摘要:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line selection package for selecting the strongest F2 spectral line.
摘要翻译:一种注射种子模块化气体放电激光系统,其能够以约4,000Hz或更大的脉冲速率和约5mJ或更大的脉冲能量产生高质量的脉冲激光束。 提供两个单独的放电室,其中之一是主振荡器的一部分,其产生在第二放电室中放大的非常窄的带状晶体束。 可以单独控制室,允许主振荡器中的波长参数的单独优化和放大室中的脉冲能量参数的优化。 配置为MOPA并被专门设计用作集成电路光刻的光源的F 2 N 2激光系统中的优选实施例。 在优选的MOPA实施例中,每个腔室包括单个切向风扇,其通过在比脉冲之间的大约0.25毫秒更短的时间内清除来自放电区域的碎屑来提供足够的气流以允许以4000Hz或更高的脉冲速率操作。 主振荡器配备有用于选择最强的F 2/2谱线的线选择包。
摘要:
A high resolution spectral measurement device. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow-band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034 pm (FWHM) and about 0.091 pm (95 percent integral). The bandwidth of a laser beam can be measured very accurately by a directing portion of the laser beam into the insulator and scanning the laser wavelength over a range which includes the monochromator slit wavelength. In a second embodiment the second slit and the light detector is replaced by a photodiod array and the bandwidth of a laser beam is determined by analyzing a set of scan data from the photodiode array. Alternately, the laser wavelength can be fixed near the middle of the spectrum range of the grating spectrometer, and the etalon can be scanned.
摘要:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.
摘要:
A high energy photon source. A pair of plasma pinch electrodes are located in a vacuum chamber. The chamber contains a working gas which includes a noble buffer gas and an active gas chosen to provide a desired spectral line. A pulse power source provides electrical pulses at repetition rates of 1000 Hz or greater and at voltages high enough to create electrical discharges between the electrodes to produce very high temperature, high density plasma pinches in the working gas providing radiation at the spectral line of the source or active gas. A fourth generation unit is described which produces 20 mJ, 13.5 nm pulses into 2 &pgr; steradians at repetition rates of 2000 Hz with xenon as the active gas. This unit includes a pulse power system having a resonant charger charging a charging capacitor bank, and a magnetic compression circuit comprising a pulse transformer for generating the high voltage electrical pulses at repetition rates of 2000 Hz or greater.
摘要:
An electric discharge laser with fast wavelength correction. Fast wavelength correction equipment includes at least one piezoelectric drive and a fast wavelength measurement system and fast feedback response times. In a preferred embodiment, equipment is provided to control wavelength on a slow time frame of several milliseconds, on a intermediate time from of about one to three millisecond and on a very fast time frame of a few microseconds. Techniques include a combination of a relatively slow stepper motor and a very fast piezoelectric driver for tuning the laser wavelength using a tuning mirror. A preferred control technique is described (utilizing a very fast wavelength monitor) to provide the slow and intermediate wavelength control and a piezoelectric load cell in combination with the piezoelectric driver to provide the very fast (few microseconds) wavelength control.
摘要:
An extreme-ultraviolet (EUV) light source comprising an optic, a target material, and a laser beam passing through said optic along a beam path to irradiate said target material. The EUV light source further includes a system generating a gas flow directed toward said target material along said beam path, said system having a tapering member surrounding a volume and a plurality of gas lines, each gas line outputting a gas stream into said volume.
摘要:
A filter is used in a target material supply apparatus and includes a sheet having a first flat surface and a second opposing flat surface, and a plurality of through holes. The first flat surface is in fluid communication with a reservoir that holds a target mixture that includes a target material and non-target particles. The through holes extend from the second flat surface and are fluidly coupled at the second flat surface to an orifice of a nozzle. The sheet has a surface area that is exposed to the target mixture, the exposed surface area being at least a factor of one hundred less than an exposed surface area of a sintered filter having an equivalent transverse extent to that of the sheet.
摘要:
An extreme ultraviolet light system includes a drive laser system that produces an amplified light beam; a target material delivery system configured to produce a target material at a target location; a beam delivery system configured to receive the amplified light beam emitted from the drive laser system and to direct the amplified light beam toward the target location; and a metrology system. The beam delivery system includes converging lens configured and arranged to focus the amplified light beam at the target location. The metrology system includes a light collection system configured to collect a portion of the amplified light beam reflected from the converging lens and a portion of a guide laser beam reflected from the converging lens. The light collection system includes a dichroic optical device configured to optically separate the portions.
摘要:
A system and method for an extreme ultraviolet light chamber comprising a collector mirror, a cooling system coupled to a backside of the collector mirror operative to cool a reflective surface of the collector mirror and a buffer gas source coupled to the extreme ultraviolet light chamber.
摘要:
An apparatus for generating EUV radiation is disclosed which may include a target material, a system generating a laser beam for interaction with the target material and a pair of electrodes. A pulse power electrical circuit may be provided for generating a discharge between said electrodes to produce EUV radiation from said target material.