FREQUENCY SYNTHESIZER AND METHOD CONTROLLING FREQUENCY SYNTHESIZER
    51.
    发明申请
    FREQUENCY SYNTHESIZER AND METHOD CONTROLLING FREQUENCY SYNTHESIZER 有权
    频率合成器和控制频率合成器的方法

    公开(公告)号:US20160197601A1

    公开(公告)日:2016-07-07

    申请号:US14974333

    申请日:2015-12-18

    Abstract: A voltage controlled oscillator (VCO) in a frequency synthesizer generates an output signal having a target frequency by being coarse tuned in accordance with a channel code derived through a binary tree search. Thereafter, the output signal of the VCO may be further tuned using a phase lock loop (PLL) circuit. Each stage of the binary tree search includes a comparison step that determines a channel code bit, and another step that confirms that the channel code converges to a final channel code within an established stage range value.

    Abstract translation: 频率合成器中的压控振荡器(VCO)通过根据通过二叉树搜索导出的信道码进行粗调而产生具有目标频率的输出信号。 此后,可以使用锁相环(PLL)电路进一步调谐VCO的输出信号。 二叉树搜索的每个阶段包括确定信道码位的比较步骤,以及确认信道码收敛到已建立的阶段范围值内的最终信道码的另一步骤。

    Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus having heater
    53.
    发明授权
    Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus having heater 有权
    使用激光剥离技术制造发光二极管的方法和具有加热器的激光剥离装置

    公开(公告)号:US08624159B2

    公开(公告)日:2014-01-07

    申请号:US13410884

    申请日:2012-03-02

    CPC classification number: H01L33/0079

    Abstract: An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.

    Abstract translation: 提供了一种使用激光剥离装置制造发光二极管的方法。 该方法包括在第一衬底上生长包括第一导电型化合物半导体层,有源层和第二导电型化合物半导体层的外延层,将具有不同于第一衬底的热膨胀系数不同的第二衬底 衬底,在第一衬底的高于室温的第一温度下到外延层,并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离 温度不高于第一温度。

    High efficiency light emitting diode

    公开(公告)号:US08410506B2

    公开(公告)日:2013-04-02

    申请号:US13077371

    申请日:2011-03-31

    CPC classification number: H01L33/22 H01L33/20 H01L33/382

    Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.

    Wideband receiver
    55.
    发明授权
    Wideband receiver 有权
    宽带接收机

    公开(公告)号:US08306498B2

    公开(公告)日:2012-11-06

    申请号:US12970874

    申请日:2010-12-16

    CPC classification number: H04B1/28 H03D7/1441 H03D7/1458

    Abstract: Provided is a wideband receiver that has a smaller area and consumes less power and can prevent harmonic mixing occurring due to an increase in the number of communications systems using wideband. A wideband receiver according to an aspect of the invention may include: an front-end unit receiving and performing low-pass filtering on a wideband input signal in a continuous-time domain; and a down-conversion unit sampling and holding an output signal of the front-end unit according to a local oscillator signal and performing low-pass filtering on the output signal in a discrete tie domain.

    Abstract translation: 提供了一种宽带接收机,其具有较小的面积并且消耗更少的功率,并且可以防止由于使用宽带的通信系统的数量的增加而发生谐波混合。 根据本发明的一个方面的宽带接收机可以包括:前端单元在连续时域中接收并对宽带输入信号执行低通滤波; 下变频单元根据本地振荡器信号对前端单元的输出信号进行采样和保持,并对离散的连接域中的输出信号进行低通滤波。

    CORONA DISCHARGE-RESISTANT INSULATING VARNISH COMPOSITION AND INSULATED WIRE HAVING INSULATED LAYER FORMED THEREFROM
    57.
    发明申请
    CORONA DISCHARGE-RESISTANT INSULATING VARNISH COMPOSITION AND INSULATED WIRE HAVING INSULATED LAYER FORMED THEREFROM 审中-公开
    具有绝缘层的CORONA耐电绝缘组合物和绝缘线

    公开(公告)号:US20120234575A1

    公开(公告)日:2012-09-20

    申请号:US13413695

    申请日:2012-03-07

    Abstract: Disclosed is an insulating varnish composition including an organo silica sol containing a silica covered with a dispersant in a solvent containing N-methyl-2-pyrrolidone (NMP) as a main component and a polyamidimide resin dispersed in a solvent containing NMP as a main component. An insulated layer formed from the insulating varnish composition containing inorganic insulating particles of silica uniformly dispersed therein may have excellent corona discharge resistance, thereby preventing the insulation breakdown.

    Abstract translation: 公开了一种绝缘漆组合物,其包含在含有以N-甲基-2-吡咯烷酮(NMP)为主要成分的溶剂中含有分散剂覆盖的二氧化硅的有机二氧化硅溶胶和分散在含有NMP作为主要成分的溶剂中的聚酰胺酰亚胺树脂 。 由包含均匀分散在其中的二氧化硅的无机绝缘颗粒的绝缘漆组合物形成的绝缘层可以具有优异的电晕放电电阻,从而防止绝缘击穿。

    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    59.
    发明申请
    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
    高效发光二极管及其制造方法

    公开(公告)号:US20120119243A1

    公开(公告)日:2012-05-17

    申请号:US13109669

    申请日:2011-05-17

    Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

    Abstract translation: 本发明的示例性实施例涉及一种高效率发光二极管(LED)。 根据示例性实施例的LED包括衬底,布置在衬底上的半导体堆叠,其中半导体堆叠具有p型半导体层,有源层和n型半导体层,插入在衬底之间的第一金属层 半导体堆叠,与半导体堆叠欧姆接触的第一金属层,布置在半导体堆叠上的第一电极焊盘,从第一电极焊盘延伸的电极延伸部,其中电极延伸部具有接触n型 半导体层,插入在所述基板和所述半导体堆叠之间的第一绝缘层,其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域,以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。

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