公开(公告)号：US20050167677A1

公开(公告)日：2005-08-04

申请号：US11097732

申请日：2005-03-31

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/15

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US06924500B2

公开(公告)日：2005-08-02

申请号：US10062687

申请日：2002-01-30

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/20 ,  H01L31/036

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

摘要翻译： 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US20050145859A1

公开(公告)日：2005-07-07

申请号：US11066699

申请日：2005-02-24

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L27/15

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US06870190B2

公开(公告)日：2005-03-22

申请号：US10092687

申请日：2002-03-06

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Masaru Minami

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Masaru Minami

IPC分类号： G09F9/33 ,  G09F9/46 ,  H01L27/15 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01L33/44 ,  H01L33/58 ,  H01S5/323 ,  H01S5/40

CPC分类号： H01L27/156 ,  H01L33/24 ,  H01L2221/68368 ,  H01L2224/24226 ,  H01L2924/01004 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/1301 ,  H01S5/32341 ,  H01S5/4056 ,  H01L2924/00

摘要： A display unit and semiconductor light emitting devices are provided. The display unit includes a number of the semiconductor light emitting devices arrayed on a base body, wherein each of the semiconductor light emitting devices is formed together with dummy devices for setting an emission wavelength of the semiconductor light emitting device, and the semiconductor light emitting device is formed by selective growth, and one conductive layer is formed in self-alignment on planes grown from tilt planes formed by selective growth. Such a display unit has a structure suitable for multi-colors without increasing the number of production steps.

摘要翻译： 提供显示单元和半导体发光器件。 显示单元包括排列在基体上的多个半导体发光器件，其中每个半导体发光器件与用于设置半导体发光器件的发射波长的伪器件一起形成，并且半导体发光器件 通过选择性生长形成，并且在由通过选择性生长形成的倾斜平面生长的平面上以自对准形成一个导电层。 这种显示单元具有适合于多种颜色的结构，而不增加制作步骤的数量。

公开(公告)号：US06831300B2

公开(公告)日：2004-12-14

申请号：US10258157

申请日：2003-05-07

申请人： Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Toyoharu Oohata

发明人： Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa ,  Toyoharu Oohata

IPC分类号： H01L2922

CPC分类号： H01L33/405 ,  H01L33/32

摘要： In a semiconductor light emitting device configured to extract light through a substrate thereof, an electrode layer is formed on a p-type semiconductor layer (such as p-type GaN layer) formed on an active layer, and a nickel layer is formed as a contact metal layer between the electrode layer and the p-type semiconductor layer and adjusted in thickness not to exceed the intrusion length of light generated in the active layer. Since the nickel layer is sufficiently thin, reflection efficiency can be enhanced.

摘要翻译： 在被配置为通过其基板提取光的半导体发光器件中，在形成于有源层上的p型半导体层（例如p型GaN层）上形成电极层，并且形成镍层作为 电极层和p型半导体层之间的接触金属层的厚度不超过有源层中产生的光的侵入长度。 由于镍层足够薄，因此可以提高反射效率。

公开(公告)号：US06818465B2

公开(公告)日：2004-11-16

申请号：US10415010

申请日：2003-04-22

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： H01L2100

CPC分类号： H01L33/24 ,  H01L33/32 ,  H01S5/042 ,  H01S5/10 ,  H01S5/2272 ,  H01S5/3203 ,  H01S5/32341 ,  H01S2304/12

摘要： Nitride semiconductor devices and methods of fabricating same are provided. The nitride semiconductor device includes a crystal layer grown into a three-dimensional shape having a side surface portion and an upper layer portion, wherein an electrode layer is formed on the upper layer portion via a high resistance region formed by an undoped gallium nitride layer or the like. Since the high resistance region is provided on the upper layer portion, a current flows so as to bypass the high resistance region of the upper layer portion, to form a current path extending mainly or substantially along the side surface portion while avoiding the upper layer portion, thereby suppressing the flow of a current in the upper layer portion poor in crystallinity.

