公开(公告)号：US07799656B2

公开(公告)日：2010-09-21

申请号：US12045853

申请日：2008-03-11

Applicant: Luc Ouellet ,  Patrick Wright

Inventor： Luc Ouellet ,  Patrick Wright

IPC: H01L21/46 ,  H01L21/31

CPC classification number: B81C1/00071 ,  B81B2201/06 ,  B81C2201/0191

Abstract: A method is disclosed for making a MEMS device wherein anhydrous HF exposed silicon nitride is used as a temporary adhesion layer allowing the transfer of a layer from a Carrier Wafer to a Device Wafer.

Abstract translation: 公开了一种用于制造MEMS器件的方法，其中使用无水HF暴露的氮化硅作为允许将层从载体晶片转移到器件晶片的临时粘合层。

公开(公告)号：US07781305B2

公开(公告)日：2010-08-24

申请号：US12080114

申请日：2008-03-31

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体衬底的选定区域，以在所选择的深度（20）处引发衬底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，以使剩余的所述供体材料释放 部分供体基质。

公开(公告)号：US07759217B2

公开(公告)日：2010-07-20

申请号：US11627924

申请日：2007-01-26

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US20100173436A1

公开(公告)日：2010-07-08

申请号：US12651561

申请日：2010-01-04

Applicant: Luc Ouellet ,  Stephane Martel

Inventor： Luc Ouellet ,  Stephane Martel

IPC: H01L21/8238 ,  B32B3/10

CPC classification number: B81C1/00071 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0191 ,  B82Y30/00 ,  G03F7/0752 ,  G03F7/165 ,  Y10T428/24802

Abstract: A MEMS device is manufactured by first forming a self-aligned monolayer (SAM) on a carrier wafer. Next, a first polymer layer is formed on the self-aligned monolayer. The first polymer layer is patterned form a microchannel cover, which is then bonded to a patterned second polymer layer on a device wafer to form microchannels. The carrier wafer is then released from the first polymer layer.

Abstract translation: 通过首先在载体晶片上形成自对准单层（SAM）来制造MEMS器件。 接下来，在自对准单层上形成第一聚合物层。 将第一聚合物层图案化成微通道盖，然后将其与装置晶片上的图案化的第二聚合物层结合以形成微通道。 然后从第一聚合物层释放载体晶片。

公开(公告)号：US20090280602A1

公开(公告)日：2009-11-12

申请号：US12463830

申请日：2009-05-11

Applicant: Thomas Dyer BONIFIELD ,  Thomas W. WINTER ,  William R. MORRISON ,  Gregory D. WINTERTON ,  Asad M. HAIDER

Inventor： Thomas Dyer BONIFIELD ,  Thomas W. WINTER ,  William R. MORRISON ,  Gregory D. WINTERTON ,  Asad M. HAIDER

IPC: H01L21/50

CPC classification number: B81C1/0023 ,  B81B2207/096 ,  B81C2201/0191 ,  H01L21/6835 ,  H01L21/76898 ,  H01L2924/14

Abstract: A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier.

Abstract translation: 提供TSV-MEMS封装工艺。 该方法包括在形成TSV之后，在产品晶片的前侧形成TSV，并将第一载体附接到产品晶片的前侧。 该方法还包括使产品晶片的背面变薄以暴露TSV尖端，将第一载体从产品晶片的前侧分离出来，以及将薄化的晶片转移到第二载体，其背面粘附到第二晶片载体上。 将半导体部件添加到产品晶片的前侧，随后在所加入的半导体部件上形成密封腔，并从产品晶片的背面分离第二载体。 拆卸第二个承运人后，晶圆级处理继续。

公开(公告)号：US20090250249A1

公开(公告)日：2009-10-08

申请号：US12407252

申请日：2009-03-19

Applicant: Livia M. Racz ,  Gary B. Tepolt ,  Jeffrey C. Thompson ,  Thomas A. Langdo ,  Andrew J. Mueller

Inventor： Livia M. Racz ,  Gary B. Tepolt ,  Jeffrey C. Thompson ,  Thomas A. Langdo ,  Andrew J. Mueller

IPC: H05K1/11 ,  H05K1/00 ,  H05K1/16 ,  H05K3/00

CPC classification number: H01L21/486 ,  B81B2207/012 ,  B81C1/00333 ,  B81C2201/019 ,  B81C2201/0191 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L25/105 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/04105 ,  H01L2224/24227 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/92144 ,  H01L2224/9222 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  Y10T29/49124 ,  H01L2924/00

Abstract: Electronic modules and interposers are formed by encapsulating microelectronic dies and/or posts within cavities in a substrate.

