摘要:
An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.
摘要:
The present invention provides an excimer laser capable of producing a high quality pulsed laser beam at pulse rates of about 4,000 Hz at pulse energies of about 5 mJ or greater. A preferred embodiment is an ArF excimer laser specifically designed as a light source for integrated circuit lithography. An improved wavemeter with special software monitors output beam parameters and controls a very fast PZT driven tuning mirror and the pulse power charging voltage to maintain wavelength and pulse energy within desired limits. In a preferred embodiment two fan motors drive a single tangential fan which provides sufficient gas flow to clear discharge debris from the discharge region during the approximately 0.25 milliseconds between pulses.
摘要:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.
摘要:
Electric discharge laser with active chirp correction. This application discloses techniques for moderating and dispensing these pressure waves. In some lasers small predictable patterns remain which can be substantially corrected with active wavelength control using relatively slow wavelength control instruments of the prior art. In a preferred embodiment a simple learning algorithm is described to allow advance tuning mirror adjustment in anticipation of the learned chirp pattern. Embodiments include stepper motors having very fine adjustments so that size of tuning steps are substantially reduced for more precise tuning. However, complete elimination of wavelength chirp is normally not feasible with structural changes in the laser chamber and advance tuning; therefore, Applicants have developed equipment and techniques for very fast active chirp correction. Improved techniques include a combination of a relatively slow stepper motor and a very fast piezoelectric driver. In another preferred embodiment chirp correction is made on a pulse-to-pulse basis where the wavelength of one pulse is measured and the wavelength of the next pulse is corrected based on the measurement. This correction technique is able to function at repetition rates as rapid as 2000 Hz and greater.
摘要:
A high resolution etalon-grating monochromator. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034 pm (FWHM) and about 0.091 pm (95 percent integral). The bandwidth of a laser beam can be measured very accurately by a directing portion of the laser beam into the monochromator and scanning the laser wavelength over a range which includes the monochromator slit wavelength.
摘要:
A reliable, modular, production quality narrow-band KrF excimer laser capable of producing 10 mJ laser pulses at 1000 Hz with a bandwidth of about 0.6 pm or less. The present invention is especially suited to long-term round-the-clock operation in the lithographic production of integrated circuits. Improvements over prior art lasers include a single upstream preionizer tube and acoustic baffles. A preferred embodiment includes reduced fluorine concentration, an anode support bar shaped to reduce aerodynamic reaction forces on blower bearings, a modified pulse power system providing faster pulse rise time, an output coupler with substantially increased reflectivity, a line narrowing module with CaF prism beam expanders, a more accurate wavemeter, a laser computer controller programmed with new and improved pulse energy control algorithm.
摘要:
A high power narrow band, high repetition rate laser light source optical improvement apparatus and methods are disclosed with a fast angularly positionable mirror having a mirror mounting frame, a reflective optic with a coefficient different from that of the mounting frame, at least one flexure mount fromed in the mounting frame that is flexible having flexure arm attached the flexture to the mounting frame. The apparatus may include a flexure force mechanism having an elongated rod. The force mechanism may pre-stress the flexure. The mirror maybe a grating which includes a substrate with metallic layer formed on the substrate, and a protective coating made of silica formed on the reflective metallic layer. The grating maybe actively tuned using an electro- or magneto-sensitive element. Oxides of the metal in the reflective layer may be removed by a hydrogen purge system exposed to deep ultraviolet radiation.
摘要:
An electric discharge laser with fast wavelength correction. Fast wavelength correction equipment includes at least one piezoelectric drive and a fast wavelength measurement system and fast feedback response times. In a preferred embodiment, equipment is provided to control wavelength on a slow time frame of several milliseconds, on a intermediate time from of about one to five milliseconds and on a very fast time frame of a few microseconds. Preferred techniques include a combination of a relatively slow stepper motor and a very fast piezoelectric driver for tuning the laser wavelength using a tuning mirror. A preferred control technique is described (utilizing a very fast wavelength monitor) to provide the slow and intermediate wavelength control with the combination of a stepper motor and a piezoelectric driver. Very fast wavelength control is provided with a piezoelectric load cell in combination with the piezoelectric driver. Preferred embodiments provide (1) fast feedback control based on wavelength measurements, (2) fast vibration control, (3) active damping using the load cell and an active damping module, (4) transient inversion using feed forward algorithms based on historical burst data. A preferred embodiment adapts the feed forward algorithms to current conditions. Another preferred embodiment measures tuning mirror position to permit wavelength pretuning and active wavelength tuning.
摘要:
The present invention provides a control system for a modular high repetition rate two discharge chamber ultraviolet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber.Novel control features specially adapted for a two-chamber gas discharge laser system include: (1) pulse energy controls, with nanosecond timing precision (2) precision pulse to pulse wavelength controls with high speed and extreme speed wavelength tuning (3) fast response gas temperature control and (4) F2 injection controls with novel learning algorithm.
摘要:
The present invention provides a control system for a modular high repetition rate two discharge chamber ultraviolet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. Feedback timing control techniques are provided for controlling the relative timing of the discharges in the two chambers with an accuracy in the range of about 2 to 5 billionths of a second even in burst mode operation. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality.