摘要:
In some embodiments, a method includes providing an integrated circuit (IC) die in a package. The IC die may have a metal layer on a back surface of the IC die. The method may also include applying a bias signal to the IC die via the metal layer.
摘要:
An apparatus for and method of modifying an IC design layout of an integrated circuit, comprising: accessing an initial IC design layout, with the initial layout including a plurality of MOSFET devices having a common substrate; and removing a plurality of body contacts of the MOSFET devices to create a first modified IC design layout.
摘要:
An interconnect architecture is provided to reduce power consumption. A first driver may drive signals on a first interconnect and a second driver may drive signals on a second interconnect. The first driver may be powered by a first voltage and the second driver may be powered by a second voltage different than the first voltage.
摘要:
A cycle latch includes a control circuit which increases the pull-up rate of a storage node by conditionally discharging the feedback node in a cross-coupled inverter keeper structure. The cycle latch includes an NMOS transistor switch for transferring an input value to the storage node, and two more NMOS transistors connected in series for performing the function of the control circuit. By connecting the storage node to a pre-discharged feedback node and then driving the latch with a low-swing clock, improved performance in terms of delay times, energy consumption, and robustness is achieved.
摘要:
A cycle latch includes a control circuit which increases the pull-up rate of a storage node by conditionally discharging the feedback node in a cross-coupled inverter keeper structure. The cycle latch includes an NMOS transistor switch for transferring an input value to the storage node, and two more NMOS transistors connected in series for performing the function of the control circuit. By connecting the storage node to a pre-discharged feedback node and then driving the latch with a low-swing clock, improved performance in terms of delay times, energy consumption, and robustness is achieved.
摘要:
Described herein are apparatus, method, and system for reducing clock-to-output delay of a sequential logic unit in a processor. The apparatus comprises a sequential unit including: a data path, to receive an input signal, including logic gates to operate on a first power supply level, the data path to generate an output signal; and a clock path including logic gates to operate on a second power supply level, the logic gates of the clock path to sample the input signal using a sampling signal to generate the output signal, wherein the second power supply level is higher than the first power supply level. The apparatus improves (i.e. reduces) setup time of the sequential unit and allows the processor to operate at minimum operating voltage (Vmin) without degrading performance of the sequential unit.
摘要:
Described is an apparatus which comprises: a clamp coupled between a first power supply and a second power supply; and a circuit to operate with the second power supply, wherein the clamp is operable to adjust the second power supply when the apparatus enters a low power mode.
摘要:
An integrated circuit (IC) package is disclosed. The IC package includes a first die; and a second die bonded to the CPU die in a three dimensional packaging layout.
摘要:
Embodiments for data dependent boosted (DDB) bit cells that may allow for smaller minimum cell supplies (Vmin) without necessarily having to increase device dimensions are presented.
摘要:
A system may include acquisition of a supply voltage information representing past supply voltages supplied to an electrical component, acquisition of a temperature information representing past temperatures of the electrical component, and control of a performance characteristic of the electrical component based on the supply voltage information and the temperature information. Some embodiments may further include determination of a reliability margin based on the supply voltage information, the temperature information, and on a reliability specification of the electrical component, and change of the performance characteristic based on the reliability margin.