公开(公告)号：US20180294382A1

公开(公告)日：2018-10-11

申请号：US16003782

申请日：2018-06-08

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/62 ,  H01L33/60 ,  H01L33/48 ,  H01L33/46 ,  H01L33/38 ,  H01L33/32

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light emitting diode including a first conductive type semiconductor layer; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer of the mesa, a current spreading layer disposed on the mesa and the electrode and including a first portion, a second portion, and a third portion configured to be in ohmic-contact with a first end portion, a second end portion, and a middle portion of the first conductive type semiconductor layer, respectively, an insulation layer disposed on the mesa and the first conductive type semiconductor layer and having a first region having a thickness that varies along a longitudinal direction of the first semiconductor layer.

公开(公告)号：US20180175250A1

公开(公告)日：2018-06-21

申请号：US15894768

申请日：2018-02-12

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Won Young Roh ,  Joon Sup Lee ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Seon Min Bae ,  Daewoong Suh

IPC: H01L33/46 ,  H01L33/36 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/36 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/11 ,  H01L2933/0016

Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.

公开(公告)号：US09923121B2

公开(公告)日：2018-03-20

申请号：US15501815

申请日：2015-08-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee Oh ,  Jong Kyu Kim ,  Jae Kwon Kim ,  Min Woo Kang ,  Hyun A Kim

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L33/00 ,  F21K9/232 ,  F21K9/238 ,  F21V19/00 ,  F21S8/10 ,  F21V8/00 ,  H01L33/08 ,  F21Y115/10

CPC classification number: H01L33/387 ,  F21K9/232 ,  F21K9/238 ,  F21S41/141 ,  F21S41/143 ,  F21S41/255 ,  F21S41/285 ,  F21S45/43 ,  F21S45/47 ,  F21V19/003 ,  F21Y2115/10 ,  G02B6/00 ,  G02B6/0055 ,  H01L27/156 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H01L33/647 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: A light-emitting diode and a manufacturing method therefor are disclosed. The light-emitting diode comprises: a first conductive semiconductor layer; at least two light-emitting units arranged by being spaced from each other on the first conductive semiconductor layer, respectively including an active layer and a second conductive semiconductor layer, and including one or more contact holes through which the first conductive semiconductor layer is partially exposed; an additional contact area located between the light-emitting units; a second electrode making ohmic contact with the second conductive semiconductor layer; a lower insulation layer; and a first electrode making ohmic contact with the first conductive semiconductor layer through the contact holes of each of the light-emitting units and the additional contact area.

公开(公告)号：US09893240B2

公开(公告)日：2018-02-13

申请号：US15041461

申请日：2016-02-11

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Won Young Roh ,  Joon Sup Lee ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Seon Min Bae ,  Daewoong Suh

IPC: H01L33/46 ,  H01L33/36 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L33/08

CPC classification number: H01L33/46 ,  H01L33/08 ,  H01L33/36 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/11 ,  H01L2933/0016

Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.

公开(公告)号：US09859469B2

公开(公告)日：2018-01-02

申请号：US15367464

申请日：2016-12-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first conductive layer disposed on a portion of the first semiconductor layer, a second conductive layer disposed on the second semiconductor layer, and an insulating layer overlapping the first semiconductor layer, the second semiconductor layer, and the reflection pattern, in which the insulating layer has a first region having different thicknesses and a second region having a substantially constant thickness.

公开(公告)号：US09793441B2

公开(公告)日：2017-10-17

申请号：US15271026

申请日：2016-09-20

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/50 ,  H01L33/32

CPC classification number: H01L33/508 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of die area of the opening region to the area of the masking region in the second region.

公开(公告)号：US20170236977A1

公开(公告)日：2017-08-17

申请号：US15501815

申请日：2015-08-04

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee Oh ,  Jong Kyu Kim ,  Jae Kwon Kim ,  Min Woo Kang ,  Hyun A Kim

IPC: H01L33/38 ,  H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  F21V8/00 ,  H01L33/00 ,  F21K9/232 ,  F21K9/238 ,  F21V19/00 ,  F21S8/10 ,  H01L27/15 ,  H01L33/64

CPC classification number: H01L33/387 ,  F21K9/232 ,  F21K9/238 ,  F21S41/141 ,  F21S41/143 ,  F21S41/255 ,  F21S41/285 ,  F21S45/43 ,  F21S45/47 ,  F21V19/003 ,  F21Y2115/10 ,  G02B6/00 ,  G02B6/0055 ,  H01L27/156 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H01L33/647 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: A light-emitting diode and a manufacturing method therefor are disclosed. The light-emitting diode comprises: a first conductive semiconductor layer; at least two light-emitting units arranged by being spaced from each other on the first conductive semiconductor layer, respectively including an active layer and a second conductive semiconductor layer, and including one or more contact holes through which the first conductive semiconductor layer is partially exposed; an additional contact area located between the light-emitting units; a second electrode making ohmic contact with the second conductive semiconductor layer; a lower insulation layer; and a first electrode making ohmic contact with the first conductive semiconductor layer through the contact holes of each of the light-emitting units and the additional contact area.

公开(公告)号：US09640719B2

公开(公告)日：2017-05-02

申请号：US14848232

申请日：2015-09-08

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Min Woo Kang ,  Hyun A Kim

IPC: H01L33/00 ,  H01L29/06 ,  H01L31/00 ,  H01L33/14 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/44

CPC classification number: H01L33/14 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

Abstract: Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode.

公开(公告)号：US09608171B2

公开(公告)日：2017-03-28

申请号：US14733787

申请日：2015-06-08

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Daewoong Suh

IPC: H01L33/20 ,  H01L27/15 ,  H01L33/54 ,  H01L33/62 ,  H01L33/40 ,  H01L33/44 ,  H01L25/075 ,  H01L33/38 ,  H01L23/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/24 ,  H01L33/08

CPC classification number: H01L33/44 ,  H01L24/24 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/405 ,  H01L33/54 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/00

Abstract: A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided.

公开(公告)号：US09520534B2

公开(公告)日：2016-12-13

申请号：US14848242

申请日：2015-09-08

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Min Woo Kang ,  Hyun A Kim ,  Won Young Roh ,  Jong Min Jang

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/14 ,  H01L33/38 ,  H01L33/00 ,  H01L33/40 ,  H01L33/62 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/44

CPC classification number: H01L33/14 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

Abstract: Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first conductive-type semiconductor layer; a second conductive-type semiconductor layer; an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad region electrically connected to the first conductive-type semiconductor layer; a second electrode pad region electrically connected to the second conductive-type semiconductor layer; and a spark gap formed between a first leading end electrically connected to the first electrode pad region and a second leading end electrically connected to the second electrode pad region. The spark gap can achieve electrostatic discharge protection of the light emitting diode.

Abstract translation: 公开了一种发光二极管（LED），包括其的LED模块及其制造方法。 发光二极管包括第一导电型半导体层; 第二导电型半导体层; 插入在所述第一导电型半导体层和所述第二导电型半导体层之间的有源层; 电连接到第一导电型半导体层的第一电极焊盘区; 电连接到第二导电型半导体层的第二电极焊盘区域; 以及形成在电连接到第一电极焊盘区域的第一前端与电连接到第二电极焊盘区域的第二前端之间形成的火花隙。 火花隙可以实现发光二极管的静电放电保护。