公开(公告)号：US08759965B2

公开(公告)日：2014-06-24

申请号：US12903752

申请日：2010-10-13

申请人： Craig J. Rotay ,  John Ni ,  David Lam ,  David Lee DeWire ,  John W. Roman ,  Richard J. Ross

发明人： Craig J. Rotay ,  John Ni ,  David Lam ,  David Lee DeWire ,  John W. Roman ,  Richard J. Ross

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/66

CPC分类号： H01L23/562 ,  H01L23/66 ,  H01L25/115 ,  H01L2223/6644 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A protective modular package assembly with one or more subassemblies, each having a base element, a sidewall element coupled to the base element, and a semiconductor device disposed within and coupled to the sidewall element and the base element; a protective modular package cover having fastening sections located at opposing ends of the cover, torque elements disposed on the opposing ends and configured to fasten the cover to a core, and subassembly receiving sections disposed between the fastening sections with each subassembly receiving section operable to receive a subassembly and having a cross member along the underside of the cover; and an adhesive layer configured to affix subassemblies to respective subassembly receiving sections. The torque elements are configured to transfer a downward clamping force generated at the fastening elements to a top surface of the subassemblies via the cross member of each of the one or more subassembly receiving sections.

摘要翻译： 一种具有一个或多个子组件的保护性模块化封装组件，每个子组件具有基座元件，耦合到所述基座元件的侧壁元件以及设置在所述侧壁元件和所述基座元件内并联接到所述侧壁元件和所述基座元件的半导体器件; 保护性模块化封装盖，其具有位于盖的相对端处的紧固部分，设置在相对端部上的扭矩元件，其构造成将盖子紧固到芯部;以及子组件接收部分，其设置在紧固部分之间，每个子组件接收部分可操作以接收 子组件，并且沿着盖的下侧具有横向构件; 以及被配置为将子组件固定到相应的子组件接收部分的粘合剂层。 扭矩元件构造成经由一个或多个子组件接收部分中的每一个的横向构件将在紧固元件处产生的向下夹持力传递到子组件的顶表面。

公开(公告)号：US20140167858A1

公开(公告)日：2014-06-19

申请号：US14109879

申请日：2013-12-17

申请人： NXP B.V.

发明人： Albert Gerardus Wilhelmus Philipus van Zuijlen ,  Vittorio Cuoco ,  Josephus Henricus Bartholomeus van der Zanden

IPC分类号： H03F1/02

CPC分类号： H03F1/0288 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/3011 ,  H03F3/195 ,  H03F3/45179 ,  H03F2203/45638 ,  H03F2203/45731 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The disclosure relates to an amplifier device comprising an integrated circuit die (701a; 701b) having a first amplifier (702a; 702b) and a second amplifier. A Doherty amplifier may be implemented in accordance with the present invention. The amplifier device also comprises a first connector (706a; 706b) having a first end coupled to the first amplifier and a second end for coupling with a circuit board (718a; 718b), a second connector (708a; 708b) having a first end coupled to the second amplifier (704a; 704b) and a second end for coupling with a circuit board (718a; 718b), a shielding member (710a; 710b) having a first end coupled to the integrated circuit die (701a; 701b) and a second end for coupling with a circuit board (718a; 718b), the shielding member (710a; 710b) situated at least partially between the second connector and the first connector (706a; 706b) and a capacitor. The capacitor has a first plate and a second plate. The first plate of the capacitor is configured to be coupled to ground when in use. The second plate of the capacitor is coupled to one of the ends of the shielding member (710a; 710b). The other end of the shielding member (710a; 710b) is configured to be coupled to ground when in use.

摘要翻译： 本发明涉及包括具有第一放大器（702a; 702b）和第二放大器的集成电路管芯（701a; 701b）的放大器装置。 根据本发明可以实现多赫蒂放大器。 放大器装置还包括第一连接器（706a; 706b），其具有耦合到第一放大器的第一端和用于与电路板（718a; 718b）耦合的第二端;第二连接器（708a; 708b），具有第一端 耦合到第二放大器（704a; 704b）和用于与电路板（718a; 718b）耦合的第二端，具有耦合到集成电路管芯（701a; 701b）的第一端的屏蔽构件（710a; 710b）和 用于与电路板（718a; 718b）耦合的第二端，至少部分地位于第二连接器和第一连接器（706a; 706b）之间的屏蔽构件（710a; 710b）和电容器。 电容器具有第一板和第二板。 电容器的第一板配置成在使用时与地耦合。 电容器的第二板耦合到屏蔽部件（710a; 710b）的一端。 屏蔽构件（710a; 710b）的另一端构造成在使用时与地耦合。

