公开(公告)号：US06264377B1

公开(公告)日：2001-07-24

申请号：US09261960

申请日：1999-03-03

申请人： Masahiro Mitsuda ,  Tohru Nishikawa ,  Tomoaki Uno

发明人： Masahiro Mitsuda ,  Tohru Nishikawa ,  Tomoaki Uno

IPC分类号： G02B636

CPC分类号： G02B6/4246

摘要： EA bidirectional optical semiconductor apparatus of the present invention includes: a substrate embedding an optical waveguide, through which output light and input light are propagated; a semiconductor light-emitting device for emitting the output light toward one end of the optical waveguide; an optical branching filter, provided in the optical waveguide, for transmitting at least part of the output light and guiding at least part of the input light to the outside of the optical waveguide; a semiconductor light-receiving device, provided over the substrate, for receiving the input light guided by the optical branching filter to the outside of the optical waveguide; and a light-blocking member, formed on the surface of the semiconductor light-receiving device, for blocking the light emitted from the semiconductor light-emitting device.

摘要翻译： 本发明的EA双向光学半导体装置包括：嵌入光波导的基板，输出光和输入光通过该光波导传播; 用于向所述光波导的一端发射所述输出光的半导体发光装置; 设置在光波导中的光分路滤波器，用于传输至少部分输出光并将至少部分输入光引导到光波导的外部; 半导体光接收装置，设置在所述基板上，用于将由所述光分路滤波器引导的输入光接收到所述光波导的外部; 以及形成在半导体光接收装置的表面上的用于阻挡从半导体发光器件发射的光的遮光部件。

公开(公告)号：US5978535A

公开(公告)日：1999-11-02

申请号：US39379

申请日：1998-03-16

申请人： Masahiro Mitsuda ,  Souichi Kimura ,  Tomoaki Uno

发明人： Masahiro Mitsuda ,  Souichi Kimura ,  Tomoaki Uno

IPC分类号： G02B6/32 ,  G02B6/26 ,  G02B6/42 ,  G02B27/28 ,  G02F1/09 ,  H01S3/00 ,  H01S3/06 ,  H01S3/10 ,  H01S5/00 ,  H01S5/022 ,  H01S5/026 ,  G02B6/36 ,  H01S3/091

CPC分类号： G02B6/4208 ,  H01S5/02252 ,  G02B6/2746 ,  G02B6/4213 ,  G02B6/424 ,  G02B6/4271 ,  G02B6/4286 ,  G02F1/093 ,  H01S5/0064 ,  H01S5/0224 ,  H01S5/02284 ,  H01S5/0683 ,  Y10S372/703

摘要： An active layer of a semiconductor laser element held by a laser mount is formed to be closer to the bottom than to the center of the height of the semiconductor laser element. A laser beam emitted from the active layer passes through a collective lens and an optical isolator and enters an incidence portion of an optical fiber. Returning light reflected by the incidence portion of the optical fiber passes through the optical isolator and the collective lens and is collected onto an end face of the laser mount. The optical isolator includes first and second rutiles which transmit normal light with refraction and abnormal light without refraction, a Faraday element which rotates a polarization plane of transmitted light in the clockwise direction by 45 degrees, and a permanent magnet for applying a magnetic field to the Faraday element.

摘要翻译： 由激光器座保持的半导体激光元件的有源层形成为比半导体激光元件的高度的中心更靠近底部。 从有源层发射的激光束通过集体透镜和光隔离器并进入光纤的入射部分。 由光纤的入射部反射的返回光通过光隔离器和集体透镜，并被收集在激光座的端面上。 光隔离器包括第一和第二红宝石，其透射具有折射的正常光和不具有折射的异常光;将透射光的偏振面沿顺时针方向旋转45度的法拉第元件和用于向 法拉第元素。

公开(公告)号：US5914808A

公开(公告)日：1999-06-22

申请号：US701987

申请日：1996-08-23

申请人： Masahiro Mitsuda ,  Jun Ohya ,  Tomoaki Uno

发明人： Masahiro Mitsuda ,  Jun Ohya ,  Tomoaki Uno

IPC分类号： G02F1/35 ,  H01S3/06 ,  H01S3/067 ,  H01S3/10 ,  H01S3/00

CPC分类号： H01S3/06758

摘要： The fiber amplifier of this invention includes: a first rare earth element doped fiber; a second rare earth element doped fiber; and a pump light source for generating pump light for exciting the first rare earth element doped fiber and the second rare earth element doped fiber, the fiber amplifier receiving analog signal light and amplifying the analog signal light, wherein the fiber amplifier further includes a directional transmitter disposed between the first rare earth element doped fiber and the second rare earth element doped fiber, and a transmittance of the directional transmitter for at least light having the same wavelength as the signal light propagating from the first rare earth element doped fiber to the second rare earth element doped fiber is larger than a transmittance of the directional transmitter for the light propagating from the second rare earth element doped fiber to the first rare earth element doped fiber.

