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公开(公告)号：US09896328B2
公开(公告)日：2018-02-20
申请号：US15485835
申请日：2017-04-12
Applicant: International Business Machines Corporation
Inventor： Urs T. Duerig , Armin W. Knoll , Elad Koren , Emanuel Loertscher
CPC classification number: H01H59/0009 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2203/04 , H01H1/0036 , H01H1/0094 , H01H55/00 , H01H57/00 , H01H61/01 , H01H2001/0052 , H01H2001/0078 , H01H2057/006 , H01H2061/006 , H01L41/0478 , H01L41/09
Abstract: An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.
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公开(公告)号：US20180033564A1
公开(公告)日：2018-02-01
申请号：US15470431
申请日：2017-03-27
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giovanni Campardo , Carlo Valzasina
CPC classification number: H01H1/0036 , B81B7/0003 , B81B7/007 , B81B7/04 , B81B2201/01 , B81B2203/0118 , B81B2207/01 , H01H1/0094 , H01H59/0009 , H01H2001/0042 , H01H2001/0068 , H01H2001/0078 , H01H2001/145
Abstract: A microelectromechanical device, in particular a non-volatile memory module or a relay, comprising: a mobile body including a top region and a bottom region; top electrodes facing the top region; and bottom electrodes, facing the bottom region. The mobile body is, in a resting condition, at a distance from the electrodes. The latter can be biased for generating a movement of the mobile body for causing a direct contact of the top region with the top electrodes and, in a different operating condition, a direct contact of the bottom region with the bottom electrodes. In the absence of biasing, molecular-attraction forces maintain in stable mutual contact the top region and the top electrodes or, alternatively, the bottom region and the bottom electrodes.
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公开(公告)号：US09881760B2
公开(公告)日：2018-01-30
申请号：US15433554
申请日：2017-02-15
Applicant: International Business Machines Corporation
Inventor： Urs T. Duerig , Armin W. Knoll , Elad Koren , Emanuel Loertscher
IPC: H01C10/38 , H01H59/00 , B81B3/00 , H01L41/09 , H01L41/047 , H01H57/00 , H01H61/01 , H01H55/00 , H01H61/00
CPC classification number: H01H59/0009 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2203/04 , H01H1/0036 , H01H1/0094 , H01H55/00 , H01H57/00 , H01H61/01 , H01H2001/0052 , H01H2001/0078 , H01H2057/006 , H01H2061/006 , H01L41/0478 , H01L41/09
Abstract: An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.
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公开(公告)号：US20180026160A1
公开(公告)日：2018-01-25
申请号：US15549363
申请日：2016-02-03
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Peter Van Delft , Theodorus Johannes Petrus Van Den Biggelaar , Harald Josef Guenther Radermacher , Bob Bernardus Anthonius Theunissen
CPC classification number: H01L33/36 , B81B2201/01 , H01H1/0036 , H01L27/15 , H01L33/005
Abstract: The invention provides an LED chip having an integrated electrostatic switch for electromechanical control of the LED. A suspended beam switch floats above a conductive control electrode, and by a charging of the electrode may be attracted downward to make connection between an LED structure and an external electrode. Components are mounted on a common substrate so that a fully integrated LED with MEMS switch is formed. Methods for producing the LED chip are further provided, in which production of the switching mechanism is fully integrated with the production of the LED structure.
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公开(公告)号：US09815690B2
公开(公告)日：2017-11-14
申请号：US15212888
申请日：2016-07-18
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Russell T. Herrin , Jeffrey C. Maling , Anthony K. Stamper
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.
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Patent Agency Ranking
公开(公告)号：US20170217758A1
公开(公告)日：2017-08-03
申请号：US15485835
申请日：2017-04-12
Applicant: International Business Machines Corporation
Inventor： Urs T. Duerig , Armin W. Knoll , Elad Koren , Emanuel Loertscher
CPC classification number: H01H59/0009 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2203/04 , H01H1/0036 , H01H1/0094 , H01H55/00 , H01H57/00 , H01H61/01 , H01H2001/0052 , H01H2001/0078 , H01H2057/006 , H01H2061/006 , H01L41/0478 , H01L41/09
Abstract: An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.
