC legs. A polymer is positioned between the spaced apart TEC legs of the TEC structure. The TEC structure may be positioned between the die and the heat spreader. In one method, a polymer in solid form is positioned on the TEC legs. The polymer in solid form is heated to a temperature sufficient so that a liquid polymer is formed, and the liquid polymer flows between the TEC legs. After being positioned between the TEC legs, the liquid polymer is solidified. Other embodiments are described and claimed.
摘要:
The present invention relates to a semiconductor package containing a package substrate, integrated heat spreader, and semiconductor die. An underfill material is embedded in the semiconductor package serving both as underfill and sealant.
摘要:
An underfill material, such as a no flow underfill material, containing an anhydride adduct of a rosin compound is disclosed. In one aspect, the anhydride adduct of a rosin compound contains an organic rosin acid moiety and a substitute moiety for a hydroxyl group of a carboxylic acid attached at an acyl group of the organic rosin acid moiety. In another aspect, the anhydride adduct of the rosin compound contains a plurality of linked organic rosin acid moieties. Methods of using the underfill materials and packages formed by curing the underfill materials are also disclosed.
摘要:
Amine-based no-flow underfill materials and a method to produce flip-chip devices electrically bonded to a substrate are described. The no-flow underfill material includes an amine-based curing agent and a fluxing agent, which activates at a fluxing temperature and is neutral at the temperatures lower than the fluxing temperature. The fluxing agent of the no-flow underfill material heated to the activation temperature generates a reactive acid in-situ during chip attachment process to facilitate joint formation. The no-flow underfill material is formed on the substrate. A chip is placed on the no-flow underfill material formed on the substrate. A temperature is increased to activate the fluxing agent. The temperature is further increased to form conductive joints between the chip and the substrate. Further, the no-flow underfill material is cured. The conductive joints between the chip and the substrate may be lead-free.
摘要:
An embodiment of the present invention is a technique to utilize water soluble polymer-containing flux to provide protection to low-k ILD of flip chip devices during flip chip assembly. A flux which includes at least a solvent, a water soluble monomer or polymer is applied on a substrate. A die is placed on the substrate, the die is reflowed in an oven at a reflow temperature to redistribute stress caused by coefficient thermal expansion (CTE) mismatch between the substrate and the die. The reflow temperature is higher than a melting point of the polymer.
摘要:
The adhesion of low k poly(arylene ether) dielectric coating compositions is effectively enhanced by a polycarbosilane promoter additive or primer. A coating composition is prepared by (a) providing a poly(arylene ether) composition; and (b) adding to said composition a small effective adhesion promoting amount of certain polycarbosilanes. The adhesion enhanced coating compositions are cured by heat treatment at temperatures in excess of 50° C. to form a polycarbosilane-modified poly(arylene ether) polymer composition having a low k dielectric constant for use in semiconductor devices.