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    LIGHT-EMITTING DIODE DRIVING DEVICE, DRIVING METHOD AND LIGHT-EMITTING DIODE LIGHTING MODULE COMPRISING THE SAME
    51.
    发明申请
    LIGHT-EMITTING DIODE DRIVING DEVICE, DRIVING METHOD AND LIGHT-EMITTING DIODE LIGHTING MODULE COMPRISING THE SAME 有权
    发光二极管驱动装置，驱动方法和包含其的发光二极管照明模块

    公开(公告)号：US20150317930A1

    公开(公告)日：2015-11-05

    申请号：US14715341

    申请日：2015-05-18

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Chang Yeon Kim ,  Tae Hyuk Im ,  Young Wug Kim

    IPC: G09G3/32

    CPC classification number: G09G3/32 ,  H05B33/0815 ,  Y02B20/346

    Abstract: A light-emitting diode driving device enabling an excellent heat-dissipation function and high-efficient driving is disclosed. The disclosed LED driving device comprises: a power source unit providing an alternate current voltage; a rectification unit communicatively coupled to the power source and rectifying the alternate current voltage; a driving signal generation unit configured to receive the rectified voltage from the rectification unit and generate a primary driving signal by using the rectified voltage; and an LED driving signal modulation unit communicatively coupled to the driving signal generator, the LED driving signal modulation unit configured to receive the primary driving signal and generating a secondary pulse driving signal by modulating the primary driving signal, and LED groups including LEDs and configured to receive the primary driving signal or the second pulse driving signal such that the LED groups operate responsive to the primary driving signal or the secondary pulse driving signal.

    Abstract translation: 公开了一种能够实现优异的散热功能和高效率驱动的发光二极管驱动装置。 所公开的LED驱动装置包括：提供交流电压的电源单元; 整流单元，其通信地耦合到电源并整流交流电压; 驱动信号生成单元，被配置为从整流单元接收整流电压，并通过使用整流电压产生主驱动信号; 以及LED驱动信号调制单元，其通信地耦合到所述驱动信号发生器，所述LED驱动信号调制单元被配置为接收所述主驱动信号并且通过调制所述主驱动信号产生次脉冲驱动信号，以及LED组包括LED并且被配置为 接收主要驱动信号或第二脉冲驱动信号，使得LED组响应于主驱动信号或辅助脉冲驱动信号而工作。

    LIGHT EMITTING DIODE MODULE FOR SURFACE MOUNT TECHNOLOGY AND METHOD OF MANUFACTURING THE SAME
    52.
    发明申请
    LIGHT EMITTING DIODE MODULE FOR SURFACE MOUNT TECHNOLOGY AND METHOD OF MANUFACTURING THE SAME 有权
    用于表面安装技术的发光二极管模块及其制造方法

    公开(公告)号：US20150295138A1

    公开(公告)日：2015-10-15

    申请号：US14752413

    申请日：2015-06-26

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A. Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

    IPC: H01L33/46 ,  H01L33/24 ,  H01L33/40

    CPC classification number: H01L33/508 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

    Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

    Abstract translation: LED被提供以包括：第一导电类型半导体层; 位于所述第一导电类型半导体层上方的有源层; 位于有源层上的第二导电类型半导体层; 以及缺陷阻挡层，其包括覆盖所述第二导电半导体层的顶表面的至少一部分的掩模区域和用于部分地暴露所述第二导电类型半导体层的顶表面的开口区域，其中所述有源层和所述第二导电类型半导体层 导电型半导体层被设置为暴露第一导电类型半导体层的一部分，并且其中缺陷阻挡层包括围绕第一区域的第一区域和第二区域，以及开口区域的面积与面积的比率 在第一区域中的掩模区域与第二区域中的开口区域的面积与掩蔽区域的面积的比率不同。

