公开(公告)号：US09905596B2

公开(公告)日：2018-02-27

申请号：US14275531

申请日：2014-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: H01L27/146 ,  H04N5/3745 ,  H01L27/12

CPC classification number: H01L27/14616 ,  H01L27/1203 ,  H01L27/1225 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H04N5/37457

Abstract: A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1×10−13 A or less is used as a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.

公开(公告)号：US09887299B2

公开(公告)日：2018-02-06

申请号：US15279513

申请日：2016-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Katayama ,  Kenichi Okazaki ,  Jun Koyama

IPC: H03B1/00 ,  H03K3/00 ,  H01L29/786 ,  H01L29/26 ,  H03K19/096 ,  H03K3/356 ,  H03K3/037 ,  H03K5/15 ,  H03K19/0944 ,  H01L27/12 ,  G11C19/28 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/7869 ,  G11C19/28 ,  H01L27/1225 ,  H01L29/26 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/78696 ,  H03K3/037 ,  H03K3/356121 ,  H03K5/15093 ,  H03K19/09443 ,  H03K19/096

Abstract: A transistor with excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a first gate electrode, a second gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer is between the first gate electrode and the second gate electrode. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode and includes a region surrounded by the first gate electrode and the second gate electrode without the source electrode and the drain electrode interposed therebetween.

公开(公告)号：US09887241B2

公开(公告)日：2018-02-06

申请号：US14571404

申请日：2014-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L51/50 ,  H01L51/52 ,  H01L27/28 ,  G09G3/3233 ,  H01L27/32 ,  H01L27/15 ,  H01L29/786 ,  H01L51/05 ,  G09G3/20

CPC classification number: H01L27/283 ,  G09G3/2022 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0465 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/0286 ,  G09G2320/0223 ,  G09G2320/043 ,  H01L27/156 ,  H01L27/3276 ,  H01L29/78669 ,  H01L29/78696 ,  H01L51/0545 ,  H01L51/0562 ,  H01L51/5203

Abstract: A display device in which variations in luminance due to variations in characteristics of transistors are reduced, and image quality degradation due to variations in resistance values is prevented. The invention comprises a transistor whose channel portion is formed of an amorphous semiconductor or an organic semiconductor, a connecting wiring connected to a source electrode or a drain electrode of the transistor, a light emitting element having a laminated structure which includes a pixel electrode, an electro luminescent layer, and a counter electrode, an insulating layer surrounding an end portion of the pixel electrode, and an auxiliary wiring formed in the same layer as a gate electrode of the transistor, a connecting wiring, or the pixel electrode. Further, the connecting wiring is connected to the pixel electrode, and the auxiliary wiring is connected to the counter electrode via an opening portion provided in the insulating layer.

公开(公告)号：US20180026142A1

公开(公告)日：2018-01-25

申请号：US15678180

申请日：2017-08-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kiyoshi Kato ,  Jun Koyama

IPC: H01L29/786 ,  H01L23/66 ,  H04B1/40 ,  H01L27/12 ,  H01L29/10 ,  G06K19/077 ,  H01L27/06

CPC classification number: H01L29/78696 ,  G06K19/07749 ,  G06K19/07773 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1225 ,  H01L29/1033 ,  H01L29/7869 ,  H01L2223/6677 ,  H04B1/40 ,  Y02D70/00

Abstract: An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime.

公开(公告)号：US09865742B2

公开(公告)日：2018-01-09

申请号：US13729322

申请日：2012-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Yasuo Nakamura ,  Junpei Sugao ,  Hideki Uochi

IPC: H01L27/14 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/78669 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78678 ,  H01L29/7869

Abstract: It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

公开(公告)号：US09853020B2

公开(公告)日：2017-12-26

申请号：US15367412

申请日：2016-12-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/02 ,  G09G3/3283 ,  G09G3/36 ,  G11C19/28 ,  H02H9/04 ,  H01L27/12

Abstract: Provided are a driver circuit which suppresses damage of a semiconductor element due to ESD in a manufacturing process, a method of manufacturing the driver circuit. Further provided are a driver circuit provided with a protection circuit with low leakage current, and a method of manufacturing the driver circuit. By providing a protection circuit in a driver circuit to be electrically connected to a semiconductor element in the driver circuit, and by forming, at the same time, a transistor which serves as the semiconductor element in the driver circuit and a transistor included in the protection circuit in the driver circuit, damage of the semiconductor element due to ESD is suppressed in the process of manufacturing the driver circuit. Further, by using an oxide semiconductor film for the transistor included in the protection circuit in the driver circuit, leakage current in the protection circuit is reduced.

公开(公告)号：US09806099B2

公开(公告)日：2017-10-31

申请号：US15275687

申请日：2016-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama

IPC: H01L29/12 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

公开(公告)号：US09804462B2

公开(公告)日：2017-10-31

申请号：US14582248

申请日：2014-12-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama

IPC: G02F1/1362 ,  G09G3/36

CPC classification number: G02F1/13624 ,  G09G3/3659 ,  G09G2300/0852

Abstract: A liquid crystal display device with a novel structure is provided. Each pixel includes a first circuit for holding a high level (or low level) potential and a second circuit for holding a low level (or high level) potential. A semiconductor layer of a transistor included in each of the first and second circuits is an oxide semiconductor layer. The second circuit is reset when being supplied with the high level potential. Whether the high level potential held in the second circuit changes is controlled by a data voltage supplied to the first circuit. The potential held in the first circuit and the potential held in the second circuit are respectively supplied to a first transistor and a second transistor.

公开(公告)号：US09741867B2

公开(公告)日：2017-08-22

申请号：US15181621

申请日：2016-06-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kiyoshi Kato ,  Jun Koyama

IPC: H01L29/04 ,  H04M1/00 ,  H01L29/786 ,  H01L27/06 ,  H01L27/12 ,  H04B1/40 ,  G06K19/077 ,  H01L29/10 ,  H01L23/66

CPC classification number: H01L29/78696 ,  G06K19/07749 ,  G06K19/07773 ,  H01L23/66 ,  H01L27/0688 ,  H01L27/1225 ,  H01L29/1033 ,  H01L29/7869 ,  H01L2223/6677 ,  H04B1/40 ,  Y02D70/00

Abstract: An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime.

公开(公告)号：US09721971B2

公开(公告)日：2017-08-01

申请号：US14507204

申请日：2014-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1345 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/023 ,  H01L27/124 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.