Abstract:
An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.
Abstract:
A light emitting device includes a first bonding pad configured to be mounted to a substrate, a first electrode electrically connected to the first bonding pad, a first conductive type semiconductor layer having a middle area disposed between two, opposing end areas, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer and connected to the first electrode; and a first contact portion and a plurality of second contact portions disposed on the first conductive type semiconductor layer, in which the first contact portion is disposed adjacent one end area of the first conductive type semiconductor layer, the second contact portions are disposed in the middle area of the first conductive type semiconductor layer, and the first bonding pad exposes at least one of the second contact portion.
Abstract:
A light emitting device and method of fabricating the same using a wafer level package process are disclosed. The light emitting device has improved heat dissipation to prevent damage by heat, thereby achieving improvement in reliability and luminous efficacy. In addition, the light emitting device has a small difference in coefficients of thermal expansion and thus can reduce stress applied to a light emitting structure to prevent damage to the light emitting structure, thereby achieving improvement in reliability and luminous efficacy.
Abstract:
A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed.
Abstract:
A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed.
Abstract:
A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.
Abstract:
A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.
Abstract:
A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material.
Abstract:
A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.
Abstract:
A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.