    HIGH EFFICIENCY LIGHT EMITTING DIODE
    54.
    发明申请
    HIGH EFFICIENCY LIGHT EMITTING DIODE 有权
    高效发光二极管

    公开(公告)号：US20140166976A1

    公开(公告)日：2014-06-19

    申请号：US14132123

    申请日：2013-12-18

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chang Ik Im ,  Mi Hee Lee ,  Ju Yong Park ,  Sung Su Son ,  Chang Yeon Kim

    IPC: H01L33/50 ,  H01L33/04

    CPC classification number: H01L33/502 ,  G02B1/007 ,  H01L33/04 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0083

    Abstract: Exemplary embodiments of the present invention provide a high efficiency light emitting diode including a semiconductor stack including a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor layer, a first electrode disposed on the semiconductor stack, and a graphene-metamaterial laminate structure disposed between the first electrode and the semiconductor stack.

    Abstract translation: 本发明的示例性实施例提供了一种高效率发光二极管，其包括包括第一类型化合物半导体层，有源层和第二类型化合物半导体层的半导体堆叠，设置在半导体堆叠上的第一电极和 设置在第一电极和半导体堆叠之间的石墨烯 - 超材料层压结构。

    Light emitting device for display and led display apparatus having the same
    55.
    发明授权
    Light emitting device for display and led display apparatus having the same 有权

    公开(公告)号：US12205933B2

    公开(公告)日：2025-01-21

    申请号：US18237390

    申请日：2023-08-23

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min Jang ,  Chang Yeon Kim

    IPC: H01L25/075 ,  H01L23/00 ,  H01L33/38 ,  H01L33/54 ,  H01L33/62

    Abstract: A light emitting device including first, second, and third light emitting stacks each including first and second conductivity type semiconductor layers, a first lower contact electrode in ohmic contact with the first light emitting stack, and second and third lower contact electrodes respectively in ohmic contact with the second conductivity type semiconductor layers of the second and third light emitting stacks, in which the first lower contact electrode is disposed between the first and second light emitting stacks, the second and third lower contact electrodes are disposed between the second and third light emitting stacks, and the first, second, and third lower contact electrodes include transparent conductive oxide layers.

    LED DISPLAY APPARATUS
    58.
    发明公开
    LED DISPLAY APPARATUS 审中-公开

    公开(公告)号：US20230369385A1

    公开(公告)日：2023-11-16

    申请号：US18227269

    申请日：2023-07-27

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min JANG ,  Chang Yeon Kim

    IPC: H01L27/15 ,  H01L33/56 ,  H01L33/38 ,  H01L33/62

    CPC classification number: H01L27/156 ,  H01L33/382 ,  H01L33/56 ,  H01L33/62

    Abstract: A display apparatus including a display substrate, a plurality of light emitting devices disposed on the display substrate, at least one of the light emitting devices including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, and a third LED sub-unit disposed on the second LED sub-unit, and a molding layer covering side surfaces of the light emitting devices and exposing upper surfaces thereof, in which the third LED sub-unit is disposed closer to an upper surface of the light emitting device than the first LED sub-unit.

    Light emitting device
    59.
    发明授权
    Light emitting device 有权

    公开(公告)号：US11804566B2

    公开(公告)日：2023-10-31

    申请号：US17960097

    申请日：2022-10-04

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Min Jang ,  Chang Yeon Kim ,  Myoung Hak Yang

    IPC: H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/14

    CPC classification number: H01L33/0016 ,  H01L27/156 ,  H01L33/14 ,  H01L33/387

    Abstract: A light emitting device includes a first light emitting part including a first n-type semiconductor layer, and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first transparent electrode vertically stacked one over another and exposing a portion of a first surface of the first n-type semiconductor layer, a second light emitting part spaced apart from the first mesa structure, and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode and exposing a portion of a first surface of the second n-type semiconductor layer, and a first bonding layer on which the first and second light emitting parts are disposed and electrically coupling the first n-type semiconductor layer and the second n-type semiconductor layer to each other.

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