公开(公告)号：US20080102207A1

公开(公告)日：2008-05-01

申请号：US11715619

申请日：2007-03-08

Applicant: Yu-Min Tsai ,  Hsiao-Che Wu ,  Wen-Li Tsai

Inventor： Yu-Min Tsai ,  Hsiao-Che Wu ,  Wen-Li Tsai

IPC: C23C16/00 ,  F16K21/00

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  C23C16/481 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/9464

Abstract: A gas delivering system for an in situ thermal treatment, a thin film deposition and a use of the same are provided. The gas delivering system integrates a thermal treatment system therein so that a thin film deposition and a by rapid thermal annealing can be performed alternatively on a wafer in a reaction chamber. Accordingly, the density of the thin film can be improved and the thermal budget of the process can be reduced.

Abstract translation: 提供了一种用于原位热处理，薄膜沉积及其使用的气体输送系统。 气体输送系统将其中的热处理系统集成在一起，可以在反应室中的晶片上交替地进行薄膜沉积和快速热退火。 因此，可以提高薄膜的密度，并且可以降低该方法的热预算。

公开(公告)号：US07348042B2

公开(公告)日：2008-03-25

申请号：US10137855

申请日：2002-05-03

Applicant: Tony P. Chiang ,  Karl F. Leeser

Inventor： Tony P. Chiang ,  Karl F. Leeser

IPC: C23C8/00 ,  B05D3/00 ,  B05D3/02 ,  C23C16/00 ,  C23C16/48 ,  H05H1/20 ,  H05H1/22 ,  H05H1/24

CPC classification number: C23C16/45538 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/481 ,  C23C16/483

Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

Abstract translation: 本发明涉及适用于阻挡层，粘附层，种子层，低介电常数（低k）膜，高介电常数（高k）膜等的沉积的增强的顺序原子层沉积（ALD）技术 导电，半导电和非导电膜。 这通过以下方式实现：1）提供触发沉积反应的非热或非热解方法; 2）提供在较低温度下沉积更高密度的较纯膜的方法; 和3）提供更快和更有效的调节沉积顺序的手段，并因此提供总体处理速率，从而产生改进的沉积方法。

公开(公告)号：US07316969B2

公开(公告)日：2008-01-08

申请号：US11446675

申请日：2006-06-05

Applicant: Markus Hauf ,  Christoph Striebel

Inventor： Markus Hauf ,  Christoph Striebel

IPC: H01L21/20

CPC classification number: H01L21/67248 ,  C23C16/481 ,  C30B31/12 ,  C30B33/02 ,  H01L21/67115 ,  H01L21/67242 ,  H05B3/0047 ,  Y10T29/41

Abstract: The object of the disclosure is to measure temperature using pyrometers, in a simple and economic way, enabling precise temperature measurement, even for low temperatures. The disclosure presents an apparatus and method for thermally treating substrates, wherein the substrate is exposed to at least a first and at least a second radiation; the predetermined wavelengths of the first radiation are absorbed between the first radiation source and the substrate; a radiation from the substrate is measured in the predetermined wavelength using a radiation detector arranged on the same side as a second radiation source; the second radiation from the second radiation source is modulated and determined.

Abstract translation: 本公开的目的是以简单和经济的方式使用高温计测量温度，使得即使对于低温也能进行精确的温度测量。 本公开提供了一种用于热处理基底的装置和方法，其中所述基底暴露于至少第一和至少第二辐射; 第一辐射的预定波长在第一辐射源和衬底之间被吸收; 使用布置在与第二辐射源相同侧的辐射检测器以预定波长测量来自衬底的辐射; 调制并确定来自第二辐射源的第二辐射。

公开(公告)号：US20070297775A1

公开(公告)日：2007-12-27

申请号：US11853414

申请日：2007-09-11

Applicant: Zion Koren ,  Conor O'Carroll ,  Shuen Choy ,  Paul Timans ,  Rudy Santo Cardema ,  James Taoka ,  Arieh Strod

Inventor： Zion Koren ,  Conor O'Carroll ,  Shuen Choy ,  Paul Timans ,  Rudy Santo Cardema ,  James Taoka ,  Arieh Strod

IPC: F26B3/30

CPC classification number: H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract translation: 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。

公开(公告)号：US07269343B2

公开(公告)日：2007-09-11

申请号：US11132539

申请日：2005-05-19

Applicant: Zion Koren ,  Conor Patrick O'Carroll ,  Shuen Chun Choy ,  Paul Janis Timans ,  Rudy Santo Tomas Cardema ,  James Tsuneo Taoka ,  Arieh A. Strod

Inventor： Zion Koren ,  Conor Patrick O'Carroll ,  Shuen Chun Choy ,  Paul Janis Timans ,  Rudy Santo Tomas Cardema ,  James Tsuneo Taoka ,  Arieh A. Strod

IPC: A21B2/00 ,  C23C16/00

CPC classification number: H01L21/67115 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract translation: 公开了一种用于热处理半导体晶片的设备。 该装置包括加热装置，其包含用于将光能发射到晶片上的组装线性灯。 线性灯可以放置在各种配置中。 根据本发明，用于调节光能源的总体辐照度分布的调谐装置包括在加热装置中。 调谐装置可以是例如灯或激光器。

公开(公告)号：US20070077355A1

公开(公告)日：2007-04-05

申请号：US11242298

申请日：2005-09-30

Applicant: Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

Inventor： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

IPC: C23C16/00

CPC classification number: C23C16/481 ,  C23C16/52

Abstract: A film formation system 10 has a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, the top cover 11 has a reflective surface 13 for reflecting radiant energy back onto a substrate 19, pyrometers 405 for measuring the temperature of the substrate 19 across a number of zones, and at least one emissometer 410 for measuring the actual emissivity of the substrate 19. In another embodiment, a radiant heating system 313 is disposed under the substrate support 16. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 405, and the emissometer 410.

