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47 条记录 (耗时 0.016 秒)

    SELF-ALIGNED GATED EMITTER TIP ARRAYS
    43.
    发明申请
    SELF-ALIGNED GATED EMITTER TIP ARRAYS 有权
    自对准浇口发射器提升阵列

    公开(公告)号：US20140285084A1

    公开(公告)日：2014-09-25

    申请号：US14067668

    申请日：2013-10-30

    申请人： ARASH AKHAVAN FOMANI ,  LUIS FERNANDO VELASQUEZ-GARCIA ,  AKINTUNDE IBITAYO AKINWANDE

    发明人： ARASH AKHAVAN FOMANI ,  LUIS FERNANDO VELASQUEZ-GARCIA ,  AKINTUNDE IBITAYO AKINWANDE

    IPC分类号： H01J9/02 ,  H01J1/304

    CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J2201/30411 ,  H01L21/00 ,  H01T19/04 ,  H01T23/00

    摘要： Methods for fabrication of self-aligned gated tip arrays are described. The methods are performed on a multilayer structure that includes a substrate, an intermediate layer that includes a dielectric material disposed over at least a portion of the substrate, and at least one gate electrode layer disposed over at least a portion of the intermediate layer. The method includes forming a via through at least a portion of the at least one gate electrode layer. The via through the at least one gate electrode layer defines a gate aperture. The method also includes etching at least a portion of the intermediate layer proximate to the gate aperture such that an emitter structure at least partially surrounded by a trench is formed in the multilayer structure.

    摘要翻译： 描述了自对准浇口尖端阵列的制造方法。 该方法在包括衬底，包括设置在衬底的至少一部分上的电介质材料的中间层以及设置在中间层的至少一部分上的至少一个栅电极层的多层结构上进行。 该方法包括通过至少一个栅极电极层的至少一部分形成通孔。 通过至少一个栅极电极层的通孔限定栅极孔径。 该方法还包括蚀刻靠近栅极孔的中间层的至少一部分，使得在多层结构中形成至少部分被沟槽包围的发射极结构。

    ION SOURCE WITH CATHODE HAVING AN ARRAY OF NANO-SIZED PROJECTIONS
    44.
    发明申请
    ION SOURCE WITH CATHODE HAVING AN ARRAY OF NANO-SIZED PROJECTIONS 有权
    具有纳米尺寸投影阵列的阴极的离子源

    公开(公告)号：US20140183348A1

    公开(公告)日：2014-07-03

    申请号：US13728950

    申请日：2012-12-27

    申请人： SCHLUMBERGER TECHNOLOGY CORPORATION

    发明人： Jani Reijonen ,  Luke Perkins ,  Harold Pfutzner

    IPC分类号： H01J27/20 ,  G01V5/08

    CPC分类号： H01J27/205 ,  G01V5/085 ,  H01J1/3044 ,  H01J3/04 ,  H01J2201/30411

    摘要： An ion source for use in a particle accelerator includes at least one cathode. The at least one cathode has an array of nano-sized projections and an array of gates adjacent the array of nano-sized projections. The array of nano-sized projections and the array of gates have a first voltage difference such that an electric field in the cathode causes electrons to be emitted from the array of nano-sized projections and accelerated downstream. There is a ion source electrode downstream of the at least one cathode, and the at least one cathode and the ion source electrode have the same voltage applied such that the electrons enter the space encompassed by the ion source electrode, some of the electrons as they travel within the ion source electrode striking an ionizable gas to create ions.

    摘要翻译： 用于粒子加速器的离子源包括至少一个阴极。 所述至少一个阴极具有纳米尺寸突起的阵列和与纳米尺寸突起阵列相邻的栅极阵列。 纳米尺寸突起阵列和栅极阵列具有第一电压差，使得阴极中的电场使电子从纳米尺寸突起阵列发射并加速下游。 在至少一个阴极的下游存在离子源电极，并且至少一个阴极和离子源电极施加相同的电压，使得电子进入由离子源电极包围的空间中，一些电子就像它们 在离子源电极内行进进入可电离气体以产生离子。

    FIELD EMISSION ELECTRON SOURCE HAVING CARBON NANOTUBE AND MANUFACTURING METHOD THEREOF
    47.
    发明申请
    FIELD EMISSION ELECTRON SOURCE HAVING CARBON NANOTUBE AND MANUFACTURING METHOD THEREOF 有权
    具有碳纳米管的场发射电子源及其制造方法

    公开(公告)号：US20100084957A1

    公开(公告)日：2010-04-08

    申请号：US11514595

    申请日：2006-09-01

    申请人： Yang Wei ,  Liang Liu ,  Wei Wei ,  Kai-Li Jiang ,  Shou-Shan Fan

    发明人： Yang Wei ,  Liang Liu ,  Wei Wei ,  Kai-Li Jiang ,  Shou-Shan Fan

    IPC分类号： H01J1/304

    CPC分类号： H01J1/3044 ,  H01J37/073 ,  H01J37/26 ,  H01J2201/30411 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2237/06341 ,  H01J2237/28

    摘要： A field emission electron source (10) includes a conductive base (12), a carbon nanotube (14), and a film of metal (16). The conductive base includes a top (122). One end (142) of the carbon nanotube is electrically connected with the top of the conductive base. The other end (144) of the carbon nanotube extends outwardly away from the top of the conductive base. The film of metal is formed on the nearly entire surface of the carbon nanotube and at least on the portion of the top of the conductive base proximate the carbon nanotube. A method for manufacturing the described field emission electron source is also provided.

    摘要翻译： 场发射电子源（10）包括导电基底（12），碳纳米管（14）和金属薄膜（16）。 导电基底包括顶部（122）。 碳纳米管的一端（142）与导电性基材的顶部电连接。 碳纳米管的另一端（144）向外远离导电基底的顶部。 金属膜形成在碳纳米管的几乎整个表面上，并且至少在靠近碳纳米管的导电基底顶部的部分上形成。 还提供了一种用于制造所述场致发射电子源的方法。