Method for manufacturing semiconductor device
    52.
    发明申请
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US20060189097A1

    公开(公告)日:2006-08-24

    申请号:US11410073

    申请日:2006-04-25

    IPC分类号: H01L21/30

    摘要: The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film, a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support to a release layer containing the first oxide and the semiconductor film and separating the release layer bonded to the support from a substrate provided with the metal layer by a physical means. Through the separation method, heat treatment is carried out to diffuse hydrogen contained in the semiconductor film, a third oxide is formed by reducing a second oxide formed at a surface boundary between the metal film and the first oxide film, and a film containing the second oxide and the third oxide, a surface boundary between the film containing the second oxide and the third oxide, and the metal film, or a surface boundary between the film containing the second oxide and the third oxide, and the first oxide is split.

    摘要翻译: 本发明是用于容易地分离大面积的全层释放层的分离方法。 此外,本发明是在形成剥离层期间不受使用诸如基板的基板的限制的分离方法。 一种分离方法,包括以下步骤:依次形成含有氢的金属膜,第一氧化物和半导体膜; 以及将载体接合到包含第一氧化物和半导体膜的剥离层,并且通过物理手段从与设置有金属层的基板分离结合到载体的剥离层。 通过分离方法,进行热处理以扩散半导体膜中所含的氢,通过还原在金属膜和第一氧化物膜之间的表面边界处形成的第二氧化物和包含第二氧化物的膜形成第三氧化物 氧化物和第三氧化物,含有第二氧化物的膜和第三氧化物的膜与金属膜之间的表面边界或含有第二氧化物的膜和第三氧化物之间的表面边界以及第一氧化物被分裂。

    Semiconductor device and manufacturing method thereof, delamination method, and transferring method
    56.
    发明授权
    Semiconductor device and manufacturing method thereof, delamination method, and transferring method 有权
    半导体装置及其制造方法,分层方法和转印方法

    公开(公告)号:US08247246B2

    公开(公告)日:2012-08-21

    申请号:US12766318

    申请日:2010-04-23

    IPC分类号: H01L21/30 H01L31/18

    摘要: A technique for forming a TFT element over a substrate having flexibility typified by a flexible plastic film is tested. When a structure in which a light-resistant layer or a reflective layer is employed to prevent the damage to the delamination layer, it is difficult to fabricate a transmissive liquid crystal display device or a light emitting device which emits light downward.A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

    摘要翻译: 测试了以柔性塑料膜为代表的柔性基板上形成TFT元件的技术。 当采用耐光层或反射层以防止对分层的损害的结构时,难以制造向下发光的透射型液晶显示装置或发光装置。 在基板上形成金属膜的状态下,通过物理手段或机械装置分离基板和分层膜,以及包含包含金属的氧化物膜和包含硅的膜的分层,其形成在 提供金属膜。 具体地说,通过在金属膜上形成包含金属的氧化物层而获得的TFT; 通过热处理使氧化层结晶; 并且在氧化物层的一层或氧化物层的界面上形成分层。

    Semiconductor device and manufacturing method thereof
    58.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US08173520B2

    公开(公告)日:2012-05-08

    申请号:US13217311

    申请日:2011-08-25

    IPC分类号: H01L21/30

    摘要: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

    摘要翻译: 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法,并且不仅使表面积小的层被剥离,而且还允许具有大表面积的被剥离层 要完全去皮。 此外,本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地,目的是将由TFT表示的各种元素(薄膜二极管,包含硅的PIN结的光电转换元件或硅电阻元件)粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。