Abstract translation: 电子模块和内插件通过将微电子模具和/或柱体在空腔内封装在衬底中而形成。

公开(公告)号：US20090160462A1

公开(公告)日：2009-06-25

申请号：US12342853

申请日：2008-12-23

Applicant: DIVYASIMHA HARISH

Inventor： DIVYASIMHA HARISH

IPC: G01R27/26 ,  H01G7/00

CPC classification number: H01G5/16 ,  A61M15/0068 ,  B60C23/0408 ,  B81B3/0086 ,  B81B2201/0264 ,  B81B2203/04 ,  B81C2201/019 ,  B81C2201/0191 ,  G01L1/142 ,  G01L9/0072 ,  H01G5/38 ,  Y10T29/43

Abstract: A system and methods of a microelectromechanical capacitor based device are disclosed. In one embodiment, a system of a microelectromechanical capacitive device includes a housing formed when a nonconductive material is deposited on a substrate, and a conductive plate mechanically coupled to the housing. The system further includes an additional housing coupled to the housing and an additional conductive plate that is substantially parallel to the conductive plate. The additional conductive plate is coupled to the additional conductive plate. The additional housing may be formed when an additional nonconductive material is deposited on an additional substrate. The substrate and the additional substrate may be dissolved using a chemical etching process when the housing and the additional housing are coupled.

Abstract translation: 公开了一种基于微机电电容器的装置的系统和方法。 在一个实施例中，微机电容性器件的系统包括当非导电材料沉积在衬底上时形成的壳体，以及机械耦合到壳体的导电板。 该系统还包括耦合到壳体的附加壳体和基本上平行于导电板的附加导电板。 附加导电板耦合到附加导电板。 当额外的非导电材料沉积在另外的基底上时，可以形成另外的壳体。 当壳体和附加壳体联接时，基底和附加基底可以使用化学蚀刻工艺溶解。

公开(公告)号：US20090095412A1

公开(公告)日：2009-04-16

申请号：US12155089

申请日：2008-05-29

Applicant: Zeev Abrams ,  Yael Hanein ,  Miron Hazani ,  Ori Cheshnovsky ,  Zvi Ioffe

Inventor： Zeev Abrams ,  Yael Hanein ,  Miron Hazani ,  Ori Cheshnovsky ,  Zvi Ioffe

IPC: B32B37/00 ,  B32B3/00 ,  B05D1/00

CPC classification number: C01B31/0226 ,  B32B38/0004 ,  B32B38/06 ,  B32B2309/08 ,  B81C99/009 ,  B81C2201/0191 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  G03F7/0002 ,  H01J9/025 ,  H01L51/0048 ,  H05K13/00 ,  Y10S977/842 ,  Y10S977/932 ,  Y10T428/24612 ,  Y10T428/24802

Abstract: A stamping device for stamping a nanotube network onto a target substrate is disclosed. The device comprises a template structure having a support structure formed on or attached to a substrate, and a plurality of nanotubes being supported by the support structure and engaging a plane which is spatially separated from the substrate.

Abstract translation: 公开了一种用于将纳米管网络冲压到靶基底上的冲压装置。 该装置包括具有形成在基底上或附着于基底上的支撑结构的模板结构，以及由支撑结构支撑并且与空间上与基底分离的平面接合的多个纳米管。

公开(公告)号：US07405135B2

公开(公告)日：2008-07-29

申请号：US11434930

申请日：2006-05-17

Applicant: Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

Inventor： Fabrice Letertre ,  Bruno Ghyselen ,  Olivier Rayssac

IPC: H01L29/00

CPC classification number: H01L21/187 ,  B81C1/00365 ,  B81C2201/0191 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76254

Abstract: A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

Abstract translation: 一种应力吸收微结构组件，包括具有在表面上雕刻或蚀刻的多个图案的容纳层的支撑衬底，缓冲层和成核层。 应力吸收微结构组件还可以包括缓冲层和成核层之间的绝缘层。 该组件可以在其上接收厚的外延层，同时引起这种层的破裂。

公开(公告)号：US20080108171A1

公开(公告)日：2008-05-08

申请号：US11858788

申请日：2007-09-20

Applicant: John Rogers ,  Ralph Nuzzo ,  Matthew Meitl ,  Heung Cho Ko ,  Jongseung Yoon ,  Etienne Menard ,  Alfred Baca

Inventor： John Rogers ,  Ralph Nuzzo ,  Matthew Meitl ,  Heung Cho Ko ,  Jongseung Yoon ,  Etienne Menard ,  Alfred Baca

IPC: H01L31/18 ,  H01L21/30

CPC classification number: H01L31/0735 ,  B81C1/0046 ,  B81C2201/0191 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/7813 ,  H01L29/155 ,  H01L29/20 ,  H01L31/03046 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/184 ,  H01L31/1844 ,  H01L33/0079 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T156/1195 ,  H01L2924/00

Abstract: Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Abstract translation: 提供了通过提供具有多个功能层和多个释放层的多层结构来制造器件或器件部件的方法，并且通过分离一个或多个释放层从多层结构释放功能层以产生多个 可转让结构。 可转移结构被印刷到由器件衬底支撑的器件衬底或器件部件上。 该方法和系统提供制造高质量和低成本的光伏器件，可转移的半导体结构（光电）器件和器件部件的手段。