公开(公告)号：US08669638B2

公开(公告)日：2014-03-11

申请号：US13129936

申请日：2009-12-10

申请人： Jean Marie Boulay ,  Ayad Ghannam

发明人： Jean Marie Boulay ,  Ayad Ghannam

IPC分类号： H01L27/08 ,  H01L21/20

CPC分类号： H01L23/5389 ,  H01L23/49844 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/49052 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19051 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099

摘要： A high power semiconductor device for operation at powers greater than 5 watts for wireless applications comprises a semiconductor substrate including an active area of the high power semiconductor device, contact regions formed on the semiconductor substrate providing contacts to the active area of the high power semiconductor device, a dielectric layer formed over a part of the semiconductor substrate, a lead for providing an external connection to the high power semiconductor device and an impedance matching network formed on the semiconductor substrate between the active area of the high power semiconductor device and the lead. The impedance matching network includes conductor lines formed on the dielectric layer. The conductor lines are coupled to the contact regions for providing high power connections to the contact regions of the active area, and have a predetermined inductance for impedance matching.

摘要翻译： 用于无线应用的功率大于5瓦功率的大功率半导体器件包括：包括大功率半导体器件的有源区的半导体衬底，形成在半导体衬底上的接触区域，提供与大功率半导体器件的有源区的触点 形成在半导体衬底的一部分上的电介质层，用于提供与大功率半导体器件的外部连接的引线和形成在半导体衬底上的大功率半导体器件的有源区域和引线之间的阻抗匹配网络。 阻抗匹配网络包括形成在电介质层上的导线。 导体线耦合到接触区域，以提供与有源区域的接触区域的高功率连接，并且具有用于阻抗匹配的预定电感。

公开(公告)号：US08666340B2

公开(公告)日：2014-03-04

申请号：US12397040

申请日：2009-03-03

申请人： Ahmadreza Rofougaran ,  Maryam Rofougaran

发明人： Ahmadreza Rofougaran ,  Maryam Rofougaran

IPC分类号： H01Q11/12

CPC分类号： H03F3/211 ,  H01L23/49822 ,  H01L23/5227 ,  H01L23/66 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/19051 ,  H01L2924/3011 ,  H03F1/0277 ,  H03F3/195 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H01L2924/00 ,  H01L2224/0401

摘要： Methods and systems for on-chip impedance control to impedance match a configurable front end are disclosed and may include selectively enabling one or more amplifiers coupled to taps on a multi-tap transformer in a chip including the amplifiers. The impedances of the amplifiers may be matched to impedances of the taps on the transformer. The amplifiers may include low noise amplifiers wherein the input impedance of each of the low noise amplifiers may be different. The amplifiers may include power amplifiers wherein an output impedance of each of the power amplifiers may be different. The transformer may be coupled to an on-chip antenna, or to an antenna integrated on a package coupled to the chip. The multi-tap transformer may be integrated on the package. RF signals may be communicated via the selectively enabled amplifiers and the multi-tap transformer. The multi-tap transformer may include ferromagnetic materials integrated in the chip.

摘要翻译： 公开了用于阻抗匹配可配置前端的片上阻抗控制的方法和系统，并且可以包括选择性地启用耦合到包括放大器的芯片中的多抽头变压器上的抽头的一个或多个放大器。 放大器的阻抗可以与变压器上的抽头的阻抗匹配。 放大器可以包括低噪声放大器，其中每个低噪声放大器的输入阻抗可以不同。 放大器可以包括功率放大器，其中每个功率放大器的输出阻抗可以不同。 变压器可以耦合到片上天线，或耦合到集成在耦合到芯片的封装上的天线。 多抽头变压器可以集成在封装上。 可以经由有选择地使能的放大器和多抽头变压器来传送RF信号。 多抽头变压器可以包括集成在芯片中的铁磁材料。

公开(公告)号：US20140022020A1

公开(公告)日：2014-01-23

申请号：US13554034

申请日：2012-07-20

申请人： Peter H. Aaen ,  David J. Dougherty ,  Manuel F. Romero ,  Lakshminarayan Viswanathan