摘要翻译： 本发明的光纤放大器包括：第一稀土元素掺杂光纤; 第二稀土元素掺杂光纤; 以及泵浦光源，用于产生用于激发第一稀土元素掺杂光纤和第二稀土元素掺杂光纤的泵浦光，所述光纤放大器接收模拟信号光并放大模拟信号光，其中光纤放大器还包括定向发射器 设置在第一稀土元素掺杂光纤和第二稀土元素掺杂光纤之间，并且定向发射器的透射率至少为与从第一稀土元素掺杂光纤传播到第二稀土元素掺杂光纤的信号光具有相同波长的光 对于从第二稀土元素掺杂光纤向第一稀土元素掺杂光纤传播的光，定向发送器的透射率大于地球元素掺杂光纤。

公开(公告)号：US5835650A

公开(公告)日：1998-11-10

申请号：US746718

申请日：1996-11-15

申请人： Yasuo Kitaoka ,  Kazuhisa Yamamoto ,  Makoto Kato ,  Tomoaki Uno ,  Kiminori Mizuuchi ,  Kenichi Nishiuchi

发明人： Yasuo Kitaoka ,  Kazuhisa Yamamoto ,  Makoto Kato ,  Tomoaki Uno ,  Kiminori Mizuuchi ,  Kenichi Nishiuchi

IPC分类号： G02B6/42 ,  G02F1/37 ,  H01S5/022 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/0683 ,  H01S5/0687 ,  G02B6/36

CPC分类号： H01S5/0687 ,  G02B6/42 ,  G02B6/4201 ,  G02B6/4257 ,  G02B6/4272 ,  H01S5/06256 ,  G02B6/4213 ,  G02B6/4215 ,  G02B6/4224 ,  G02B6/4271 ,  G02F1/37 ,  H01S5/0092 ,  H01S5/02252 ,  H01S5/02476 ,  H01S5/0612 ,  H01S5/06837

摘要： A light generating apparatus includes: a submount; a semiconductor laser chip mounted on the submount; a substrate which is mounted on the submount and includes an optical waveguide; and a substance having a predetermined thickness which is disposed between the semiconductor laser chip and the substrate. In an oscillation wavelength stabilizing apparatus for a light source, the light source is a semiconductor laser which includes: an active region for providing gain; and a distributed Bragg reflection (DBR) region for controlling an oscillation wavelength. The apparatus includes a control section which monotonously varies, in a first direction, a DBR current to be input to the DBR region while detecting the oscillation wavelength of an output light of the semiconductor laser so as to detect a DBR current value I.sub.0 corresponding to a predetermined wavelength value, and then monotonously varies the DBR current in a second direction which is opposite the first direction beyond the detected value I.sub.0, and then monotonously varies the DBR current in the first direction again to set the DBR current at the detected value I.sub.0, thereby fixing the oscillation wavelength of the semiconductor laser chip at the predetermined wavelength value.

公开(公告)号：US5659558A

公开(公告)日：1997-08-19

申请号：US610884

申请日：1996-03-05

申请人： Genji Tohmon ,  Jun Ohya ,  Tomoaki Uno

发明人： Genji Tohmon ,  Jun Ohya ,  Tomoaki Uno

IPC分类号： H01S3/067 ,  H01S3/094 ,  H01S3/16 ,  H01S3/30

CPC分类号： H01S3/067 ,  H01S3/094096 ,  H01S3/1616 ,  H01S3/1645

摘要： A first pumping beam at a wavelength of 1210 nm emitted from a first pumping source is focused by a first lens system on an optical fiber. A second pumping beam at a wavelength of 650 nm emitted from a second pumping source passes through a coupler and a second lens system and arrives at the optical fiber to be incident thereon. Tm ions with which a core portion of the optical fiber is doped sequentially experience a ground-state level absorption transition upon absorption of the first pumping beam, an excited-state level absorption transition to an upper laser level upon absorption of the second pumping beam, and a radiative transition from the upper laser level to a ground-state level, thereby emitting light at a wavelength of 460 to 500 nm. The light at a wavelength of 460 to 500 nm emitted from the Tm ions is resonated by a resonator consisting of an incident mirror and an emitting mirror and outputted as a laser beam.