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公开(公告)号：US09711432B2
公开(公告)日：2017-07-18
申请号：US15110026
申请日：2015-01-07
Applicant: SAFRAN ELECTRONICS & DEFENSE
Inventor： Jean-Christophe Riou
IPC: H01L23/495 , H01L23/44 , H05K7/20 , H01L23/00 , B81B7/00 , H01L23/06 , H01L23/367 , H01L23/373 , H01L25/07
CPC classification number: H01L23/44 , B81B7/0093 , B81B2201/01 , H01L23/06 , H01L23/3675 , H01L23/3736 , H01L23/49541 , H01L23/49568 , H01L24/48 , H01L24/73 , H01L25/074 , H01L2224/48091 , H01L2224/48106 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/0002 , H01L2924/01013 , H01L2924/01022 , H01L2924/01026 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/10272 , H01L2924/1033 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/1461 , H01L2924/19107 , H05K7/20236 , H05K7/20927 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
Abstract: An electronic device comprising at least one electronic component mounted on a support and surrounded by a deformable casing containing a heat-conducting and electrically-insulating liquid, the device comprising a heat dissipation plate that is substantially parallel to the support and spaced apart therefrom, and heat exchange means for heat exchange by conduction between the casing and the plate, the heat-conducting and electrically-insulating liquid being selected and the casing being arranged so that thermal expansion of the oil leads to the casing applying force against the means for heat exchange by conduction.
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公开(公告)号：US09624099B2
公开(公告)日：2017-04-18
申请号：US14966128
申请日：2015-12-11
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. Jahnes , Anthony K. Stamper
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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公开(公告)号：US20160233097A1
公开(公告)日：2016-08-11
申请号：US15007867
申请日：2016-01-27
Inventor： Robert W. Carpick , Frank Streller , Rahul Agarwal , Filippo Mangolini
IPC: H01L21/285 , C01B33/06 , H01L29/45 , H01L21/768 , B81C1/00 , B81B3/00
CPC classification number: H01L21/28518 , B81B3/0086 , B81B2201/01 , B81B2203/04 , B81C1/00698 , B81C2201/0181 , C01B33/06 , H01L29/456 , H01L29/84
Abstract: The disclosed subject matter provides thin films including a metal silicide and methods for forming such films. The disclosed subject matter can provide techniques for tailoring the electronic structure of metal thin films to produce desirable properties. In example embodiments, the metal silicide can comprise a platinum silicide, such as for example, PtSi, Pt2Si, or Pt3Si. For example, the disclosed subject matter provides methods which include identifying a desired phase of a metal silicide, providing a substrate, depositing at least two film layers on the substrate which include a first layer including amorphous silicon and a second layer including metal contacting the first layer, and annealing the two film layers to form a metal silicide. Methods can be at least one of a source-limited method and a kinetically-limited method. The film layers can be deposited on the substrate using techniques known in the art including, for example, sputter depositing.
Abstract translation: 所公开的主题提供了包括金属硅化物的薄膜和用于形成这种膜的方法。 所公开的主题可以提供用于定制金属薄膜的电子结构以产生期望特性的技术。 在示例性实施例中，金属硅化物可以包括铂硅化物，例如PtSi，Pt 2 Si或Pt 3 Si。 例如，所公开的主题提供了包括识别金属硅化物的期望相位，提供衬底，在衬底上沉积至少两个膜层的方法，该至少两个膜层包括包含非晶硅的第一层和包括与第一层接触的金属的第二层 层，并且退火两个膜层以形成金属硅化物。 方法可以是源限制方法和动力学限制方法中的至少一种。 可以使用本领域已知的技术将膜层沉积在基板上，包括例如溅射沉积。
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公开(公告)号：US09413337B2
公开(公告)日：2016-08-09
申请号：US13873964
申请日：2013-04-30
Applicant: Wispry, Inc.
Inventor： Arthur S. Morris, III
IPC: H03H7/00 , H03J5/02 , H01L23/522 , H01L49/02 , H01L27/06
CPC classification number: H03J5/0209 , B81B7/008 , B81B2201/01 , B81B2207/053 , B81C1/00238 , B81C2203/0785 , H01L23/5223 , H01L27/0688 , H01L28/40 , H01L28/60 , H01L2924/0002 , H03J2200/10 , Y10T29/49105 , H01L2924/00
Abstract: The present subject matter relates to systems and methods for arranging and controlling programmable combinations of tuning elements in which more than one form of switching technology is combined in a single array. Specifically, such an array can include one or more first switchable elements including a first switching technology (e.g., one or more solid-state-controlled devices) and one or more second switchable elements including a second switching technology that is different than the first switching technology (e.g., one or more micro-electro-mechanical capacitors). The one or more first switchable elements and the one or more second switchable elements can be configured, however, to deliver a combined variable reactance.
Abstract translation: 本主题涉及用于布置和控制调谐元件的可编程组合的系统和方法，其中多个形式的开关技术组合在单个阵列中。 具体地，这样的阵列可以包括一个或多个第一可切换元件，包括第一切换技术（例如，一个或多个固态控制设备）和一个或多个第二可切换元件，其包括与第一开关不同的第二开关技术 技术（例如，一个或多个微电机电容器）。 然而，可以配置一个或多个第一可切换元件和一个或多个第二可切换元件以传递组合的可变电抗。
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