公开(公告)号：US20240389393A1

公开(公告)日：2024-11-21

申请号：US18292983

申请日：2022-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Ryota HODO ,  Kentaro SUGAYA ,  Yoshikazu HIURA ,  Takahiro FUJIE ,  Yasuhiro JINBO

IPC: H10K59/122 ,  H10K50/17 ,  H10K50/18 ,  H10K59/12 ,  H10K59/38 ,  H10K71/20

Abstract: A display device with high display quality is provided. The display device includes a plurality of light-emitting devices each including a pixel electrode, a light-emitting layer, a functional layer, a common layer, and a common electrode in this order and includes an insulating layer positioned between side surfaces of the light-emitting layers adjacent to each other. The light-emitting layer and the functional layer each having an island shape are provided in each light-emitting device, and the plurality of light-emitting devices share the common layer. The common layer and the common electrode are provided to cover the insulating layer. In a cross-sectional view, an end portion of the insulating layer has a tapered shape with a taper angle greater than 0° and less than 90°. The plurality of light-emitting devices each contain a first light-emitting material emitting blue light and a second light-emitting material emitting light having a longer wavelength than blue. A coloring layer is provided to overlap with each of the plurality of light-emitting devices.

公开(公告)号：US20240224734A1

公开(公告)日：2024-07-04

申请号：US18555903

申请日：2022-04-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuhiro JINBO ,  Toshikazu OHNO ,  Shiyuu NUMATA

IPC: H10K59/80 ,  H10K50/19 ,  H10K71/60

CPC classification number: H10K59/874 ,  H10K50/19 ,  H10K71/60

Abstract: A highly reliable display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, and an inorganic insulating layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer. The inorganic insulating layer covers side surfaces of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer. The hydrogen concentration and the carbon concentration in the inorganic insulating layer are each preferably sufficiently low.

公开(公告)号：US20240186160A1

公开(公告)日：2024-06-06

申请号：US18281619

申请日：2022-03-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Yasuhiro JINBO ,  Kenichi OKAZAKI

IPC: H01L21/67 ,  C23C14/02 ,  C23C14/06 ,  C23C14/24 ,  C23C14/34 ,  C23C14/56 ,  C23C14/58 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56 ,  G03F7/00 ,  G03F7/38

CPC classification number: H01L21/67236 ,  C23C14/021 ,  C23C14/0652 ,  C23C14/24 ,  C23C14/34 ,  C23C14/568 ,  C23C14/5873 ,  C23C16/0236 ,  C23C16/0245 ,  C23C16/403 ,  C23C16/45544 ,  C23C16/54 ,  C23C16/56 ,  G03F7/0035 ,  G03F7/38 ,  G03F7/7075 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207

Abstract: Manufacturing equipment in which processes from processing to sealing of an organic compound film can be successively performed is provided. A patterning process of a light-emitting device and a sealing process that is performed to prevent the surface and side surface of an organic layer from being exposed to the air can be performed successively, whereby a minute light-emitting device with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can be incorporated in in-line manufacturing equipment where apparatuses are arranged in the order of processes for a light-emitting device, resulting in high throughput manufacturing.

公开(公告)号：US20240179935A1

公开(公告)日：2024-05-30

申请号：US18283511

申请日：2022-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Yasuhiro JINBO ,  Kenichi OKAZAKI

IPC: H10K50/13 ,  H10K50/19 ,  H10K71/13 ,  H10K71/20 ,  H10K71/60

CPC classification number: H10K50/13 ,  H10K50/19 ,  H10K71/13 ,  H10K71/233 ,  H10K71/60

Abstract: A display device with high display quality and high reliability is provided. The display device includes a first light-emitting element, a second light-emitting element positioned to be adjacent to the first light-emitting element, a first protective layer, a second protective layer, and an insulating layer. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. The first EL layer is provided over the first pixel electrode, and the second EL layer is provided over the second pixel electrode. The first protective layer includes a region overlapping with a side surface of the first pixel electrode, a side surface of the second pixel electrode, a side surface of the first EL layer, and a side surface of the second EL layer. The insulating layer is provided over the first protective layer, and the second protective layer is provided over the insulating layer. The common electrode is provided over the first EL layer, over the second EL layer, and over the second protective layer.

