公开(公告)号：US06720037B2

公开(公告)日：2004-04-13

申请号：US09949616

申请日：2001-09-12

申请人： Yukito Aota ,  Masahiro Kanai

发明人： Yukito Aota ,  Masahiro Kanai

IPC分类号： H05H146

CPC分类号： H01J37/32532 ,  C23C16/515

摘要： In a plasma processing method, on a back side of a cathode electrode is provided at least one conductor plate d.c. potentially insulated from the cathode electrode and an opposing electrode, and the cathode electrode and the conductor plate are enclosed with a shielding wall such that a ratio of an inter-electrode coupling capacitance provided by the cathode electrode and the opposing electrode to a coupling capacitance provided by the cathode electrode and a bottom surface of the shielding wall on the back side of the conductor plate is not less than a predetermined value. Thereby, a high-quality, high-speed plasma processing is realized.

摘要翻译： 在等离子体处理方法中，在阴极电极的背面设置有至少一个导体板d.c. 可能与阴极电极和对置电极绝缘，并且阴极电极和导体板被屏蔽壁包围，使得由阴极电极和相对电极提供的电极间耦合电容与提供的耦合电容的比率 通过阴极电极和导体板背侧的屏蔽壁的底面不小于预定值。 由此，实现了高质量的高速等离子体处理。

公开(公告)号：US06482668B2

公开(公告)日：2002-11-19

申请号：US09260044

申请日：1999-03-02

申请人： Naoto Okada ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori

发明人： Naoto Okada ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori

IPC分类号： H01L2100

CPC分类号： H01L31/1824 ,  H01L31/1816 ,  Y02E10/545 ,  Y02P70/521

摘要： In the step of forming a microcrystalline i-type semiconductor layer by high-frequency plasma CVD, wherein an area of the parallel-plate electrode is represented by S; a width of the discharge space in its direction perpendicular to the transport direction of the belt-like substrate, by Ws; a width of a region formed by the parallel-plate electrode together with its surrounding insulating region, in its direction perpendicular to the transport direction of the belt-like substrate, by Wc; a width of the belt-like substrate in the direction perpendicular to its transport, by Wk; a distance between the parallel-plate electrode and the belt-like substrate, by h; a power density at which crystal fraction begins to saturate at predetermined substrate temperature, material gas flow rate and pressure, by Pd; and a high-frequency power, by P, 2h/(Ws−Wc)≧2.5, (Ws/h)×2(Ws−Wk)/[4h+(Ws−Wc) ]≧10, and P≧(10/8)×Pd×S. A microcrystalline semiconductor layer having lower characteristics distribution in the width direction of a belt-like substrate result, and photovoltaic devices having uniform photoelectric conversion efficiency can be mass-produced by a roll-to-roll system.

摘要翻译： 在通过高频等离子体CVD形成微晶i型半导体层的步骤中，平行板电极的面积由S表示; 放电空间在与带状衬底的输送方向垂直的方向上的宽度Ws; 由平行板电极与其周围的绝缘区域在垂直于带状衬底的输送方向的方向上形成的区域的宽度为Wc; 带状基板在与其运输方向垂直的方向上的宽度W k; 平行板电极和带状衬底之间的距离h; 通过Pd在晶体部分在预定的衬底温度，材料气体流速和压力下开始饱和的功率密度; 和高频功率，通过P，在带状衬底的宽度方向上具有较低特性分布的微晶半导体层，并且可以通过卷对卷大规模生产具有均匀光电转换效率的光电器件 系统。

