公开(公告)号：US08846482B2

公开(公告)日：2014-09-30

申请号：US13240877

申请日：2011-09-22

申请人： David P. Bour ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Thomas R. Prunty ,  Linda Romano ,  Andrew P. Edwards ,  Hui Nie ,  Mahdan Raj

发明人： David P. Bour ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Thomas R. Prunty ,  Linda Romano ,  Andrew P. Edwards ,  Hui Nie ,  Mahdan Raj

IPC分类号： H01L21/8222 ,  H01L21/322 ,  H01L29/778 ,  H01L21/338 ,  H01L21/225 ,  H01L29/66 ,  H01L29/20 ,  H01L29/861 ,  H01L29/207 ,  H01L21/265 ,  H01L29/808 ,  H01L29/872

CPC分类号： H01L21/26546 ,  H01L21/0332 ,  H01L21/2258 ,  H01L21/266 ,  H01L21/3245 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/872

摘要： A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer.

摘要翻译： 在III族氮化物衬底中形成掺杂区域的方法包括提供III族氮化物衬底并形成具有预定图案并与III族氮化物衬底的一部分耦合的掩模层。 III族氮化物衬底的特征在于第一导电类型，并且预定图案限定III族氮化物衬底的暴露区域。 该方法还包括将III族氮化物衬底加热到​​预定温度，并将双前体气体放置在III族氮化物衬底的暴露区域附近。 双前体气体包括氮源和掺杂剂源。 该方法还包括将预定温度保持预定时间段，形成与III族氮化物衬底的暴露区域相邻的p型III族氮化物区域，以及去除掩模层。

公开(公告)号：US08829574B2

公开(公告)日：2014-09-09

申请号：US13334514

申请日：2011-12-22

申请人： Donald R. Disney ,  Isik C. Kizilyalli ,  Hui Nie ,  Linda Romano ,  Richard J. Brown ,  Madhan Raj

发明人： Donald R. Disney ,  Isik C. Kizilyalli ,  Hui Nie ,  Linda Romano ,  Richard J. Brown ,  Madhan Raj

IPC分类号： H01L29/808 ,  H01L21/335 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/66924 ,  H01L21/027 ,  H01L21/283 ,  H01L21/308 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66446 ,  H01L29/66893 ,  H01L29/66909 ,  H01L29/66916 ,  H01L29/7832 ,  H01L29/808 ,  H01L29/8083 ,  H01L29/8086

摘要： A semiconductor device includes a III-nitride substrate, a first III-nitride epitaxial layer coupled to the III-nitride substrate and having a mesa, and a second III-nitride epitaxial layer coupled to a top surface of the mesa. The semiconductor device further includes a III-nitride gate structure coupled to a side surface of the mesa, and a spacer configured to provide electrical insulation between the second III-nitride epitaxial layer and the III-nitride gate structure.

摘要翻译： 半导体器件包括III族氮化物衬底，耦合到III族氮化物衬底并具有台面的第一III族氮化物外延层和耦合到台面的顶表面的第二III族氮化物外延层。 半导体器件还包括耦合到台面的侧表面的III族氮化物栅极结构，以及被配置为在第二III族氮化物外延层和III族氮化物栅极结构之间提供电绝缘的间隔物。

公开(公告)号：US08749015B2

公开(公告)日：2014-06-10

申请号：US13299254

申请日：2011-11-17

申请人： Donald R. Disney ,  Andrew P. Edwards ,  Hui Nie ,  Richard J. Brown ,  Isik C. Kizilyalli ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Donald R. Disney ,  Andrew P. Edwards ,  Hui Nie ,  Richard J. Brown ,  Isik C. Kizilyalli ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/06

CPC分类号： H01L21/761 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/765 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66136 ,  H01L29/66212 ,  H01L29/6631 ,  H01L29/66909 ,  H01L29/8083 ,  H01L29/872

摘要： A method for fabricating an edge termination structure includes providing a substrate having a first surface and a second surface and a first conductivity type, forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate, and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The method also includes implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer. The method further includes forming an active device coupled to the second region of the second GaN epitaxial layer and forming the edge termination structure coupled to the third region of the second GaN epitaxial layer.

