公开(公告)号：US10128152B2

公开(公告)日：2018-11-13

申请号：US15298756

申请日：2016-10-20

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Oki Gunawan

IPC: H01F7/02 ,  H01F7/00 ,  H01F7/20 ,  G01D5/24 ,  H01L21/768 ,  H01L43/12 ,  H01L21/02 ,  H01L21/283 ,  H01L21/66 ,  H01L23/532 ,  B82Y40/00

Abstract: A magnetic trap is configured to arrange at least one diamagnetic rod. The magnetic trap includes first and second magnets on a substrate that forms the magnetic trap defining a template configured to self-assemble diamagnetic material. Each of the first and second magnets extends along a longitudinal direction to define a magnet length, and contact each other to define a contact line. The first magnet and the second magnet have a diametric magnetization in a direction perpendicular to the contact line and the longitudinal direction so as to generate a longitudinal energy potential that traps the diamagnetic rod along the longitudinal direction.

公开(公告)号：US20180277670A1

公开(公告)日：2018-09-27

申请号：US15988375

申请日：2018-05-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L29/76 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02 ,  H01L29/10 ,  H01L29/165 ,  H01L29/08 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L29/7613 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/30604 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1037 ,  H01L29/127 ,  H01L29/165 ,  H01L29/4232 ,  H01L29/42372 ,  H01L29/66439

Abstract: Semiconductor devices include a thin channel region formed on a buried insulator. A source and drain region is formed on the buried insulator, separated from the channel region by notches. A gate structure is formed on the thin channel region.

公开(公告)号：US10050167B2

公开(公告)日：2018-08-14

申请号：US15179109

申请日：2016-06-10

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Shu-Jen Han ,  Li-Wen Hung

IPC: H01L23/00 ,  H01L31/02 ,  H01L31/105 ,  H01L31/0203 ,  G06K19/073 ,  G06K7/10 ,  H01L31/075 ,  H01L31/0288 ,  H01L31/18 ,  B81C1/00 ,  H01L31/05 ,  H01L23/544

Abstract: Embodiments relate to the detection of semiconductor tampering with a light-sensitive circuit. A tamper detection device for an integrated circuit includes a light-sensitive circuit disposed within a package of an integrated circuit. The light-sensitive circuit closes in response to an exposure to a light source, indicating a tamper condition.

公开(公告)号：US20180068925A1

公开(公告)日：2018-03-08

申请号：US15258347

申请日：2016-09-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L23/373 ,  H01L29/51 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02

Abstract: A field effect transistor includes an exposed channel region disposed between a source region and a drain region. A gate electrode is disposed over the exposed channel region. An electrolyte gel is disposed between the gate electrode and the exposed channel region, wherein ions are immobilized in the electrolyte gel below a transition temperature and mobilized above the transition temperature to increase device resistance.

公开(公告)号：US20180059257A1

公开(公告)日：2018-03-01

申请号：US15250090

申请日：2016-08-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: G01T1/04

CPC classification number: G01T1/04

Abstract: A dosimetry device includes a first chamber formed on a substrate with a first decomposable barrier sensitive to radiation and a first chemical component. A second chamber is formed on the substrate in proximity of the first chamber and includes a second decomposable barrier sensitive to radiation and a second chemical component. Upon a radiation event, decomposition of the first and second barriers of the first and second chambers permits a mixing of the first and second chemical components to cause a visible change of the dosimetry device.

公开(公告)号：US20170352751A1

公开(公告)日：2017-12-07

申请号：US15170448

申请日：2016-06-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L29/76 ,  H01L29/423 ,  H01L29/165 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L21/306 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7613 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/30604 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1037 ,  H01L29/127 ,  H01L29/165 ,  H01L29/4232 ,  H01L29/42372 ,  H01L29/66439

Abstract: Semiconductor devices and methods of making the same include forming a gate structure on a thin semiconductor layer. Additional semiconductor material is formed on the thin semiconductor layer. The thin semiconductor layer is etched back and the additional semiconductor material to form source and drain regions and a channel region, with notches separating the source and drain region from the channel region.