公开(公告)号：US06470823B2

公开(公告)日：2002-10-29

申请号：US09771650

申请日：2001-01-30

申请人： Takahiro Yajima ,  Masahiro Kanai ,  Yuzo Koda ,  Takeshi Shishido

发明人： Takahiro Yajima ,  Masahiro Kanai ,  Yuzo Koda ,  Takeshi Shishido

IPC分类号： C23C1600

CPC分类号： H01J37/32009 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32532

摘要： A film-forming apparatus comprising a vacuum chamber, a power application electrode, a raw material gas introduction portion through which a raw material gas is introduced into the vacuum chamber, and an exhaustion portion through which the vacuum chamber is exhausted, the power application electrode being arranged so as to oppose a substrate for film formation positioned in the vacuum chamber, characterized in that at least said raw material gas introduction portion or the exhaustion portion is provided with an opening adjusting member having a desired thickness for intercepting the plasma, and the power application electrode and the opening adjusting member are arranged to satisfy an equation a or c≧b, with a being a shortest distance between the power application electrode and the opening adjusting member provided at the raw material gas introduction portion, c being a shortest distance between the power application electrode and the opening adjusting member provided at the exhaustion portion, and b being an average distance between the substrate and a horizontal plane face of the power application electrode which is opposed to a face of the substrate.

摘要翻译： 一种成膜设备，包括真空室，电力施加电极，原料气体引入到真空室中的原料气体引入部分和真空室排出的排气部分，电力施加电极 被布置成与位于真空室中的成膜用基板相对，其特征在于，至少所述原料气体导入部或者所述排气部设置有用于截取等离子体的期望厚度的开口调节部件， 电力施加电极和开口调整构件被布置成满足等式a或c> = b，其中电源施加电极和设置在原料气体导入部分的开口调节构件之间的距离最短，c是最短的 电力施加电极和设置在排气口处的开口调节构件之间的距离 离子部分，b是与基板的表面相对的电力施加电极的基板与水平面面之间的平均距离。

公开(公告)号：US06367502B1

公开(公告)日：2002-04-09

申请号：US09666182

申请日：2000-09-21

申请人： Masahiro Kanai ,  Etsumi Nagaya

发明人： Masahiro Kanai ,  Etsumi Nagaya

IPC分类号： F16K3500

CPC分类号： A61M5/141 ,  A61M5/152 ,  A61M5/16877 ,  A61M2209/04 ,  Y10T137/7069 ,  Y10T137/8275 ,  Y10T137/87708

摘要： A flow control device has a body (41), a plurality of elastic flow control tube (51-54) provided in the body (41), a single fluid path (55) in communication with the flow control tube (51-54), a slider (56) slidable relative to the body (41), and a valve mechanism (71) for selectively pressing and shutting the flow control tube (51-54) in accordance with a slide position of the slider (56).

摘要翻译： 流量控制装置具有本体（41），设置在主体（41）中的多个弹性流量控制管（51-54），与流量控制管（51-54）连通的单个流体路径（55） 相对于主体（41）滑动的滑块（56）和用于根据滑块（56）的滑动位置选择性地按压和关闭流量控制管（51-54）的阀机构（71）。

公开(公告)号：US06312411B1

公开(公告)日：2001-11-06

申请号：US09425169

申请日：1999-10-22

申请人： Masahiro Kanai

发明人： Masahiro Kanai

IPC分类号： A61M100

CPC分类号： A61M5/1424 ,  A61M2005/1405

摘要： A fluid supplying apparatus having a rubber elastic film (11) with fluid contained therein, an upstream tube (30), an intermediate station (40) disposed at a distal end of the upstream tube (30) and a downstream tube (27) connected to the intermediate station (40) is provided. The upstream tube (30) has two flow paths (31A and 32A) formed in a predetermined length extending in a longitudinal direction. The intermediate station (40) has a case (41), the case (41) having a fluid outlet (51) to which the downstream tube (27) is connected, a first communicating channel (52) for intercommunicating the fluid outlet (51) and one of the flow paths (31A), a reservoir (53) in communication with the other flow path (32A), a second communicating channel (55) having a check valve (54) at an intermediate portion thereof and intercommunicating the reservoir (53) and the fluid outlet (51), and a pressing member (56) for discharging the fluid stored in the reservoir (53) to the second communicating channel (55).

