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    Microelectromechanical systems, and devices having thin film encapsulated mechanical structures
    51.
    发明授权
    Microelectromechanical systems, and devices having thin film encapsulated mechanical structures 有权
    微机电系统和具有薄膜封装机械结构的器件

    公开(公告)号：US07288824B2

    公开(公告)日：2007-10-30

    申请号：US11323920

    申请日：2005-12-30

    Applicant: Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    IPC: H01L27/14 ,  H01L29/82 ,  H01L29/84

    CPC classification number: B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

    Abstract translation: 这里描述和说明了许多发明。 一方面，本发明涉及一种MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

    Method of fabricating microelectromechanical systems and devices having trench isolated contacts
    53.
    发明授权
    Method of fabricating microelectromechanical systems and devices having trench isolated contacts 有权
    制造具有沟槽隔离触点的微机电系统和器件的方法

    公开(公告)号：US06936491B2

    公开(公告)日：2005-08-30

    申请号：US10455555

    申请日：2003-06-04

    Applicant: Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    IPC: B81B7/00 ,  H01L21/00

    CPC classification number: B81C1/00301 ,  B81B2207/015 ,  B81B2207/095 ,  B81C2201/0176 ,  B81C2203/0136

    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging and a contact area disposed at least partially outside the chamber. The contact area is electrically isolated from nearby electrically conducting regions by way of dielectric isolation trench that is disposed around the contact area. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

    Abstract translation: 这里描述和说明了许多发明。 一方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构以及至少部分地设置在腔室外部的接触区域。 接触区域通过设置在接触区域周围的绝缘隔离沟槽与附近的导电区域电隔离。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

    Integrated method for release and passivation of MEMS structures
    54.
    发明授权
    Integrated method for release and passivation of MEMS structures 失效
    MEMS结构的释放和钝化的集成方法

    公开(公告)号：US06830950B2

    公开(公告)日：2004-12-14

    申请号：US10300970

    申请日：2002-11-20

    Applicant: Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung

    Inventor： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung

    IPC: H01L2100

    CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

    Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.

    Abstract translation: 本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体来预处理MEMS结构的表面。 处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法。

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