公开(公告)号：US20150053971A1

公开(公告)日：2015-02-26

申请号：US14456069

申请日：2014-08-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/24

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

Abstract translation: 在使用包括氧化物半导体的晶体管的半导体器件中，电特性的变化被抑制并提高了可靠性。 半导体器件包括绝缘表面上的栅电极; 与所述栅电极重叠的氧化物半导体膜; 栅极绝缘膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜接触; 与氧化物半导体膜的与栅极绝缘膜接触的表面的相反侧的表面接触的保护膜; 以及与氧化物半导体膜接触的一对电极。 通过电子自旋共振光谱测定的栅极绝缘膜或保护膜的自旋密度低于1×1018自旋/ cm3，优选为1×1017以上/ cm3以上，低于1×1018自旋/ cm3。

公开(公告)号：US20150034947A1

公开(公告)日：2015-02-05

申请号：US14444789

申请日：2014-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Masashi OOTA ,  Koji DAIRIKI ,  Masahiro TAKAHASHI

IPC: H01L29/04 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L29/045 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like is provided. In particular, a crystalline oxide semiconductor film with less defects such as grain boundaries is provided. One embodiment of the present invention is a crystalline oxide semiconductor film which is provided over a substrate and has a region including five or less areas where a transmission electron diffraction pattern showing discontinuous points is observed when an observation area is changed one-dimensionally within a range of 700 nm, using a transmission electron diffraction apparatus with an electron beam having a probe diameter of 1 nm.

Abstract translation: 可以提供可用作晶体管等的半导体膜的结晶氧化物半导体膜。 特别地，提供了具有较少缺陷如晶界的结晶氧化物半导体膜。 本发明的一个实施方案是一种结晶氧化物半导体膜，其设置在基板上并且具有包括五个或更少区域的区域，其中当观察区域在一个范围内改变时观察到显示不连续点的透射电子衍射图案 使用具有探针直径为1nm的电子束的透射电子衍射装置。

公开(公告)号：US20140183532A1

公开(公告)日：2014-07-03

申请号：US14199257

申请日：2014-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US20140110709A1

公开(公告)日：2014-04-24

申请号：US14140044

申请日：2013-12-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo AKIMOTO ,  Junichiro SAKATA ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

Abstract translation: 本发明的目的是提供一种适用于半导体器件的氧化物半导体。 或者，另一目的是提供一种使用氧化物半导体的半导体器件。 提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。 在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

公开(公告)号：US20130069060A1

公开(公告)日：2013-03-21

申请号：US13677504

申请日：2012-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Junichiro SAKATA ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

Abstract translation: 本发明的目的是提供一种适用于半导体器件的氧化物半导体。 或者，另一目的是提供一种使用氧化物半导体的半导体器件。 提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。 在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

公开(公告)号：US20250140843A1

公开(公告)日：2025-05-01

申请号：US18927228

申请日：2024-10-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi MIKAMI ,  Jo SAITO ,  Teruaki OCHIAI ,  Masahiro TAKAHASHI ,  Tatsuyoshi TAKAHASHI ,  Yohei MOMMA ,  Kazutaka KURIKI ,  Kazune YOKOMIZO ,  Shunpei YAMAZAKI ,  Rihito WADA

IPC: H01M4/525 ,  H01M4/02 ,  H01M4/36 ,  H01M10/052 ,  H01M10/0568 ,  H01M10/0569

Abstract: To provide a positive electrode active material in which a phase transition is inhibited and a secondary battery including the positive electrode active material. An unprecedented synthesis method has been developed in which lithium cobalt oxide particles are treated with a molten salt of MgF2—LiF as a reaction accelerator to facilitate the diffusion and doping of magnesium into lithium cobalt oxide bulk and to form a stable coating layer in the particle surface portion. Ex situ XRD analysis confirms the inhibition of the harmful phase transition and the emergence of a novel phase as the modified LiCoO2 is charged up to 4.7 V. The modified LiCoO2 shows high electrochemical performance during high-voltage operation. This technology provides a guideline for suppressing fundamental degradation associated with phase transition and achieving ultra-high energy density LiCoO2 positive electrodes.

公开(公告)号：US20240395943A1

公开(公告)日：2024-11-28

申请号：US18795876

申请日：2024-08-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro TAKAHASHI ,  Naoki OKUNO ,  Tomosato KANAGAWA ,  Shota MIZUKAMI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: A highly reliable semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor and a second conductor over the first insulator; an oxide provided between the first conductor and the second conductor; a second insulator over the first conductor, the second conductor, and the oxide; and a third conductor over the second insulator. A side surface of the first conductor includes a region in contact with one side surface of the oxide, a side surface of the second conductor includes a region in contact with the other side surface of the oxide. The level of a top surface of the first conductor, the level of a top surface of the second conductor, and the level of a top surface of the oxide are substantially the same. The conductivity of the first conductor is higher than that of the oxide, and the conductivity of the second conductor is higher than that of the oxide.

公开(公告)号：US20240321897A1

公开(公告)日：2024-09-26

申请号：US18616481

申请日：2024-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12 ,  C23C14/08 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/66 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L2924/0002

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US20240321577A1

公开(公告)日：2024-09-26

申请号：US18668768

申请日：2024-05-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA ,  Tomosato KANAGAWA ,  Shunpei YAMAZAKI

IPC: H01L21/02 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  H01L21/66

CPC classification number: H01L21/02554 ,  C23C14/081 ,  C23C14/086 ,  C23C14/087 ,  C23C14/34 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02631 ,  H01L22/12 ,  C23C14/0036 ,  C23C14/08

Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

公开(公告)号：US20240113226A1

公开(公告)日：2024-04-04

申请号：US18368630

申请日：2023-09-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke MATSUBAYASHI ,  Yuichi YANAGISAWA ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L29/10

CPC classification number: H01L29/7869 ,  H01L29/1095 ,  H01L29/78696

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.