摘要:
In a multi-layer substrate module receiving from an external earth node (20) supply of a reference potential (Vss) for grounding, a plurality of ground lines (170-1, 170-2, 170-3) are provided respectively corresponding to a plurality of internal circuits (210, 220, 230). Moreover, a common node (Ncmn) for coupling the ground lines (170-1, 170-2, 170-3) is provided in an insulating layer (105C) of the multi-layer substrate module. The common node (Ncmn) is electrically coupled to the earth node 20 through a ground pin terminal 204 shared by the plurality of internal circuits (210, 220, 230). Preferably, the common node (Ncmn) is provided in the lowest insulating layer of the multi-layer substrate module. Thus, parasitic inductance of the portion through which an earth current flows, that is, the portion common to the plurality of internal circuits (210, 220, 230), can be suppressed with a small number of ground pin terminals. Accordingly, the inflow phenomenon of the earth current between the plurality of internal circuits (210, 220, 230) is prevented, enabling stable operation.
摘要:
The present invention relates to a semiconductor device and, more particularly, has for its object to provide a technique for improving the performance of a semiconductor device having a ground terminal and a plurality of signal terminals arranged around the ground terminal. To attain the object, the present invention features isolation between a ground terminal (5, 35) connected to a functional block (11) and a ground terminal (6, 36) connected to a functional block (12). Thus, a ground potential applied to one of the functional blocks through the corresponding ground terminal is prevented from varying depending on the magnitude of a current flowing through the other functional block. This improves the performance of each functional block to improve the performance of the semiconductor device.
摘要:
In an apparatus for fabricating a carbon coating, an object such as a magnetic r cording medium is disposed on a side of an electrode connected to a high-frequency power supply. Ultrasonic vibrations are supplied to the object. Discharge is generated between the electrode connected to the high-frequency power supply and a grounded electrode to fabricate a carbon coating on the surface of the object. Also, an electrode interval is set to 6 mm or less, pressure between the electrodes is set to 15 Torr to 100 Torr, whereby high-density plasma is generated to form an ion sheath on an anode side. Therefore, a coating is fabricated on the surface of the object by bombardment of ions.
摘要:
A method for fabricating a semiconductor device including a semiconductor layer structure, a source electrode and, a drain electrode formed on the semiconductor layer structure, and a source interconnection connected to the source electrode is provided. The method includes the steps of: (a) forming the semiconductor layer structure on a substrate; (b) forming a metal layer structure so as to cover the semiconductor layer structure; (c) forming a resist layer having a predetermined pattern on the metal layer structure: (d) performing a first etching process for the metal layer structure using the resist layer as a mask so as to form the source electrode, the drain electrode and the source interconnection; and (e) performing a second etching process for the semiconductor layer structure using the resist layer as a mask so as to form a transistor gap portion between the source electrode and the drain electrode. The respective first and second etching processes in the steps (d) and (e) are performed using the same resist layer as the mask in the same chamber.
摘要:
An abrasive vitreous bonded solid mass having a vitrified abrasive structure comprising abrasive grains which are held together by an inorganic bonding agent, the abrasive structure is impregnated with a composition which comprises a thermosetting synthetic resin and a surfactant. The abrasive solid mass is manufactured by preparing the composition including the resin and the surfactant, impregnating the vitrified abrasive structure with the composition, and curing the composition.
摘要:
An exhaust manifold assembly including at least two manifold part members, an annular end projection of one manifold part member receiving an annular end projection of the other manifold part member to form a connection portion, further including (a) an annular slidable tubular member made of a metal material having good heat resistance and oxidation resistance and inserted into a gap between the annular end projections of both manifold part members; and (b) a flexible pipe having a corrugated pipe portion and tubular portions integrally extending from both ends of the corrugated pipe portion, the tubular portions of the flexible pipe being continuously welded to outer surfaces of the manifold part members, whereby the connection portion is completely sealed by the flexible pipe.
摘要:
When defective pixels of a solid state image pickup device of a video camera are corrected by signal processes, a white spot noise is detected by closing an iris and by comparing the signal level and a level of only a dark current. Further, in this case, a gain of an AGC circuit for controlling a gain of a video signal is raised and a precise detection is executed. By executing such a detecting operation at the time of turn-on or turn-off of a power source, the user is not annoying. In the ordinary photographing, a reference level in detection of a white spot noise is set to an optimum value in accordance with a temperature of the solid state image pickup device or its peripheral temperature or the gain of the AGC circuit so that the white spot noise detection is not influenced by the temperature of the solid state image pickup device or the operating state of the AGC circuit.
摘要:
A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
摘要:
A data imprinting device of the type in which data are imprinted on the film surface during the time when the film is transported. The device includes a data exposure device positioned on the presser plate which presses the film against the film gate of the camera in fixedly secured relation at a location corresponding to the vicinity of the path of movement of the film and a prohibitor responsive to accidental interruption of the film transportation for prohibiting further imprinting of data until the next frame, which came across the data exposure making device at the time of the accidental interruption, is brought into alignment with the data exposure making means as the film transportaion has been re-started.
摘要:
A substrate having a film to be etched is coated with a carbon film. The carbon film is then coated with an organic mask. The mask is then patterned to expose portions of the carbon film. Plasma etching is then utilized to remove portions of the carbon film not covered by the mask, followed by wet etching to form a predetermined pattern in the film on the substrate.