发明人： Peter H. Aaen ,  David J. Dougherty ,  Manuel F. Romero ,  Lakshminarayan Viswanathan

IPC分类号： H01L23/60 ,  H03F3/68

CPC分类号： H01L23/5227 ,  H01L23/293 ,  H01L23/49506 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/6644 ,  H01L2224/49175 ,  H01L2924/3011 ,  H03F1/0288 ,  H03F3/195 ,  H03F3/211 ,  H03F3/213 ,  H03F3/245 ,  H01L2924/00

摘要： A single semiconductor device package that reduces electromagnetic coupling between elements of a semiconductor device embodied within the package is provided. For a dual-path amplifier, such as a Doherty power amplifier, an isolation feature that separates carrier amplifier elements from peaking amplifier elements is included within the semiconductor device package. The isolation feature can take the form of a structure that is constructed of a conductive material coupled to ground and which separates the elements of the amplifier. The isolation feature can be included in a variety of semiconductor packages, including air cavity packages and overmolded packages. Through the use of the isolation feature provided by embodiments of the present invention a significant improvement in signal isolation between amplifier elements is realized, thereby improving performance of the dual-path amplifier.

摘要翻译： 提供了减少在封装内体现的半导体器件的元件之间的电磁耦合的单个半导体器件封装。 对于诸如Doherty功率放大器的双通道放大器，将载波放大器元件与峰值放大器元件分离的隔离特征包括在半导体器件封装内。 隔离特征可以采取由耦合到地并且分离放大器的元件的导电材料构成的结构的形式。 隔离特征可以包括在各种半导体封装中，包括气腔封装和包覆成型的封装。 通过使用由本发明的实施例提供的隔离特征，实现放大器元件之间的信号隔离的显着改进，从而提高双路放大器的性能。

公开(公告)号：US20140016277A1

公开(公告)日：2014-01-16

申请号：US13939066

申请日：2013-07-10

申请人： Skyworks Solutions, Inc.

发明人： Howard E. Chen ,  Matthew Sean Read ,  Hoang Mong Nguyen ,  Anthony James LoBianco ,  Guohao Zhang ,  Dinhphuoc Vu Hoang

IPC分类号： H05K1/18 ,  G06F17/50

CPC分类号： G06F17/5072 ,  H01L21/561 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/552 ,  H01L23/585 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/1531 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K1/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Aspects of the present disclosure relate to determining a layout of a racetrack that forms part of an RF isolation structure of a packaged module and the resulting RF isolation structures. Locations of where the racetrack can be adjusted (for example, narrowed) and/or removed without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, a portion of the racetrack can be removed to create a break and/or a portion of the racetrack can be narrowed in a selected area.

摘要翻译： 本公开的方面涉及确定构成封装模块的RF隔离结构的一部分的跑道的布局以及所得到的RF隔离结构。 可以识别可以调整（例如，变窄）和/或移除赛道的位置，而不会显着降低RF隔离结构的EMI性能。 在某些实施例中，可以移除跑道的一部分以产生断路，和/或可以在选定的区域中使跑道的一部分变窄。

公开(公告)号：US20140014969A1

公开(公告)日：2014-01-16

申请号：US13803515

申请日：2013-03-14

申请人： Tetsuo Kunii ,  Seiichi Tsuji ,  Motoyoshi Koyanagi

发明人： Tetsuo Kunii ,  Seiichi Tsuji ,  Motoyoshi Koyanagi

IPC分类号： H01L27/08 ,  H01L29/16

CPC分类号： H01L27/08 ,  H01L23/4824 ,  H01L23/66 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0207 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7786 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05554 ,  H01L2224/0612 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49 ,  H01L2924/16195 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device includes: a package; an input matching circuit and an output matching circuit in the package; and transistor chips between the input matching circuit and the output matching circuit in the package. Each transistor chip includes a semiconductor substrate having long sides and short sides that are shorter than the long sides, and a gate electrode, a drain electrode and a source electrode on the semiconductor substrate. The gate electrode has gate fingers arranged along the long sides of the semiconductor substrate and a gate pad commonly connected to the gate fingers and connected to the input matching circuit via a first wire. The drain electrode is connected to the output matching circuit via a second wire. The long sides of the semiconductor substrates of the transistor chips are oblique with respect to an input/output direction extending from the input matching circuit to the output matching circuit.

