公开(公告)号：US07184640B2

公开(公告)日：2007-02-27

申请号：US10787349

申请日：2004-02-25

Applicant: David P. Bour ,  Scott W. Corzine

Inventor： David P. Bour ,  Scott W. Corzine

IPC: G02B6/10

CPC classification number: B82Y20/00 ,  G02B6/131 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/34366 ,  H01S2301/173 ,  H01S2304/04

Abstract: The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

Abstract translation: 该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。 生长掩模位于半导体表面上并限定细长的生长窗。 光波导核心台面位于生长窗口中，具有梯形横截面形状。 包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。 这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面， 低于第一生长温度。

公开(公告)号：US20060274793A1

公开(公告)日：2006-12-07

申请号：US10595283

申请日：2004-09-16

Applicant: Bocang QIU

Inventor： Bocang QIU

IPC: H01S3/10 ,  H01S5/00

CPC classification number: B82Y20/00 ,  G02B6/122 ,  G02B6/1228 ,  H01S5/0655 ,  H01S5/2231 ,  H01S5/3215 ,  H01S5/3407 ,  H01S5/34366 ,  H01S2301/18

Abstract: A semiconductor laser device incorporates a beam control layer (42, 41) for reducing far field and beam divergence. Within the beam control layer, a physical property of the semiconductor material varies as a function of depth through, the beam control layer, by provision of a first sub-layer (42) in which the property varies gradually from a first level to a second level, and a second sub-layer (41) in which the property varies from said second level to a third level. In the preferred arrangement, the conduction band edge of the semiconductor has a V-shaped profile through the beam control layer.

Abstract translation: 半导体激光器件包括用于减少远场和光束发散的光束控制层（42,41）。 在光束控制层内，半导体材料的物理性质通过提供第一子层（42）的深度通过光束控制层而变化，其中性质从第一级逐渐变化到第二级 级别和第二子层（41），其中所述属性从所述第二级别变化到第三级别。 在优选的布置中，半导体的导带边缘通过光束控制层具有V形轮廓。

公开(公告)号：US20060126689A1

公开(公告)日：2006-06-15

申请号：US11265712

申请日：2005-11-02

Applicant: Sung Hong ,  Jin Lee ,  Jin Kim ,  Ho Kwack ,  Dae Oh

Inventor： Sung Hong ,  Jin Lee ,  Jin Kim ,  Ho Kwack ,  Dae Oh

IPC: H01S5/00

CPC classification number: H01S5/227 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/2215 ,  H01S5/2216 ,  H01S5/2275 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34366

Abstract: Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.

公开(公告)号：US20050185909A1

公开(公告)日：2005-08-25

申请号：US10787349

申请日：2004-02-25

Applicant: David Bour ,  Scott Corzine

Inventor： David Bour ,  Scott Corzine

IPC: G02B6/10 ,  G02B6/13 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/343

CPC classification number: B82Y20/00 ,  G02B6/131 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/3211 ,  H01S5/34313 ,  H01S5/34366 ,  H01S2301/173 ,  H01S2304/04

Abstract: The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.

Abstract translation: 该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。 生长掩模位于半导体表面上并限定细长的生长窗。 光波导核心台面位于生长窗口中，具有梯形横截面形状。 包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。 这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面， 低于第一生长温度。

公开(公告)号：US06853015B2

公开(公告)日：2005-02-08

申请号：US10173753

申请日：2002-06-19

Applicant: Tomonobu Tsuchiya

Inventor： Tomonobu Tsuchiya

IPC: H01S5/343 ,  H01L21/205 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/34 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L35/26

CPC classification number: B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02581 ,  H01S5/2223 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34366

Abstract: A modulation doped multiple quantum well structure having a steep Zn profile of several nm by the balance between an increase in a Zn concentration and a decrease in Zn diffusion by using metal organic vapor phase epitaxy using Zn, in which an InGaAlAs quaternary alloy is used and the Zn concentration and the range for crystal composition are defined to equal to or less than the critical concentration at which Zn diffuses abruptly in each of InGaAlAs compositions.

Abstract translation: 通过使用使用InGaAlAs四元合金的Zn的使用金属有机气相外延的Zn浓度的增加和Zn扩散的减少之间的平衡，具有几nm的陡的Zn分布的调制掺杂多量子阱结构，以及 Zn浓度和晶体组成的范围被定义为等于或小于在每个InGaAlAs组合物中Zn扩散的临界浓度。

公开(公告)号：US20030202551A1

公开(公告)日：2003-10-30

申请号：US10423222

申请日：2003-04-25

Inventor： Tsuyoshi Nagatake ,  Shoji Hirata

IPC: H01S005/00

CPC classification number: B82Y20/00 ,  H01S5/164 ,  H01S5/3403 ,  H01S5/34313 ,  H01S5/34366