摘要翻译： 一种具有橡胶弹性膜（11）的流体供给装置，其中容纳有流体，上游管（30），设置在上游管（30）的远端的中间站（40）和连接有上游管 提供到中间站（40）。 上游管（30）具有以沿长度方向延伸的预定长度形成的两个流动路径（31A和32A）。 中间站（40）具有壳体（41），壳体（41）具有连接下游管（27）的流体出口（51），用于使流体出口（51）相互连通的第一连通通道 ）和一个流动路径（31A），与另一个流动路径（32A）连通的储存器（53），在其中间部分处具有止回阀（54）的第二连通通道（55），并且将储存器 （53）和流体出口（51），以及用于将存储在储存器（53）中的流体排放到第二连通通道（55）的按压构件（56）。

公开(公告)号：US06153823A

公开(公告)日：2000-11-28

申请号：US37825

申请日：1998-03-11

申请人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

发明人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/048 ,  H01L31/076 ,  H01L31/20 ,  H02J7/35 ,  H01L25/00

CPC分类号： H02J7/35 ,  B32B17/04 ,  B32B17/10788 ,  H01L31/048 ,  H01L31/076 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/548 ,  Y10S136/293

摘要： A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.

摘要翻译： 提供一种光电转换元件，其包括基板，形成在基板上的非单晶半导体的多个半导体结以及覆盖半导体结的表面材料。 半导体结具有彼此不同的各自的吸收光谱，并且各自的光劣化率彼此不同。 当没有表面材料存在时，由劣化率最小的半导体结产生的光电流大于具有最大劣化率的半导体结的光电流，并且当存在时，表面材料在相当于一部分的范围内吸收光 具有最小劣化率的半导体结的吸收光谱，使得由劣化率最小的半导体结产生的光电流变得小于具有最大劣化率的半导体结的光电流。

公开(公告)号：US6031198A

公开(公告)日：2000-02-29

申请号：US80922

申请日：1998-05-19

申请人： Koichiro Moriyama ,  Yukito Aota ,  Masahiro Kanai ,  Hirokazu Otoshi

发明人： Koichiro Moriyama ,  Yukito Aota ,  Masahiro Kanai ,  Hirokazu Otoshi

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00

CPC分类号： H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

摘要： A plasma processing method for processing a substrate includes a discharge beginning step of supplying a second high-frequency power into a processing chamber through an impedance matching circuit and then supplying a first high-frequency power larger than a power used in processing into the processing chamber to generate a plasma. An adjustment step of reducing the first high-frequency power to be close to the value used in processing, increasing the second high-frequency power to be close to the value in processing, and then adjusting the first high-frequency power to obtain a plasma strength of a predetermined value is part of the method. The plasma processing step of causing the impedance matching circuit to perform a matching operation and simultaneously adjusting the first high-frequency power to obtain a plasma strength of a desired value in processing is also part of the method. Plasma discharge can be automatically, smoothly begun with high reproducibility, and stable plasma discharge can be maintained. Even in the case of disappearance of discharge, plasma discharge can be quickly restarted.

摘要翻译： 用于处理衬底的等离子体处理方法包括：放电开始步骤，通过阻抗匹配电路将第二高频电力提供到处理室，然后将大于处理中使用的功率的第一高频功率提供给处理室 以产生等离子体。 将第一高频功率降低到接近于处理中使用的值的调整步骤，将第二高频功率提高到接近处理值，然后调整第一高频功率以获得等离子体 预定值的强度是该方法的一部分。 等离子体处理步骤是使阻抗匹配电路执行匹配操作并且同时调节第一高频功率以获得处理中期望值的等离子体强度。 等离子体放电可以以高再现性自动平稳地开始，并且可以保持稳定的等离子体放电。 即使在放电消失的情况下，可以快速重新开始等离子体放电。