Abstract translation: 成膜系统10具有由侧壁18和顶盖11限定的处理室15.在一个实施例中，顶盖11具有用于将辐射能量反射回到基板19上的反射表面13，用于测量温度 穿过多个区域的基板19以及用于测量基板19的实际发射率的至少一个辐射计410。 在另一个实施例中，辐射加热系统313设置在基板支撑件16的下方。 基底19的温度由来自高温计405和em值计410的高温测量数据获得。

公开(公告)号：US20070074665A1

公开(公告)日：2007-04-05

申请号：US11242299

申请日：2005-09-30

Applicant: Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

Inventor： Juan Chacin ,  Aaron Hunter ,  Craig Metzner ,  Roger Anderson

IPC: C23C16/00

CPC classification number: C23C16/46 ,  C23C16/481 ,  C23C16/52

Abstract: A film formation system 10 includes a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, a susceptor 16 is rotatably disposed in the system 10, and overlaps with a first peripheral member 205 disposed around the sidewalls 18. A radiant heating system 313 is disposed under the susceptor 305 to heat the substrate 19. In another embodiment, the top cover 11 has equally spaced pyrometers 58 for measuring the temperature of the substrate 19 across a number of zones. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 58.

Abstract translation: 成膜系统10包括由侧壁18和顶盖11限定的处理室15。 在一个实施例中，基座16可旋转地设置在系统10中，并与设置在侧壁18周围的第一周边构件205重叠。 辐射加热系统313设置在基座305的下方以加热基板19。 在另一个实施例中，顶盖11具有相等间隔的高温计58，用于测量跨越多个区域的基底19的温度。 基板19的温度由来自高温计58的高温测量数据获得。

公开(公告)号：US20060231016A1

公开(公告)日：2006-10-19

申请号：US11471106

申请日：2006-06-19

Applicant: Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Alan Colwell ,  Eduardo Tovar

Inventor： Eric Blomiley ,  Nirmal Ramaswamy ,  Ross Dando ,  Joel Drewes ,  Alan Colwell ,  Eduardo Tovar

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: H01L21/67248 ,  C23C16/481 ,  C23C16/52 ,  C30B25/165 ,  C30B31/18

Abstract: The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.

Abstract translation: 本发明包括沉积设备，其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。 在特定方面，可以在衬底在反应室内旋转的同时测量衬底的温度。 本发明还包括沉积装置，其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制，和/或在气体流量测量时，质量流量测量装置设置在气体的位置的下游 混合 此外，本发明还包括沉积装置，其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。

公开(公告)号：US07112538B2

公开(公告)日：2006-09-26

申请号：US10293795

申请日：2002-11-12

Applicant: Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

Inventor： Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

IPC: H01L21/31

CPC classification number: C30B29/06 ,  C23C16/4405 ,  C23C16/481 ,  C30B25/02 ,  C30B25/105 ,  C30B25/14 ,  C30B33/005 ,  C30B33/02 ,  C30B33/12 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28017 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/31662 ,  H01L29/66651

Abstract: A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.

公开(公告)号：US07108753B2

公开(公告)日：2006-09-19

申请号：US10696481

申请日：2003-10-29

Applicant: Eric R. Wood

Inventor： Eric R. Wood

IPC: C23C16/46 ,  C23C16/458 ,  H01L21/306

CPC classification number: C23C16/481 ,  C23C16/44 ,  C30B25/08 ,  C30B31/10

Abstract: A semiconductor processing chamber having a plurality of ribs on an exterior surface of the chamber is provided. The ribs are positioned relative to the chamber such that shadows cast into the chamber by the ribs are offset from one another, thus more uniformly distributing radiant energy entering the chamber. In one embodiment, the ribs are positioned on the exterior surface of the chamber so that they have dissimilar radial distances from a center of the chamber. When a substrate rotates within the chamber, shadows produced by the ribs on a first side of the chamber fall substantially between secondary shadows produced by the ribs on a second side of the chamber. Likewise, shadows produced by the ribs on the second side of the chamber fall substantially between the secondary shadows produced by the ribs on the first side of the chamber.

Abstract translation: 提供了在腔室的外表面上具有多个肋的半导体处理室。 肋相对于室定位，使得通过肋投射到室中的阴影彼此偏移，从而更均匀地分布进入室的辐射能。 在一个实施例中，肋被定位在腔室的外表面上，使得它们与腔室的中心具有不同的径向距离。 当衬底在室内旋转时，腔室第一侧上的肋产生的阴影基本上落在腔室第二侧上由肋产生的次级阴影之间。 类似地，由室的第二侧上的肋产生的阴影基本上落在由室的第一侧上的肋产生的次级阴影之间。