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    Gain-coupled distributed feedback semiconductor laser device and production method therefor
    42.
    发明授权
    Gain-coupled distributed feedback semiconductor laser device and production method therefor 失效
    增益耦合分布反馈半导体激光器件及其制作方法

    公开(公告)号：US07016391B2

    公开(公告)日：2006-03-21

    申请号：US10221363

    申请日：2001-02-07

    Applicant: Koji Takahashi

    Inventor： Koji Takahashi

    IPC: H01S3/08 ,  H01S5/00

    CPC classification number: B82Y20/00 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/3202 ,  H01S5/32366 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3432 ,  H01S5/3434 ,  H01S5/34346 ,  H01S5/3438

    Abstract: The presence or absence and the intensity of refractive index distribution are easily controlled with high reproducibility without depending on the fabricating process accuracy. InGaAs well layers (14a) and (14b), which have a narrow bandgap and a high refractive index, are enclosed by a lower barrier layer (13), an intermediate barrier layer (15), an upper barrier layer (16) and a buried layer (18) of GaAsN-based materials of a wide bandgap. Then, by adjusting the nitrogen crystal mixture ratio of the GaAsN-based materials that constitute the barrier layers (13), (15) and (16) and the buried layer (18), the presence or absence and the intensity of the refractive index distribution are controlled. Thus, the refractive index distribution is easily controlled with high reproducibility without considering the configuration of a diffraction grating (17), a refractive index balance with respect to the buried layer (18) and so on, i.e., without depending on the fabricating process accuracy.

    Abstract translation: 折射率分布的存在或不存在和强度易于以高再现性进行控制，而不依赖于制造工艺的精度。 具有窄带隙和高折射率的InGaAs阱层（14a）和（14b）被下阻挡层（13），中间阻挡层（15），上阻挡层（16）， 以及宽带隙的GaAsN基材料的掩埋层（18）。 然后，通过调整构成阻挡层（13），（15）和（16）和掩埋层（18）的GaAsN基材料的氮结晶混合比，折射率的存在或不存在和强度 分配受到控制。 因此，不考虑衍射光栅（17）的构造，相对于掩埋层（18）的折射率平衡等，即不依赖于制造工艺精度，可以以高再现性容易地控制折射率分布 。

    Method for manufacturing gratings in semiconductor materials that readily oxidise
    44.
    发明申请
    Method for manufacturing gratings in semiconductor materials that readily oxidise 审中-公开
    用于制造易于氧化的半导体材料中的光栅的方法

    公开(公告)号：US20050208768A1

    公开(公告)日：2005-09-22

    申请号：US10978632

    申请日：2004-11-01

    Applicant: Richard Finlay ,  D. Knight ,  Darren Goodchild ,  Karin Hinzer

    Inventor： Richard Finlay ,  D. Knight ,  Darren Goodchild ,  Karin Hinzer

    IPC: B44C1/22 ,  G02B5/18 ,  H01L21/302 ,  H01L21/308 ,  H01S5/12 ,  H01S5/20

    CPC classification number: G02B5/1857 ,  H01L21/3083 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/2081 ,  H01S2301/173

    Abstract: The present invention is a combination of in-situ etching with a grating mask pattern comprised only of semiconductor material, together with the fabrication of a protective layer beneath the semiconductor grating mask that protects the semiconductor material that readily oxidises. As such the present invention is based on a two-stage process. First the grating pattern is defined in a semiconductor material, wherein this pattern is called the semiconductor grating mask. The semiconductor grating mask sits on top of a layer of protective material, which in turn is on top of the semiconductor material that readily oxidises, wherein the protective layer prevents oxidation of the material below. The semiconductor structure is then moved to a reactor, where, in the second stage, the mask pattern is transferred into the underlying protective layer and the semiconductor material that readily oxidises, by in-situ etching. The grating is then overgrown in the same reactor without exposing the etched grating to the atmosphere. The overgrown material protects the underlying semiconductor material from oxidation when the structure is removed from the reactor.

    Abstract translation: 本发明是原位蚀刻与仅由半导体材料组成的光栅掩模图案的组合，以及在半导体光栅掩模下面制造保护半导体材料的保护层，其保护易于氧化。 因此，本发明基于两阶段过程。 首先，光栅图案被限定在半导体材料中，其中该图案被称为半导体光栅掩模。 半导体光栅掩模位于保护材料层的顶部，保护材料层又在容易氧化的半导体材料的顶部上，其中保护层防止材料在下面被氧化。 然后将半导体结构移动到反应器中，其中在第二阶段中，通过原位蚀刻将掩模图案转移到下面的保护层和容易氧化的半导体材料。 然后光栅在相同的反应器中过度生长，而不会将蚀刻的光栅暴露在大气中。 当结构从反应器中移除时，杂色成长的材料保护下面的半导体材料免于氧化。

    Wavelength tunable laser and method of formation
    48.
    发明授权
    Wavelength tunable laser and method of formation 有权
    波长可调激光器和形成方法

    公开(公告)号：US06862394B2

    公开(公告)日：2005-03-01

    申请号：US10036437

    申请日：2002-01-07

    Applicant: David A. Ackerman ,  John E. Johnson ,  David V. Lang ,  C. Lewis Reynolds, Jr.

    Inventor： David A. Ackerman ,  John E. Johnson ,  David V. Lang ,  C. Lewis Reynolds, Jr.

    IPC: G02B6/12 ,  H01S5/0625 ,  H01S5/12 ,  G02B6/10

    CPC classification number: H01S5/06255 ,  G02B2006/12107 ,  G02B2006/12121 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/1228

    Abstract: A method of increasing the monomolecular recombination and the immunity to noise of a continuously tunable laser is disclosed. A concentration of recombination centers in the range of about 1×1016 cm−3 to about 1×1018 cm−3 in the tuning region of the laser device is achieved by doping the waveguide layer with impurity atoms, by irradiating the waveguide layer with high energy particles or by varying the growth conditions of the waveguide layer to introduce native point defects due to lattice mismatch. This way, the monomolecular recombination is increased and the radiative recombination over low current ranges is reduced. By increasing the monomolecular recombination, the immunity to noise is improved but the tuning efficiency is reduced. Nevertheless, only a minimal effect on the tuning efficiency is noted over high current ranges and, therefore, the overall tuning range is only insignificantly changed.

    Abstract translation: 公开了增加连续可调激光器的单分子重组和抗噪声的方法。 在激光器件的调谐区域中，在约1×10 16 cm -3至约1×10 18 cm -3范围内的复合中心浓度通过用杂质原子掺杂波导层来实现，通过 用高能粒子照射波导层，或通过改变波导层的生长条件来引入由于晶格失配引起的自然点缺陷。 这样，单分子重组增加，并且在低电流范围内的辐射复合减少。 通过增加单分子重组，提高了对噪声的抗扰性，但调谐效率降低。 然而，在高电流范围内仅注意到对调谐效率的最小影响，因此整体调谐范围只有微不足道的变化。

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