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    SILICON CARBIDE SUBSTRATE PRODUCTION METHOD AND SILICON CARBIDE SUBSTRATE
    42.
    发明申请
    SILICON CARBIDE SUBSTRATE PRODUCTION METHOD AND SILICON CARBIDE SUBSTRATE 审中-公开

    公开(公告)号：US20190382918A1

    公开(公告)日：2019-12-19

    申请号：US16489814

    申请日：2018-03-01

    申请人： Shin-Etsu Chemical Co., Ltd. ,  CUSIC Inc.

    发明人： Hiroyuki Nagasawa ,  Yoshihiro Kubota ,  Shoji Akiyama

    IPC分类号： C30B29/36 ,  H01L21/02 ,  H01L21/683 ,  H01L29/16 ,  C30B25/18 ,  C30B33/10

    摘要： A silicon carbide substrate production method includes: the step of providing covering layers 1b, 1b, each containing silicon oxide, silicon nitride, silicon carbonitride, or silicide, respectively on both surfaces of a base material substrate 1a carbon, silicon or silicon carbide, and turning the surface of each of the covering layers 1b, 1b into a smooth surface to prepare a support substrate 1; a step of forming a polycrystalline silicon carbide film 10 on both surfaces of the support substrate 1 by a gas phase growth method or a liquid phase growth method; and a step of separating the polycrystalline silicon carbide films from the support substrate while preserving, on the surface thereof, the smoothness of the covering layer surfaces 1b, 1b by chemically removing at least the covering layers 1b, 1b, from the support substrate 1. The silicon carbide substrate has a smooth surface and reduced internal stress.

    Sapphire substrate recycling method
    43.
    发明授权
    Sapphire substrate recycling method 有权

    公开(公告)号：US10283346B2

    公开(公告)日：2019-05-07

    申请号：US15450355

    申请日：2017-03-06

    申请人： ENRAYTEK OPTOELECTRONICS CO., LTD.

    发明人： Houyong Ma ,  Jing Ju ,  Zhengzhang You ,  Qiming Li ,  Jingchao Xie

    IPC分类号： H01L21/02 ,  C30B33/02 ,  C30B29/20 ,  C30B33/10 ,  B08B3/08 ,  B08B7/00 ,  B08B7/04

    摘要： A method for recycling a sapphire substrate is disclosed. The method includes the steps of: high-temperature baking, wherein an intact epitaxial wafer to be scrapped is placed and baked in a baking oven at a high temperature of from 600° C. to 1000° C., and wherein the epitaxial wafer contains the sapphire substrate; and high-temperature rinsing in a concentrated acid, wherein the baked epitaxial wafer is then rinsed in the concentrated acid having a concentration ranging from 60% to 99% at a high temperature of from 160° C. to 300° C. The method can be used for recycling both patterned and smooth sapphire substrates.

    OFF-AXIS EPITAXIAL LIFT PROCESS
    45.
    发明申请
    OFF-AXIS EPITAXIAL LIFT PROCESS 审中-公开

    公开(公告)号：US20180209018A1

    公开(公告)日：2018-07-26

    申请号：US15934409

    申请日：2018-03-23

    申请人： ALTA DEVICES, INC.

    发明人： Thomas GMITTER ,  Gang HE ,  Melissa ARCHER ,  Siew NEO

    IPC分类号： C22C29/00 ,  C30B33/06 ,  C30B33/08 ,  C30B29/00 ,  C30B29/42 ,  C30B29/40 ,  C30B33/10

    CPC分类号： C22C29/00 ,  C30B29/00 ,  C30B29/40 ,  C30B29/42 ,  C30B33/06 ,  C30B33/08 ,  C30B33/10

    摘要： Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (ELO) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the ELO process. The off-axis orientation of the edge surface provides an additional variable for controlling the etch rate during the ELO process and therefore the etch front may be modulated to prevent the formation of high stress points which reduces or prevents stressing and cracking the epitaxial film stack. In one embodiment, the growth wafer is rectangular and has an edge surface with an off-axis orientation rotated by an angle greater than 0° and up to 90° relative to an edge orientation of at 0°.