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    Field-effect transistor with local source/drain insulation and associated method of production
    43.
    发明授权
    Field-effect transistor with local source/drain insulation and associated method of production 有权
    具有局部源/漏绝缘和相关生产方法的场效应晶体管

    公开(公告)号：US07824993B2

    公开(公告)日：2010-11-02

    申请号：US12431214

    申请日：2009-04-28

    申请人： Juergen Holz ,  Klaus Schruefer ,  Helmut Tews

    发明人： Juergen Holz ,  Klaus Schruefer ,  Helmut Tews

    IPC分类号： H01L21/336

    CPC分类号： H01L29/66636 ,  H01L21/283 ,  H01L21/30604 ,  H01L21/31 ,  H01L21/3205 ,  H01L29/0653 ,  H01L29/41783

    摘要： A method for fabricating a field-effect transistor with local source/drain insulation. The method includes forming and patterning a gate stack with a gate layer and a gate dielectric on a semiconductor substrate; forming source and drain depressions at the gate stack in the semiconductor substrate; forming a depression insulation layer at least in a bottom region of the source and drain depressions; and filling the at least partially insulated source and drain depressions with a filling layer for realizing source and drain regions. Further, the step of forming source and drain depressions at the gate stack in the semiconductor substrate includes that first depressions are formed for realizing channel connection regions in the semiconductor substrate, spacers are formed at the gate stack, and second depressions are formed using the spacers as a mask in the first depressions and in the semiconductor substrate.

    摘要翻译： 一种制造具有局部源极/漏极绝缘的场效应晶体管的方法。 该方法包括在半导体衬底上形成和图案化具有栅极层和栅极电介质的栅叠层; 在半导体衬底中的栅极堆叠处形成源极和漏极凹陷; 至少在所述源极和漏极凹陷的底部区域中形成凹陷绝缘层; 以及用用于实现源极和漏极区域的填充层填充所述至少部分绝缘的源极和漏极凹部。 此外，在半导体衬底中的栅极堆叠处形成源极和漏极凹陷的步骤包括形成用于实现半导体衬底中的沟道连接区域的第一凹陷，在栅极堆叠处形成间隔物，并且使用间隔件形成第二凹陷 作为第一凹部和半导体衬底中的掩模。

    Field effect transistor
    45.
    发明授权
    Field effect transistor 有权
    场效应晶体管

    公开(公告)号：US07767518B2

    公开(公告)日：2010-08-03

    申请号：US12266876

    申请日：2008-11-07

    申请人： Helmut Tews

    发明人： Helmut Tews

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/10841 ,  H01L27/1082 ,  H01L27/10823 ,  H01L27/10832 ,  H01L27/10858 ,  H01L27/10864 ,  H01L27/10876 ,  H01L29/161 ,  H01L29/4916 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/7827 ,  Y10T29/41

    摘要： A field effect transistor is provided. The field effect transistor includes a channel region, electrically conductive channel connection regions, and a control region. The electrically conductive channel connection regions adjoin the channel region along with a transistor dielectric. The control region is separated from the channel region by the transistor dielectric. In addition, the control region may comprise a monocrystalline material.

    摘要翻译： 提供场效应晶体管。 场效应晶体管包括沟道区，导电沟道连接区和控制区。 导电沟道连接区域与晶体管电介质连接在沟道区域上。 控制区域通过晶体管电介质与沟道区域分离。 此外，控制区域可以包括单晶材料。

    Hard mask arrangement
    49.
    发明申请
    Hard mask arrangement 审中-公开
    硬面罩布置

    公开(公告)号：US20060234138A1

    公开(公告)日：2006-10-19

    申请号：US11393017

    申请日：2006-03-30

    申请人： Rodger Fehlhaber ,  Helmut Tews

    发明人： Rodger Fehlhaber ,  Helmut Tews

    IPC分类号： G03F1/00 ,  H01L21/311

    CPC分类号： H01L21/0337 ,  H01L21/0338

    摘要： An interconnect connection structure having first and second interconnects and multiple connection elements that electrically connect the first interconnect to the second interconnect is described. The multiple connection elements are formed laterally in a lateral region of the first and second interconnects relative to an overlay orientation of the interconnects. A central region may be free of connection elements so that electro-migration properties of the connection structure are improved and the current-carrying capacity is increased.

    摘要翻译： 描述了具有第一和第二互连的互连连接结构以及将第一互连电连接到第二互连的多个连接元件。 多个连接元件相对于互连件的覆盖取向横向地形成在第一和第二互连件的横向区域中。 中心区域可以没有连接元件，使得连接结构的电迁移特性得到改善并且载流能力增加。