摘要翻译： 一种用于制造边缘终端结构的方法包括提供具有第一表面和第二表面和第一导电类型的衬底，形成耦合到衬底的第一表面的第一导电类型的第一GaN外延层，并形成第二 与第一导电类型相反的第二导电类型的GaN外延层。 第二GaN外延层耦合到第一GaN外延层。 该方法还包括将离子注入第二GaN外延层的第一区域以将第二GaN外延层的第二区域与第二GaN外延层的第三区域电隔离。 该方法还包括形成耦合到第二GaN外延层的第二区域并形成耦合到第二GaN外延层的第三区域的边缘端接结构的有源器件。

公开(公告)号：US20130161634A1

公开(公告)日：2013-06-27

申请号：US13335383

申请日：2011-12-22

申请人： Donald R. Disney ,  Isik C. Kizilyalli ,  Linda Romano ,  Andrew Edwards ,  Hui Nie

发明人： Donald R. Disney ,  Isik C. Kizilyalli ,  Linda Romano ,  Andrew Edwards ,  Hui Nie

IPC分类号： H01L29/18 ,  H01L21/302

CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L21/2654 ,  H01L21/76224 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/402

摘要： A method for fabricating an edge termination, which can be used in conjunction with GaN-based materials, includes providing a substrate of a first conductivity type. The substrate has a first surface and a second surface. The method also includes forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The substrate, the first GaN epitaxial layer and the second GaN epitaxial layer can be referred to as an epitaxial structure.

摘要翻译： 可以与GaN基材料一起使用的用于制造边缘终端的方法包括提供第一导电类型的衬底。 基板具有第一表面和第二表面。 该方法还包括形成耦合到衬底的第一表面的第一导电类型的第一GaN外延层，并形成与第一导电类型相反的第二导电类型的第二GaN外延层。 第二GaN外延层耦合到第一GaN外延层。 衬底，第一GaN外延层和第二GaN外延层可以被称为外延结构。

公开(公告)号：US20130127006A1

公开(公告)日：2013-05-23

申请号：US13300028

申请日：2011-11-18

申请人： Madhan Raj ,  Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  lsik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano

发明人： Madhan Raj ,  Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  lsik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano

IPC分类号： H01L29/47 ,  H01L21/20

CPC分类号： H01L29/66143 ,  H01L29/0661 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66212 ,  H01L29/872

摘要： A method for fabricating a III-nitride semiconductor device includes providing a III-nitride substrate having a first surface and a second surface opposing the first surface, forming a III-nitride epitaxial layer coupled to the first surface of the III-nitride substrate, and removing at least a portion of the III-nitride epitaxial layer to form a first exposed surface. The method further includes forming a dielectric layer coupled to the first exposed surface, removing at least a portion of the dielectric layer, and forming a metallic layer coupled to a remaining portion of the dielectric layer such that the remaining portion of the dielectric layer is disposed between the III-nitride epitaxial layer and the metallic layer.

摘要翻译： 一种制造III族氮化物半导体器件的方法包括提供具有第一表面和与第一表面相对的第二表面的III族氮化物衬底，形成耦合到III族氮化物衬底的第一表面的III族氮化物外延层，以及 去除所述III族氮化物外延层的至少一部分以形成第一暴露表面。 该方法还包括形成耦合到第一暴露表面的电介质层，去除电介质层的至少一部分，以及形成耦合到电介质层的剩余部分的金属层，使得电介质层的剩余部分被布置 在III族氮化物外延层和金属层之间。

公开(公告)号：US20130126888A1

公开(公告)日：2013-05-23

申请号：US13301165

申请日：2011-11-21

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/20 ,  H01L21/329

CPC分类号： H01L21/2654 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/6631 ,  H01L29/66446 ,  H01L29/66856 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： An edge terminated semiconductor device is described including a GaN substrate; a doped GaN epitaxial layer grown on the GaN substrate including an ion-implanted insulation region, wherein the ion-implanted region has a resistivity that is at least 90% of maximum resistivity and a conductive layer, such as a Schottky metal layer, disposed over the GaN epitaxial layer, wherein the conductive layer overlaps a portion of the ion-implanted region. A Schottky diode is prepared using the Schottky contact structure.