公开(公告)号：US20240113207A1

公开(公告)日：2024-04-04

申请号：US18539700

申请日：2023-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Yasuhiro JINBO

IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H10B12/00

CPC classification number: H01L29/66969 ,  H01L21/02345 ,  H01L21/02565 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/41733 ,  H01L29/78648 ,  H01L29/7869 ,  H10B12/00

Abstract: A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed. The microwave treatment is performed using a gas containing oxygen under reduced pressure, and the heat treatment is performed under reduced pressure.

公开(公告)号：US20240088172A1

公开(公告)日：2024-03-14

申请号：US18512392

申请日：2023-11-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshiharu HIRAKATA ,  Takashi HAMADA ,  Kohei YOKOYAMA ,  Yasuhiro JINBO ,  Tetsuji ISHITANI ,  Daisuke KUBOTA

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H10K50/842

CPC classification number: H01L27/1262 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/136213 ,  G02F1/1368 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/78648 ,  H10K50/8426 ,  H10K50/8428 ,  H10K50/844

Abstract: A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.

公开(公告)号：US20230329002A1

公开(公告)日：2023-10-12

申请号：US18023618

申请日：2021-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Hitoshi KUNITAKE ,  Haruyuki BABA ,  Yuki ITO ,  Fumito ISAKA ,  Kazuki TANEMURA ,  Yasumasa YAMANE ,  Tatsuya ONUKI

IPC: H10B53/30

CPC classification number: H10B53/30

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.

公开(公告)号：US20230326751A1

公开(公告)日：2023-10-12

申请号：US18041251

申请日：2021-08-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yuji EGI ,  Yasuhiro JINBO ,  Yujiro SAKURADA

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/02565 ,  H01L21/0262 ,  H01L29/7869 ,  C23C16/405 ,  C23C16/45527

Abstract: A metal oxide with excellent thickness uniformity is provided. A method for manufacturing a metal oxide with reduced hydrogen concentration in SIMS analysis includes a first step of introducing a precursor and a carrier/purge gas; a second step of stopping the introduction of the precursor and exhausting the precursor; a third step of introducing an oxidizing gas; and a fourth step of stopping the introduction of the oxidizing gas and exhausting the oxidizing gas. The first step to the fourth step are performed in a temperature range higher than or equal to 210° C. and lower than or equal to 300° C.

公开(公告)号：US20230023720A1

公开(公告)日：2023-01-26

申请号：US17786271

申请日：2020-12-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yasuhiro JINBO ,  Yuji EGI

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device with a small variation in characteristics is provided. A semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and placed between the first conductor and the second conductor, a sixth insulator over the fifth insulator, and a third conductor over the sixth insulator. The third conductor includes a region overlapping the oxide. The fifth insulator includes a region in contact with the oxide, the first conductor, the second conductor, and each of the first insulator to the fourth insulator. The fifth insulator contains nitrogen, oxygen, and silicon.

公开(公告)号：US20220238719A1

公开(公告)日：2022-07-28

申请号：US17617015

申请日：2020-06-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiromi SAWAI ,  Hiroki KOMAGATA ,  Yasuhiro JINBO ,  Naoki OKUNO ,  Yoshihiro KOMATSU ,  Motoharu ANDO ,  Tomoaki MORIWAKA ,  Koji MORIYA ,  Jun ISHIKAWA

IPC: H01L29/786

Abstract: A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a semiconductor film, a pair of blocking films over the semiconductor film, and an insulating film provided over the semiconductor film and between the pair of blocking films. The semiconductor film includes a pair of n-type regions and an i-type region provided between the pair of n-type regions. The n-type regions overlap with the blocking films. The i-type region overlaps with the insulating film.