公开(公告)号：US20250037978A1

公开(公告)日：2025-01-30

申请号：US18225454

申请日：2023-07-24

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Chaowei Wang ,  Kevin Griffin ,  Kenneth Brian Doering ,  Hanhong Chen ,  Joseph AuBuchon

IPC: H01J37/32 ,  H01L21/67

Abstract: Gas distribution assemblies for semiconductor devices are described. The gas distribution assemblies include a backplate, a faceplate, a counterbored hole, and at least one orifice. The at least one orifice includes, for example, at least one straight orifice, or at least two angled orifices. Some embodiments of the gas distribution assemblies provide for reduced plasma damage in a processing chamber. Some embodiments of the gas distribution assemblies provide for reduced jetting on a substrate in a processing chamber. Methods of reducing plasma damage in gas distribution assemblies are also described.

公开(公告)号：US20240371613A1

公开(公告)日：2024-11-07

申请号：US18654221

申请日：2024-05-03

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Janisht Golcha ,  Sanjeev Baluja ,  Srinivas Gandikota ,  Yixiong Yang

IPC: H01J37/32 ,  C23C16/455

Abstract: Semiconductor manufacturing processing chambers having an RF isolator between the support ring and the showerhead and/or an RF gasket between the showerhead and the gas funnel are described. A cap insert with a cap housing around the cap insert is on the gas funnel and an RF feed is in contact with the showerhead. A substrate support can be included and may have an RF return path directed through the substrate support.

公开(公告)号：US12060638B2

公开(公告)日：2024-08-13

申请号：US17120186

申请日：2020-12-13

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Ashutosh Agarwal

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4412 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/68764

Abstract: Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

公开(公告)号：USD1037778S1

公开(公告)日：2024-08-06

申请号：US29846787

申请日：2022-07-19

Applicant: Applied Materials, Inc.

Designer： Ashutosh Agarwal ,  Eric J. Hoffmann ,  Dhritiman Subha Kashyap ,  Kartik Shah ,  Amit Rajendra Sherekar ,  Sanjeev Baluja

Abstract: FIG. 1 is a top-front isometric view of our new design for a gas distribution plate;
FIG. 2 is a top-rear isometric view of the gas distribution plate of FIG. 1;
FIG. 3 is a front view of the gas distribution plate of FIG. 1;
FIG. 4 is a rear view of the gas distribution plate of FIG. 1;
FIG. 5 is a left side view of the gas distribution plate of FIG. 1;
FIG. 6 is a right side view of the gas distribution plate of FIG. 1;
FIG. 7 is a top view of the gas distribution plate of FIG. 1; and,
FIG. 8 is a bottom view of the gas distribution plate of FIG. 1.
The portions of the gas distribution plate shown in broken line form no part of the claimed design.

公开(公告)号：US12020957B2

公开(公告)日：2024-06-25

申请号：US17008588

申请日：2020-08-31

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Tejas Ulavi ,  Sanjeev Baluja

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/46 ,  F27D5/00 ,  H01L21/687 ,  H05B3/22

CPC classification number: H01L21/67103 ,  C23C16/45544 ,  C23C16/46 ,  F27D5/0037 ,  H01L21/68771 ,  H05B3/22

Abstract: A heater assembly having a top seal and a second seal configured to account for deviation in processing heights and motor runoff of a heater standoff. The top seal is positioned between a shield plate and a top plate and the bottom seal is positioned between a heater mounting base and the heater standoff.

公开(公告)号：US11791136B2

公开(公告)日：2023-10-17

申请号：US17240695

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Yi Yang ,  Truong Nguyen ,  Nattaworn Boss Nunta ,  Joseph F. Aubuchon ,  Tuan Anh Nguyen ,  Karthik Janakiraman

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44 ,  C23C16/509

CPC classification number: H01J37/32449 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4557 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32522 ,  C23C16/45574 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate, a central opening in fluid communication with the central gas channel, and a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.

公开(公告)号：US11746417B2

公开(公告)日：2023-09-05

申请号：US17948323

申请日：2022-09-20

Applicant: Applied Materials, Inc.

Inventor： Ashutosh Agarwal ,  Sanjeev Baluja

IPC: C23C16/40 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45544 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32357

Abstract: Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of the second inlet line separates the first inlet line from the second inlet line preventing fluid communication between the first inlet line and the second inlet line.

公开(公告)号：US20230207345A1

公开(公告)日：2023-06-29

申请号：US17561085

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Mario D. Silvetti ,  Michael Jerry Duret ,  Sanjeev Baluja ,  Satish Radhakrishnan ,  Yuan Xiaoxiong

IPC: H01L21/67 ,  B23Q1/03

CPC classification number: H01L21/67103 ,  B23Q1/032

Abstract: Embodiments of the disclosure advantageously provide base plates with decreased metal contamination. Some embodiments of the disclosure advantageously provide base plates with increased edge purge channel uniformity. Some embodiments provide methods of forming base plates. Embodiments of the disclose are directed to a heater pedestal configured to support a substrate during processing. In some embodiments, the heater pedestal includes the base plate described herein.

公开(公告)号：US20230175131A1

公开(公告)日：2023-06-08

申请号：US18103812

申请日：2023-01-31

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Uday Pai ,  Timothy J. Roggenbuck ,  Sanjeev Baluja ,  Kalesh Panchaxari Karadi ,  Tejas Ulavi

IPC: H05K5/02 ,  H02G3/04 ,  C23C16/458 ,  C23C16/455

CPC classification number: H05K5/0247 ,  H02G3/0437 ,  C23C16/4588 ,  C23C16/45544 ,  C23C16/4586

Abstract: Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.

公开(公告)号：US11599069B1

公开(公告)日：2023-03-07

申请号：US17467020

申请日：2021-09-03

Applicant: Applied Materials, Inc.

Inventor： Mauro Cimino ,  Arkaprava Dan ,  Sanjeev Baluja

IPC: G05B13/02 ,  H01L21/67

Abstract: Embodiments disclosed herein include a method for auto-tuning a system. In an embodiment, the method comprises determining if the system is in a steady state. Thereafter, the method includes exciting the system. In an embodiment, the method comprises storing process feedback measurements from the excited system to provide a set of stored data. In an embodiment, the set of stored data is a subset of all available data generated by the excited system. In an embodiment, the method further comprises determining when the excited system returns to the steady state, and tuning the system using the set of stored data.