Abstract: A semiconductor laser device is one of AlGaInAs semiconductor laser devices, and has a multi-layer structure with a n-GaAs substrate on which a n-Al0.3Ga0.7As buffer layer, a n-Al0.47Ga0.53As clad layer, active layer portion, p-Al0.47Ga0.53As clad layer and p-GaAs cap layer are formed. The active layer portion is configured as a multi-layer structure including (Al0.37Ga0.63)0.97In0.03As light guide layer, Al0.1Ga0.9As active layer and (Al0.37Ga0.63)0.97In0.03As light guide layer. By using the AlGaInAs layer to which In is added is used as the light guide layers, the active layer is under compressive strain. Accordingly, the lattice constant of the active layer at the laser emitting edge becomes smaller due to a force from the adjacent light guide layers. The band gap energy of the active layer near the laser emitting edge becomes larger than the inside of laser device, thereby forming the window structure.

Abstract translation: 半导体激光器件是AlGaInAs半导体激光器件之一，并且具有n-GaAs衬底的多层结构，其中n-Al0.3Ga0.7As缓冲层，n-Al0.47Ga0.53As覆层，具有活性的 形成p-Al0.47Ga0.53As覆层和p-GaAs覆盖层。 有源层部分被构造为包括（Al 0.37 Ga 0.63）0.97 In 0.03导光层，Al 0.1 Ga 0.9 As有源层和（Al 0.37 Ga 0.63）0.97 In 0.03导光层的多层结构 。 通过使用添加了In的AlGaInAs层作为导光层，活性层处于压应变状态。 因此，激光发射边缘处的有源层的晶格常数由于来自相邻导光层的力而变小。 激光发射边缘附近的有源层的带隙能量大于激光器件的内部，从而形成窗口结构。

公开(公告)号：US6111904A

公开(公告)日：2000-08-29

申请号：US2401

申请日：1998-01-02

Applicant: Shinji Takano

Inventor： Shinji Takano

IPC: H01S5/00 ,  H01S5/062 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/22 ,  H01S5/34 ,  H01S5/06209 ,  H01S5/1053 ,  H01S5/106 ,  H01S5/12 ,  H01S5/2077 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/3211 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/34306 ,  H01S5/34366

Abstract: The present invention provides another active layer structure provided in a light emission device for emitting a light with a predetermined wavelength. The active layer structure comprises a multiple quantum well structure and at least a second well layer. The multiple quantum well structure comprises alternating laminations of first well layers showing electroluminescence and potential barrier layers. The first well layers have a first set of energy band gaps which are uniform and corresponds to the predetermined wavelength, provided that energy band gap is defined as a difference between a ground level of electrons in conduction band and a ground level of holes in valence band. The second well layer is provided within any of the potential barer layers so that the second well layer is separated via the potential barrier layers from the first well layers. The second well layer has a second energy band gap in a range which is above the first set of energy band gaps and below a set of forbidden band widths of the potential barrier layers. The range of the second energy band gaps is defined so that the second well layer exhibits carrier accumulations and no electro-luminescence to thereby ensure that carriers accumulated in the second well layer are injected into the first well layers when the first well layers are deficient in carriers for the electro-luminescence.

Abstract translation: 本发明提供了一种设置在用于发射具有预定波长的光的发光装置中的另一有源层结构。 有源层结构包括多量子阱结构和至少第二阱层。 多量子阱结构包括显示电致发光和势垒层的第一阱层的交替层叠。 第一阱层具有均匀的并且对应于预定波长的第一组能带隙，只要能带隙被定义为导带中的电子的地电位与价带中的空穴的地平面之间的差 。 第二阱层设置在任何潜在的覆盖层内，使得第二阱层经由势垒层与第一阱层分离。 第二阱层具有在第一组能带隙之上并且低于势垒层的一组禁带宽度的范围内的第二能带隙。 定义第二能带隙的范围，使得第二阱层表现出载流子积聚和无电致发光，从而确保当第一阱层缺陷时将积聚在第二阱层中的载流子注入到第一阱层中 载体用于电致发光。

公开(公告)号：US5790578A

公开(公告)日：1998-08-04

申请号：US625345

申请日：1996-04-01

Applicant: Shinji Takano

Inventor： Shinji Takano

IPC: H01S5/00 ,  H01S5/062 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/22 ,  H01S5/34 ,  H01S5/06209 ,  H01S5/1053 ,  H01S5/106 ,  H01S5/12 ,  H01S5/2077 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/3211 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/34306 ,  H01S5/34366

Abstract: The present invention provides another active layer structure provided in a light emission device for emitting a light with a predetermined wavelength. The active layer structure comprises a multiple quantum well structure and at least a second well layer. The multiple quantum well structure comprises alternating laminations of first well layers showing electroluminescence and potential barrier layers. The first well layers have a first set of energy band gaps which are uniform and correspond to the predetermined wavelength. An energy band gap is defined as a difference between a ground level of electrons in conduction band and a ground level of holes in valence band. The second well layer is provided within any of the potential barrier layers so that the second well layer is separated by the potential barrier layers from the first well layers. The second well layer has a second energy band gap in a range which is above the first set of energy band gaps and below a set of forbidden band widths of the potential barrier layers. The range of the second energy band gaps is defined so that the second well layer exits carrier accumulations and no electroluminescence to thereby ensure that carriers accumulated in the second well layer are injected into the first well layers when the first well layers are deficient in carriers for the electro-luminescence.