摘要翻译： 描述了边缘端接的半导体器件，其包括GaN衬底; 在包括离子注入绝缘区域的GaN衬底上生长的掺杂GaN外延层，其中所述离子注入区域具有至少为最大电阻率的90％的电阻率和诸如肖特金属层的导电层设置在 所述GaN外延层，其中所述导电层与所述离子注入区域的一部分重叠。 使用肖特基接触结构制备肖特基二极管。

公开(公告)号：US20130112985A1

公开(公告)日：2013-05-09

申请号：US13289219

申请日：2011-11-04

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L29/66909 ,  H01L21/823487 ,  H01L27/0605 ,  H01L27/0611 ,  H01L27/0629 ,  H01L27/0727 ,  H01L27/098 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/8083 ,  H01L29/872

摘要： An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction.

公开(公告)号：US20050066883A1

公开(公告)日：2005-03-31

申请号：US10673092

申请日：2003-09-25

申请人： Robert Dubrow ,  Linda Romano ,  David Stumbo

发明人： Robert Dubrow ,  Linda Romano ,  David Stumbo

IPC分类号： B82B20060101 ,  C30B7/00 ,  C30B21/02 ,  C30B28/06 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02422 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B7/00 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02656 ,  Y10S977/762 ,  Y10S977/827

摘要： Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.

摘要翻译： 用于将纳米材料沉积到接收衬底上并且任选地用于以期望取向沉积那些材料的方法和系统，其包括在转移衬底上提供纳米材料并使纳米材料与设置在接收衬底的表面或表面的部分上的粘附材料接触 。 可选地通过在传送过程中相对于彼此移动传送和接收基板来提供取向。

公开(公告)号：US08946788B2

公开(公告)日：2015-02-03

申请号：US13198661

申请日：2011-08-04

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/76 ,  H01L29/207 ,  H01L21/02 ,  H01L29/66 ,  H01L29/808 ,  H01L29/872 ,  H01L29/10 ,  H01L29/20

CPC分类号： H01L29/66909 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66893 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/872

摘要： A method of growing a III-nitride-based epitaxial structure includes providing a substrate in an epitaxial growth reactor and heating the substrate to a predetermined temperature. The method also includes flowing a gallium-containing gas into the epitaxial growth reactor and flowing a nitrogen-containing gas into the epitaxial growth reactor. The method further includes flowing a gettering gas into the epitaxial growth reactor. The predetermined temperature is greater than 1000° C.

摘要翻译： 生长III族氮化物基外延结构的方法包括在外延生长反应器中提供衬底并将衬底加热至预定温度。 该方法还包括将含镓气体流入外延生长反应器并将含氮气体流入外延生长反应器中。 该方法还包括将吸气气体流入外延生长反应器。 预定温度大于1000℃

公开(公告)号：US08836071B2

公开(公告)日：2014-09-16

申请号：US13300009

申请日：2011-11-18

申请人： Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  Madhan Raj

发明人： Richard J. Brown ,  Thomas R. Prunty ,  David P. Bour ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  Madhan Raj

IPC分类号： H01L29/47 ,  H01L29/872 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/872 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66143

摘要： A method of fabricating a Schottky diode using gallium nitride (GaN) materials includes providing an n-type GaN substrate having a first surface and a second surface. The second surface opposes the first surface. The method also includes forming an ohmic metal contact electrically coupled to the first surface of the n-type GaN substrate and forming an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate. The method further includes forming an n-type aluminum gallium nitride (AlGaN) surface layer coupled to the n-type GaN epitaxial layer and forming a Schottky contact electrically coupled to the n-type AlGaN surface layer.

摘要翻译： 使用氮化镓（GaN）材料制造肖特基二极管的方法包括提供具有第一表面和第二表面的n型GaN衬底。 第二表面与第一表面相反。 该方法还包括形成电耦合到n型GaN衬底的第一表面的欧姆金属接触并形成耦合到n型GaN衬底的第二表面的n型GaN外延层。 该方法还包括形成耦合到n型GaN外延层并形成电耦合到n型AlGaN表面层的肖特基接触的n型氮化镓铝（AlGaN）表面层。