摘要翻译： 半导体器件包括：封装; 封装中的输入匹配电路和输出匹配电路; 和输入匹配电路和封装中的输出匹配电路之间的晶体管芯片。 每个晶体管芯片包括具有比长边短的长边和短边的半导体衬底，以及半导体衬底上的栅电极，漏电极和源电极。 栅电极具有沿着半导体衬底的长边布置的栅极指，以及通常连接到栅极指并经由第一布线连接到输入匹配电路的栅极焊盘。 漏电极通过第二线连接到输出匹配电路。 晶体管芯片的半导体衬底的长边相对于从输入匹配电路延伸到输出匹配电路的输入/输出方向倾斜。

公开(公告)号：US08629495B2

公开(公告)日：2014-01-14

申请号：US12937701

申请日：2009-04-15

申请人： Lukas Frederik Tiemeijer

发明人： Lukas Frederik Tiemeijer

IPC分类号： H01L29/66

CPC分类号： H01L23/4824 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/4238 ,  H01L29/7835 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19051 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The invention relates to a field-effect transistor having a higher efficiency than the known field-effect transistors, in particular at higher operating frequencies. This is achieved by electrically connecting sources of a plurality of main current paths by means of a strap line (SL) being inductively coupled to a gate line (Gtl) and/or a drain line (Drnl) for forming an additional RF-return current path parallel to the RF-return current path in a semiconductor body (SB). The invention further relates to a field-effect transistor package, a power amplifier, a multi-stage power amplifier and a base station comprising such a field-effect transistor.

摘要翻译： 本发明涉及具有比已知的场效应晶体管更高效率的场效应晶体管，特别是在较高的工作频率下。 这通过电感耦合到栅极线（Gt1）和/或漏极线（Drn1）的绑带线（SL）电连接多个主电流路径的源来实现，用于形成额外的RF返回电流 路径平行于半导体本体（SB）中的RF返回电流路径。 本发明还涉及场效应晶体管封装，功率放大器，多级功率放大器和包括这种场效应晶体管的基站。

公开(公告)号：US20130309990A1

公开(公告)日：2013-11-21

申请号：US13898784

申请日：2013-05-21

申请人： TELEKOM MALAYSIA BERHAD

发明人： Syahrizal SALLEH ,  Mohamad Faizal HASHIM ,  Zulkalnain Mohd YUSSOF

IPC分类号： H04B1/16

CPC分类号： H04B1/16 ,  H01L23/66 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L2223/6644 ,  H01L2224/29007 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32013 ,  H01L2224/32145 ,  H01L2224/48157 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2924/00014 ,  H04B1/005 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Disclosed is a method of adjusting the receive frequency of a radio frequency (RF) receiver die (4), the RF receiver die (4) comprising a mixer (8) with an associated local oscillator (10) and a first low-noise amplifier (6) arranged to operate over a first frequency range, the method comprising affixing a second low-noise amplifier (40) arranged to operate over a second frequency range to the RF receiver die (4).

摘要翻译： 公开了一种调节射频（RF）接收器管芯（4）的接收频率的方法，RF接收器管芯（4）包括具有相关本地振荡器（10）的混频器（8）和第一低噪声放大器 （6），其被布置成在第一频率范围上操作，所述方法包括将布置成在第二频率范围上操作的第二低噪声放大器（40）附接到RF接收器管芯（4）。

公开(公告)号：US20130300614A1

公开(公告)日：2013-11-14

申请号：US13978620

申请日：2012-01-12

申请人： Yuji Machida

发明人： Yuji Machida

IPC分类号： H01Q1/22

CPC分类号： H01Q1/22 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2924/15311 ,  H01L2924/3025

摘要： There is provided a high frequency module including a part mounted on one surface of a board; an electrode for connecting the part formed on the one surface and an apparatus for mounting the high frequency module; and a first insulating layer, which is formed on the one surface and is configured to cover the part, wherein the electrode is formed on a surface of the first insulating layer such that at least a part of the electrode and the first insulating layer are successively formed.

摘要翻译： 提供了包括安装在板的一个表面上的部件的高频模块; 用于连接形成在一个表面上的部分的电极和用于安装高频模块的装置; 以及第一绝缘层，其形成在所述一个表面上并被构造成覆盖所述部分，其中所述电极形成在所述第一绝缘层的表面上，使得所述电极和所述第一绝缘层的至少一部分相继 形成。