公开(公告)号：US09947777B2

公开(公告)日：2018-04-17

申请号：US15492253

申请日：2017-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kazutaka Kuriki ,  Yuji Egi ,  Hiromi Sawai ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1262 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: Provided is a semiconductor device having favorable reliability. A manufacturing method of a semiconductor device comprising the steps of: forming a first oxide semiconductor having an island shape; forming a first conductor and a second conductor over the first oxide semiconductor; forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor; forming a first insulating film over the oxide semiconductor film; forming a conductive film over the first insulating film; removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor; forming a second insulating film covering the first insulator and the third conductor; removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor; forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor; forming a fourth insulator in contact with the third insulator; and performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.

公开(公告)号：US09911864B2

公开(公告)日：2018-03-06

申请号：US15634167

申请日：2017-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noritaka Ishihara ,  Masashi Oota ,  Masashi Tsubuku ,  Masami Jintyou ,  Yukinori Shima ,  Junichi Koezuka ,  Yasuharu Hosaka ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/423 ,  H01L29/24 ,  H01L29/45 ,  H01L29/04 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

公开(公告)号：US09595435B2

公开(公告)日：2017-03-14

申请号：US14055970

申请日：2013-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Ryosuke Watanabe ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

Abstract: To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.

Abstract translation: 形成具有低密度局部化水平的氧化物半导体膜。 为了改善包括氧化物半导体的半导体器件的电特性。 在与用作沟道的氧化物半导体膜接触的含有In或Ga的氧化物膜上加氧后，进行热处理，使含有In或Ga的氧化物膜中的氧转移到作为通道发挥作用的氧化物半导体膜， 使得氧化物半导体膜中的氧空位量减少。 此外，形成含有In或Ga的氧化物膜，在氧化膜上添加氧，在氧化膜上形成氧化物半导体膜，然后进行热处理。

公开(公告)号：US09496413B2

公开(公告)日：2016-11-15

申请号：US15053594

申请日：2016-02-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Masashi Oota ,  Hideyuki Kishida

IPC: H01L21/336 ,  H01L29/786 ,  H01L29/78 ,  H01L21/44 ,  H01L29/04 ,  H01L21/477 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

公开(公告)号：US09343578B2

公开(公告)日：2016-05-17

申请号：US14141838

申请日：2013-12-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Shinpei Matsuda ,  Masashi Oota ,  Noritaka Ishihara

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/51 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/517 ,  H01L29/78606 ,  H01L29/78693 ,  H01L29/78696

Abstract: A semiconductor device includes an oxide semiconductor layer over a first oxide layer; first source and drain electrodes over the oxide semiconductor layer; second source and drain electrodes over the first source and drain electrodes respectively; a second oxide layer over the first source and drain electrodes; a gate insulating layer over the second source and drain electrodes and the second oxide layer; and a gate electrode overlapping the oxide semiconductor layer with the gate insulating layer provided therebetween. The structure in which the oxide semiconductor layer is sandwiched by the oxide layers can suppress the entry of impurities into the oxide semiconductor layer. The structure in which the oxide semiconductor layer is contacting with the source and drain electrodes can prevent increasing resistance between the source and the drain comparing one in which an oxide semiconductor layer is electrically connected to source and drain electrodes through an oxide layer.

Abstract translation: 半导体器件包括在第一氧化物层上的氧化物半导体层; 在氧化物半导体层上的第一源极和漏极; 分别在第一源极和漏极上的第二源极和漏极; 在第一源极和漏极上的第二氧化物层; 在第二源极和漏极电极和第二氧化物层上的栅极绝缘层; 并且与氧化物半导体层重叠的栅电极与设置在其间的栅极绝缘层。 氧化物半导体层被氧化物层夹持的结构可以抑制杂质进入氧化物半导体层。 氧化物半导体层与源极和漏极接触的结构可以防止源极和漏极之间的电阻增加，其中氧化物半导体层通过氧化物层与源极和漏极电连接。

公开(公告)号：US09267199B2

公开(公告)日：2016-02-23

申请号：US14187960

申请日：2014-02-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Masashi Oota ,  Yoichi Kurosawa ,  Noritaka Ishihara

IPC: C23C14/08 ,  C01G15/00 ,  B82Y30/00 ,  C23C14/34 ,  H01B1/08

CPC classification number: H01L21/02631 ,  B82Y30/00 ,  C01G15/006 ,  C01P2002/32 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C30B1/04 ,  C30B23/08 ,  C30B28/02 ,  C30B29/22 ,  C30B29/68 ,  H01J37/3429 ,  H01J2237/081 ,  H01J2237/3322 ,  H01J2237/3323 ,  H01L21/02565 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Abstract translation: 提供一种可以形成具有少量缺陷的氧化物半导体膜的溅射靶的制造方法。 或者，形成具有少量缺陷的氧化物半导体膜。 提供一种制造溅射靶的方法，其包括以下步骤：形成多晶In-M-Zn氧化物（M表示选自铝，钛，镓，钇，锆，镧，铯，钕和铪中的金属 ）粉末，通过混合，烧结和研磨氧化铟，金属氧化物和氧化锌; 通过混合多晶In-M-Zn氧化物粉末和氧化锌粉末形成混合物; 通过压实混合物形成压块; 并烧结成型。

公开(公告)号：US08890159B2

公开(公告)日：2014-11-18

申请号：US13953428

申请日：2013-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Ryosuke Watanabe ,  Masashi Oota ,  Noritaka Ishihara ,  Koki Inoue

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L29/1054 ,  H01L22/14 ,  H01L29/247 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.

Abstract translation: 提供了不容易引起晶体管的电特性变化并且具有高稳定性的氧化物半导体层叠膜。 此外，提供了在其沟道形成区域中包括氧化物半导体层叠膜并且具有稳定的电特性的晶体管。 氧化物半导体层叠膜包括依次堆叠并且各自含有铟，镓和锌的第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层。 第二氧化物半导体层中的铟的含量百分比高于第一氧化物半导体层和第三氧化物半导体层中的铟的含量百分比，并且通过CPM测量的氧化物半导体层叠膜的吸收系数低于或等于 在1.5eV至2.3eV的能量范围内等于3×10-3 / cm。

公开(公告)号：US08860023B2

公开(公告)日：2014-10-14

申请号：US13870399

申请日：2013-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi Tsubuku ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Masashi Oota ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/477 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78696

Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.

Abstract translation: 降低氧化物半导体的沟道形成区域中的氢浓度对于稳定包括氧化物半导体的晶体管的阈值电压和提高可靠性是重要的。 因此，氢被氧化物半导体吸引并被捕获在与氧化物半导体的源极区域和漏极区域重叠的绝缘膜的区域中。 杂质如氩，氮，碳，磷或硼添加到与氧化物半导体的源极区和漏极区重叠的绝缘膜的区域中，从而产生缺陷。 氧化物半导体中的氢被吸引到绝缘膜中的缺陷。 通过氢气的存在使绝缘膜中的缺陷稳定。