公开(公告)号：US5220181A

公开(公告)日：1993-06-15

申请号：US825281

申请日：1992-01-15

申请人： Masahiro Kanai ,  Hisami Tanaka ,  Harumi Sakou

发明人： Masahiro Kanai ,  Hisami Tanaka ,  Harumi Sakou

IPC分类号： C08G77/60 ,  H01L31/0224 ,  H01L31/062 ,  H01L31/07 ,  H01L51/00 ,  H01L51/30

CPC分类号： H01L51/4286 ,  C08G77/60 ,  H01L31/022425 ,  H01L31/062 ,  H01L31/07 ,  H01L51/0034 ,  H01L51/0094 ,  Y02E10/549

摘要： An improved junction type photovoltaic element, characterized by having an organic semiconductor layer formed of a polysilane compound of 6000 to 200000 in weight average molecular weight which is represented by the following general formula (I): ##STR1## Wherein, R.sub.1 stands for an albyl group of 1 to 2 carbon atoms; R.sub.2 stands for an alkyl group, cycloalkyl group, aryl group or aralkyl group of 3 to 8 carbon atoms; R.sub.3 stands for an alkyl group of 1 to 4 carbon atoms; R.sub.4 stands for an alkyl group of 1 to 4 carbon atoms; A and A' respectively stands for an alkyl group, cycloalkyl group, aryl group or aralkyl group of 4 to 12 carbon atoms wherein the two substituents may be the same or different one from the other; and each of n and m is a mole ratio showing the proportion of the number of respective monomers versus the total of the monomers in the polymer wherein n+m=1, 0

摘要翻译： 一种改进的接合型光电元件，其特征在于具有由以下通式（I）表示的重均分子量为6000〜200000的聚硅烷化合物形成的有机半导体层：其中，R 1为 对于1至2个碳原子的伯氨基; R2代表3-8个碳原子的烷基，环烷基，芳基或芳烷基; R3表示1〜4个碳原子的烷基; R4代表1至4个碳原子的烷基; A和A'分别代表4至12个碳原子的烷基，环烷基，芳基或芳烷基，其中两个取代基可以彼此相同或不同; 并且n和m中的每一个是显示各单体数目与聚合物中单体总量的比例的摩尔比，其中n + m = 1，0

公开(公告)号：US5126169A

公开(公告)日：1992-06-30

申请号：US639410

申请日：1991-01-10

申请人： Shunichi Ishihara ,  Hisanori Tsuda ,  Masahiro Kanai ,  Masafumi Sano

发明人： Shunichi Ishihara ,  Hisanori Tsuda ,  Masahiro Kanai ,  Masafumi Sano

IPC分类号： C23C16/452 ,  G03G5/082

CPC分类号： C23C16/452 ,  G03G5/08278

摘要： A process for forming a deposited film on a substrate which comprises introducing plural kinds of precursors formed in activation spaces (B), as starting materials for a deposited film and an active species formed in an activation space (C) which is to react with at least two kinds among said plural kinds of precursors respectively at different reaction rates into a deposition space (A) for forming a deposited film on a substrate, wherein the precursor having a property of reacting with said active species at a lower reaction rate is mixed with said active species at an upper stream position as compared with the precursor having a property of reacting with said active species at a higher reaction rate.

摘要翻译： 一种在基板上形成沉积膜的方法，包括引入在活化空间（B）中形成的多种前体，作为沉积膜的起始材料和形成于活化空间（C）中的活性物质，活化空间（C） 所述多种前体中的至少两种前体分别以不同的反应速率转化成用于在基底上形成沉积膜的沉积空间（A），其中具有与所述活性物质以较低反应速率反应的性质的前体与 所述活性物质在上游位置与前体相比具有与所述活性物质以更高反应速率反应的性质。

公开(公告)号：US5002618A

公开(公告)日：1991-03-26

申请号：US467525

申请日：1990-01-19

申请人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

发明人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

IPC分类号： H01L21/205 ,  H01L31/0304 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0304 ,  H01L31/03042 ,  H01L31/075 ,  H01L31/184 ,  H01L31/20 ,  Y02E10/544 ,  Y02E10/548

摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of boron atoms (B), arsenic atoms (As), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the rage of 50 to 800 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 6 atomic %; said i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).

摘要翻译： 一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种 层包括由硼原子（B），砷原子（As），氢原子（H），任选的氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜， 所述多晶半导体膜含有平均尺寸在50〜800范围内的晶粒，所述多晶半导体膜含有0.5〜6原子％的氢原子（H）; 所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）的至少一种原子或 （b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种 选自氢原子（H）和氟原子（F）的原子。