摘要翻译： 从第一泵浦源发射的波长为1210nm的第一泵浦光束由第一透镜系统聚焦在光纤上。 从第二泵浦源发射的波长为650nm的第二泵浦光束穿过耦合器和第二透镜系统并到达光纤入射到其上。 掺杂光纤的纤芯部分的Tm离子顺序地经受吸收第一泵浦光束时的基态状态电平吸收转变，吸收第二泵浦光束时的激发态电平吸收跃迁到上激光水平， 以及从上激光电平到基态电平的辐射转变，从而发射波长为460〜500nm的光。 从Tm离子发射的波长为460〜500nm的光由入射镜和发射镜构成的谐振器谐振，作为激光束输出。

公开(公告)号：US08040708B2

公开(公告)日：2011-10-18

申请号：US12480112

申请日：2009-06-08

申请人： Yukihiro Sato ,  Tomoaki Uno

发明人： Yukihiro Sato ,  Tomoaki Uno

IPC分类号： H02M1/00

CPC分类号： H01L23/492 ,  H01L23/3107 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/33 ,  H01L24/34 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/91 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85439 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00 ,  H01L2924/00012

摘要： The reliability of a semiconductor device is improved.A package of a semiconductor device internally includes a first semiconductor chip and a second semiconductor chip in which power MOS•FETs are formed and a third semiconductor chip in which a control circuit controlling the first and second semiconductor chips is formed. The first to third semiconductor chips are mounted on die pads respectively. Source electrode bonding pads of the first semiconductor chip on a high side are electrically connected with a first die pad of the die pads via a metal plate. On a top surface of the die pad 7D2, a plated layer formed in a region where the second semiconductor chip is mounted, and another plated layer formed in a region where the metal plate is joined are provided and the plated layers are separated each other with a region where no plated layer is formed in between.

摘要翻译： 提高了半导体器件的可靠性。 半导体器件的封装在内部包括形成功率MOS•FET的第一半导体芯片和第二半导体芯片，以及形成控制第一和第二半导体芯片的控制电路的第三半导体芯片。 第一至第三半导体芯片分别安装在芯片焊盘上。 第一半导体芯片的高侧的源电极接合焊盘通过金属板与管芯焊盘的第一管芯焊盘电连接。 在芯片焊盘7D2的顶面设置有形成在安装有第二半导体芯片的区域中的镀层和形成在金属板接合的区域中的另一个镀层，并且将镀层彼此分离，并且用 在其间不形成镀层的区域。

公开(公告)号：US06517257B2

公开(公告)日：2003-02-11

申请号：US09985751

申请日：2001-11-06

申请人： Tohru Nishikawa ,  Tomoaki Uno ,  Genji Tohmon ,  Masahiro Mitsuda

发明人： Tohru Nishikawa ,  Tomoaki Uno ,  Genji Tohmon ,  Masahiro Mitsuda

IPC分类号： G02B636

CPC分类号： G02B6/4246 ,  G02B6/4224

摘要： The optical transmitter/receiver apparatus of the invention includes: an optical fiber for transmitting/receiving an optical signal therethrough; and a first base including mutually spaced optical signal transmitting and receiving regions and a fiber end supporting region located between the optical signal transmitting and receiving regions. A semiconductor laser device for emitting the optical signal to be transmitted is secured to the optical signal transmitting region of the first base. A fiber end supporting portion for supporting one end of the optical fiber, to which the optical signal emitted from the semiconductor laser device is incident, is formed in the fiber end supporting region of the first base. A second base for supporting the body of the optical fiber is secured to the optical signal receiving region of the first base. A reflective filter for transmitting the optical signal to be transmitted, emitted from the semiconductor laser device, and for reflecting the optical signal to be received, incident through the other end of the optical fiber, is supported by being inserted into the second base and the body of the optical fiber. A light-receiving device for receiving the optical signal to be received, reflected by the reflective filter, is secured to the second base.