Abstract translation: 本发明提供了一种设置在用于发射具有预定波长的光的发光装置中的另一有源层结构。 有源层结构包括多量子阱结构和至少第二阱层。 多量子阱结构包括显示电致发光和势垒层的第一阱层的交替层叠。 第一阱层具有均匀且对应于预定波长的第一组能带隙。 能带隙被定义为导带中的电子的地电平和价带中的空穴的地平面之间的差。 第二阱层设置在任何势垒层内，使得第二阱层被势垒层与第一阱层隔开。 第二阱层具有在第一组能带隙之上并且低于势垒层的一组禁带宽度的范围内的第二能带隙。 定义第二能带隙的范围，使得第二阱层离开载流子积聚并且不产生电致发光，从而确保当第一阱层在载流子不足时将积聚在第二阱层中的载流子注入到第一阱层中 电致发光。

公开(公告)号：US4819036A

公开(公告)日：1989-04-04

申请号：US60869

申请日：1987-05-04

Applicant: Takao Kuroda ,  Akiyoshi Watanabe ,  Shinji Tsuji ,  Akio Ohishi ,  Hiroyoshi Matsumura

Inventor： Takao Kuroda ,  Akiyoshi Watanabe ,  Shinji Tsuji ,  Akio Ohishi ,  Hiroyoshi Matsumura

IPC: H01S5/00 ,  B82Y20/00 ,  H01L29/15 ,  H01L29/80 ,  H01L31/10 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L29/155 ,  H01S5/343 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/3436 ,  H01S5/34366

Abstract: A novel method which enables a quaternary III-V group crystal to be readily formed on a III-V group crystal so that the former crystal lattice-matches with the latter crystal. More specifically, it is easy to produce a superlattice structure on a III-V group crystal substrate, the superlattice structure consisting of a first III-V group (hereinafter referred to as "III.sup.1 -V.sup.1 ") binary crystal layer which lattice-matches with the substrate, and a III-V group (III.sup.1 -III.sup.2 -V.sup.2) ternary crystal layer which similarly lattice-matches with the substrate. It is possible to obtain an even more stable superlattice layer by selecting the ratio between the film thickness of the (III.sup.1 -V.sup.1) crystal and the film thickness of the (III.sup.1 -III.sup.2 -V.sup.2) crystal so that, when the superlattice structure is mixed-crystallized spontaneously or by means of impurity doping, the mixed-crystallized composition lattice-matches with the previous crystal.

Abstract translation: PCT No.PCT / JP86 / 00443 Sec。 371日期：1987年5月4日 102（e）日期1987年5月4日PCT提交1986年8月29日PCT公布。 第WO87 / 015222B号公开 日期：1987年3月12日。一种使III-V族晶体易于在III-V族晶体上形成的新方法，使得前一晶格与后一晶体匹配。 更具体地说，容易在III-V族晶体基板上产生超晶格结构，超晶格结构由与第一III-V族（以下称为“III1-V1”）二元晶体层 基板和与基板类似地匹配的III-V族（III1-III2-V2）三元晶体层。 通过选择（III1-V1）晶体的膜厚与（III1-III2-V2）晶体的膜厚之间的比例，可以获得更稳定的超晶格层，使得当超晶格结构混合时 自发结晶或通过杂质掺杂，混合结晶的组合物与先前的晶体匹配。

公开(公告)号：US20180076597A1

公开(公告)日：2018-03-15

申请号：US15685009

申请日：2017-08-24

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroyuki FUKUMIZU ,  Tsutomu Kakuno

IPC: H01S5/34 ,  H01S5/022 ,  H01S5/10 ,  H01S5/062 ,  H01S5/343

CPC classification number: H01S5/3402 ,  H01S5/0287 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34366 ,  H01S2301/163

Abstract: A quantum cascade laser device includes a substrate, a semiconductor stacked body and a first electrode. The semiconductor stacked body includes an active layer and a first clad layer. The active layer is configured to emit infrared laser light by an intersubband optical transition. A ridge waveguide is provided in the semiconductor stacked body. A distributed feedback region is provided along a first straight line. The ridge waveguide extends along the first straight line. The first electrode is provided at an upper surface of the distributed feedback region. A diffraction grating is arranged along the first straight line. The distributed feedback region includes a an increasing region where a length of the diffraction grating along a direction orthogonal to the first straight line increases from one end portion of the distributed feedback region toward another end portion of the distributed feedback region.