Abstract:
A lead frame of high quality which can endure direct bonding to a light emitting element, and a light emitting device of high reliability which utilizing the lead frame. A lead frame includes a clad material which is a stacked layer of at least a first metal layer and a second metal layer, the second metal layer made of a metal which is different from the metal of the first metal layer, and a through portion. In the through-portion, an end surface of the first metal layer and an end surface of the second metal layer are covered with a plated layer. The end surface of either the first metal layer or the second metal layer protrudes farther into the through-portion than the end surface of the other metal layer.
Abstract:
A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate.
Abstract:
A light emitting device includes a semiconductor light emitting element; and a light reflective member having a multilayer structure and covering the side faces of the semiconductor light emitting element. The light reflective member includes: a first layer disposed on an inner, semiconductor light emitting element side, the first layer comprising a light-transmissive resin containing a light reflective substance, and a second layer disposed in contact with an outer side of the first layer, the second layer comprising a light-transmissive resin containing the light reflective substance at a lower content than that of the first layer.
Abstract:
A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate.
Abstract:
A light emitting device including a light emitting element including an element substrate and semiconductor layers formed thereon, an encapsulating member that covers the sides of the light emitting element and forms a cavity at the upper surface of the light emitting element, and a wavelength-conversion layer in the cavity. The wavelength-conversion layer being capable of converting that converts the wavelength of light emitted by the light emitting element. The wavelength-conversion layer includes a first wavelength-conversion sub layer which is disposed at the upper surface of the light emitting element, and a second wavelength-conversion sub layer which is disposed on the first wavelength-conversion sub layer. The first wavelength-conversion sub layer includes first phosphors having a first resistance to environmental exposure, and the second wavelength-conversion sub layer includes second phosphors having a second resistance which is higher than that of the first wavelength-conversion sub layer.
Abstract:
A method of manufacturing a light emitting device including: forming a supporting body on a mounting surface of each of semiconductor light emitting elements; arranging the semiconductor light emitting elements to be spaced apart from each other by a predetermined distance; and forming a wavelength conversion layer to continuously cover an upper surface and side surfaces of at least one of the semiconductor light emitting elements. The forming the wavelength conversion layer includes spraying a slurry provided by mixing particles of a wavelength conversion member and a thermosetting resin in a solvent onto the upper surface and the side surfaces of the semiconductor light emitting element, so that a thickness of the wavelength conversion layer at a lower portion of the side surfaces of the supporting body is smaller than the thickness on the upper surface and the side surfaces of the semiconductor light emitting element.
Abstract:
A light emitting device is provided. The light emitting device includes a light emitting element, a wavelength converting member, a light transmissive member, an adhesive member, and a light reflective member. The wavelength converting member has an upper surface and lateral surfaces, contains a fluorescent substance, and is placed on the light emitting element. The light transmissive member covers the upper surface of the wavelength converting member. The adhesive member is interposed between the light emitting element and the wavelength converting member, and covers the lateral surfaces of the wavelength converting member. The light reflective member covers the lateral surfaces of the wavelength converting member via the adhesive member.
Abstract:
A light-emitting device includes a base, a light-emitting element, a wavelength conversion member, and a light reflecting member. The base has a base upper surface. The light-emitting element is provided on the base and includes a semiconductor layer, a light transmissive substrate, and a recess. The semiconductor layer is provided on the base so that a semiconductor lower surface faces the base upper surface of the base. The light transmissive substrate has a substrate upper surface, a substrate lower surface opposite to the substrate upper surface, and a substrate side surface between the substrate upper surface and the substrate lower surface. The light transmissive substrate is provided on the semiconductor layer so that the substrate lower surface contacts a semiconductor upper surface of the semiconductor layer. The recess is provided on the substrate upper surface of the light transmissive substrate. The wavelength conversion member is provided in the recess.
Abstract:
A light emitting device includes a semiconductor light emitting element; and a light reflective member having a multilayer structure and covering the side faces of the semiconductor light emitting element. The light reflective member includes: a first layer disposed on an inner, semiconductor light emitting element side, the first layer comprising a light-transmissive resin containing a light reflective substance, and a second layer disposed in contact with an outer side of the first layer, the second layer comprising a light-transmissive resin containing the light reflective substance at a lower content than that of the first layer.
Abstract:
A light emitting device has a base body equipped with a base material and a pair of connection terminals disposed from a first main face to a second main face that is on the opposite side from the first main face; a light emitting element connected to the connection terminals on the first main face; and a light reflecting member that covers the side faces of the light emitting element, the base material having a protruding component on the second main face, and the connection terminals being disposed on the first main face from the second main face on both sides of the protruding component, and being partly exposed from the light reflecting member on both sides of the first main face.