公开(公告)号：US20170250142A1

公开(公告)日：2017-08-31

申请号：US15596551

申请日：2017-05-16

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Kangguo Cheng ,  Fei Liu

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/29

CPC classification number: H01L23/573 ,  G01T1/02 ,  H01L21/56 ,  H01L23/295 ,  H01L23/57

Abstract: Circuits which self-destruct under radiation are provided. In one aspect, a method for creating a radiation-sensitive circuit is provided. The method includes the step of: connecting an integrated circuit to a power supply and to a ground in parallel with at least one dosimeter device, wherein the dosimeter device is configured to change from being an insulator to being a conductor under radiation. Radiation-sensitive circuits are also provided.

公开(公告)号：US09704965B1

公开(公告)日：2017-07-11

申请号：US15277291

申请日：2016-09-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Shu-Jen Han ,  Ning Li ,  Jianshi Tang

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/51 ,  H01L21/28 ,  H01L21/265 ,  H01L29/08 ,  H01L29/78 ,  H01L21/3205

CPC classification number: H01L21/2807 ,  B82Y10/00 ,  H01L21/26513 ,  H01L21/28088 ,  H01L21/32056 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66568 ,  H01L29/775 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes forming a channel layer on a substrate. A gate dielectric is deposited on the channel layer, and a mask is patterned on the gate dielectric. An exposed portion of the gate dielectric is removed to expose a first source/drain region and a second source/drain region of the channel layer. A first source/drain contact is formed on the first source/drain region and a second source/drain contact is formed on the second source/drain region. A cap layer is formed over the first source/drain contact and the second source/drain contact, and the mask is removed. Spacers are formed adjacent to sidewalls of the first source/drain contact and the second source/drain contact. An oxide region is formed in the cap layer and a carbon material is deposited on an exposed portion of the gate dielectric.

公开(公告)号：US20170133609A1

公开(公告)日：2017-05-11

申请号：US14933339

申请日：2015-11-05

Applicant: International Business Machines Corporation

Inventor： Qing Cao ,  Shu-Jen Han ,  Jianshi Tang

IPC: H01L51/10 ,  H01L51/05

CPC classification number: H01L51/105 ,  H01L51/0021 ,  H01L51/0026 ,  H01L51/0048 ,  H01L51/0558 ,  H01L2251/301

Abstract: A method of forming an end-bonded contact on a semiconductor is disclosed herein. The method can include forming a dielectric layer on a substrate and depositing a carbon nanotube layer onto the dielectric layer. Additionally, the method can include depositing a resist mask onto the carbon nanotube layer and patterning the resist mask to form a contact mold such that a portion of the carbon nanotube layer is exposed. In some aspects, the method can include depositing a contact metal such that the contact metal contacts the exposed carbon nanotube layer and thermally annealing the device such that the carbon nanotube layer dissolves into the contact metal such that a single contact surface is formed between the contact and the carbon nanotube layer.

公开(公告)号：US09620432B2

公开(公告)日：2017-04-11

申请号：US14843786

申请日：2015-09-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01L29/00 ,  H01L23/367 ,  H01L23/525 ,  H01L23/373 ,  H01L29/06

CPC classification number: H01L23/525 ,  H01L21/02115 ,  H01L21/32053 ,  H01L21/823437 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/3732 ,  H01L23/5228 ,  H01L23/5256 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/0649

Abstract: A semiconductor device includes a first dielectric layer formed on a second dielectric layer and planar contacts formed in the second dielectric layer. The planar contacts are spaced apart to form a gap therebetween. The first dielectric layer includes a thermally conductive dielectric layer and is formed on lateral sides of the planar contacts and in the gap. A resistive element is formed between the planar contacts over the gap and in contact with at least the thermally conductive dielectric layer in the gap.