公开(公告)号：US06406196B1

公开(公告)日：2002-06-18

申请号：US08809976

申请日：1997-07-24

申请人： Tomoaki Uno ,  Jun Ohya ,  Genji Tohmon ,  Masahiro Mitsuda

发明人： Tomoaki Uno ,  Jun Ohya ,  Genji Tohmon ,  Masahiro Mitsuda

IPC分类号： G02B636

CPC分类号： G02B6/12007 ,  G02B6/421 ,  G02B6/4214 ,  G02B6/4246 ,  G02B2006/12109 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/0401

摘要： The optical device of the present invention includes a substrate, at least one first groove formed on the substrate, an optical fiber placed in the first groove, and at least one second groove diagonally formed across the optical fiber. Furthermore, the optical device includes an optical member inserted in the second groove, having a surface which reflects or diffracts at least a part of light propagating through the optical fiber. A photodetector is placed at a position where light which is reflected or diffracted by the optical member is received. As a result, an miniaturized optical device having a low loss and high reliability can be provided at low cost.

摘要翻译： 本发明的光学装置包括基板，形成在基板上的至少一个第一凹槽，放置在第一凹槽中的光纤以及横跨光纤对角地形成的至少一个第二凹槽。 此外，光学装置包括插入第二凹槽中的光学构件，具有反射或衍射穿过光纤的光的至少一部分的表面。 光电检测器被放置在被光学部件反射或衍射的光的位置。 结果，可以以低成本提供具有低损耗和高可靠性的小型化光学器件。

公开(公告)号：US5598294A

公开(公告)日：1997-01-28

申请号：US515714

申请日：1995-08-16

申请人： Tomoaki Uno ,  Jun Ohya ,  Masahiro Mitsuda

发明人： Tomoaki Uno ,  Jun Ohya ,  Masahiro Mitsuda

IPC分类号： H01S3/067 ,  H01S3/10 ,  H01S3/16 ,  H01S3/23 ,  H04B10/291 ,  H04B10/294 ,  H01S3/00

CPC分类号： H04B10/2941 ,  H01S3/10023 ,  H04B10/2912 ,  H01S2301/04 ,  H01S3/0675 ,  H01S3/1608 ,  H01S3/2333

摘要： The optical fiber amplifier of the invention includes: a rare earth element doped optical fiber, and a pump light generator for optically pumping the rare earth element doped optical fiber. The optical fiber amplifier further includes a reflector for selectively reflecting an optical signal input from an input end of the rare earth element doped optical fiber to the input end, so as to give a gain to the optical signal.

摘要翻译： 本发明的光纤放大器包括：稀土元素掺杂光纤，以及用于光学泵浦稀土元素掺杂光纤的泵浦光发生器。 光纤放大器还包括用于选择性地将从稀土元素掺杂光纤的输入端输入的光信号反射到输入端的反射器，以便给予光信号增益。

公开(公告)号：US5563733A

公开(公告)日：1996-10-08

申请号：US519457

申请日：1995-08-25

申请人： Masahiro Mitsuda ,  Jun Ohya ,  Tomoaki Uno

发明人： Masahiro Mitsuda ,  Jun Ohya ,  Tomoaki Uno

IPC分类号： H01S3/067 ,  H04B10/291 ,  H04B10/297 ,  H04J14/02 ,  H01S3/00 ,  H04B10/00

CPC分类号： H04B10/2912 ,  H01S3/06754 ,  H04B10/291 ,  H04B10/2971 ,  H04J14/0221 ,  H01S3/06787

摘要： An optical fiber amplifier for optically amplifying a plurality of signals having different wavelengths includes a series of rare earth doped optical fibers and at least one pump light source generating pump light for exciting the series of rare earth doped optical fibers. A first signal among the plurality of signals propagates through a part of the series of rare earth doped optical fibers, and a second signal among the plurality of signals propagates through all of the series of rare earth doped optical fibers.

摘要翻译： 用于光学放大具有不同波长的多个信号的光纤放大器包括一系列稀土掺杂光纤和至少一个泵浦光源，用于激发该系列稀土掺杂光纤。 多个信号中的第一信号通过一系列稀土掺杂光纤传播，多个信号中的第二信号通过所有的稀土掺杂光纤系列传播。