摘要翻译： 提供氮化物半导体器件及其制造方法。 氮化物半导体器件包括生长成具有侧表面部分和上层部分的三维形状的晶体层，其中电极层通过由未掺杂的氮化镓层形成的高电阻区域形成在上层部分上，或 类似。 由于高电阻区域设置在上层部分上，电流流过以绕过上层部分的高电阻区域，以形成主要或基本上沿着侧表面部分延伸的电流路径，同时避免上层部分 从而抑制上层部分的结晶性差的电流流动。

公开(公告)号：US06576571B2

公开(公告)日：2003-06-10

申请号：US09918840

申请日：2001-07-31

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： H01L2131

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Disclosed herein is a process for vapor phase growth of gallium nitride compound semiconductor which yields uniform crystal layers with good reproducibility. The process comprises forming a first nitride semiconductor layer on a substrate, forming thereon a protective film for crystal growth prevention in such a way that it has partly open window regions through which the first nitride semiconductor layer is exposed, forming a second nitride semiconductor layer by selective growth from the first nitride semiconductor layer at a crystal growth starting temperature, and continuing crystal growth at a temperature higher than the crystal growth starting temperature. The vapor phase growth at a low temperature yields a uniform crystal layer, and the ensuing vapor phase growth at a raised temperature yields a uniform crystal layer with good reproducibility in conformity with the first crystal layer.

公开(公告)号：US07888690B2

公开(公告)日：2011-02-15

申请号：US12034415

申请日：2008-02-20

申请人： Toshiaki Iwafuchi ,  Toyoharu Oohata ,  Masato Doi

发明人： Toshiaki Iwafuchi ,  Toyoharu Oohata ,  Masato Doi

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/16 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L25/0753 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3512 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/05599

摘要： An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

摘要翻译： 一种图像显示单元和图像显示单元的制造方法，其中，所述图像显示单元包括用于显示图像的多个发光装置的阵列，并且其中，所述图像显示单元的制造方法采用例如 空间膨胀转移，其中第一转移步骤包括将排列在第一衬底上的器件转移到临时保持构件，使得器件彼此间隔开，间距大于排列在第一衬底上的器件的间距， 保持步骤包括将设备保持在临时保持构件上，第三传送步骤包括将保持在临时保持构件上的设备转移到第二板上，使得设备彼此间隔开，间距大于设备的间距 举行临时控股成员。

公开(公告)号：US06831937B2

公开(公告)日：2004-12-14

申请号：US10210382

申请日：2002-07-31

申请人： Masato Doi ,  Toyoharu Oohata

发明人： Masato Doi ,  Toyoharu Oohata

IPC分类号： H01S500

CPC分类号： H01S5/2201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0422 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173

摘要： A method of fabricating a semiconductor laser device includes the steps of forming semiconductor layers composed of a first conductive type cladding layer, an active layer, and a second conductive type cladding layer on a substrate, and peeling a device formation region of the semiconductor layers from the substrate and simultaneously forming a resonance mirror on an end portion of the device formation region by irradiating the device formation region with energy beams traveling from the back surface side of the substrate. With this configuration, it is possible to peel a device from a substrate and also form a flat resonance mirror with less damage of crystal by laser abrasion, and further to easily form a high quality resonance mirror without increasing the number of fabrication steps.

摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：在衬底上形成由第一导电型包覆层，有源层和第二导电型包覆层构成的半导体层，并将半导体层的器件形成区域从 并且通过从衬底的背面侧行进的能量束照射器件形成区域，同时在器件形成区域的端部上形成共振反射镜。 通过这种构造，可以从基板剥离器件，并且还可以通过激光磨损形成具有较少的晶体损伤的平坦共振镜，并且进一步容易地形成高质量的谐振镜而不增加制造步骤的数量。

公开(公告)号：US08409886B2

公开(公告)日：2013-04-02

申请号：US11558620

申请日：2006-11-10

申请人： Toshiaki Iwafuchi ,  Toyoharu Oohata ,  Masato Doi

发明人： Toshiaki Iwafuchi ,  Toyoharu Oohata ,  Masato Doi

IPC分类号： H01L21/00

CPC分类号： H01L33/24 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/16 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L25/0753 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3512 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/05599

摘要： A method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

摘要翻译： 一种制造图像显示单元的方法，其中图像显示单元包括用于显示图像的多个发光装置的阵列，并且其中制造图像显示单元的方法采用例如空间扩展传送，由此 第一转移步骤包括将排列在第一衬底上的器件转移到临时保持构件，使得器件彼此间隔开，间距大于排列在第一衬底上的器件的间距，间距保持步骤包括： 临时保持构件上的装置和第三转移步骤包括将保持在临时保持构件上的装置转移到第二板上，使得装置彼此间隔开，间距大于保持在临时保持构件上的装置的间距 会员。