公开(公告)号：US5536193A

公开(公告)日：1996-07-16

申请号：US264386

申请日：1994-06-23

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/304 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A field emitter comprising an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable conductive metals include titanium, tungsten, gold and graphite. The method includes disposing the wide band gap material on a substrate, disposing the conductive metal on the wide band gap material, and etching the conductive metal to expose wide band gap emission areas. The emission areas are well suited for large area flat panel displays.

Abstract translation: 公开了一种场致发射器，其包括与导电金属的平坦表面接触并从其突出的暴露的宽带隙发射区域，以及制造方法。 合适的宽带隙材料（2.5-7.0电子伏特）包括金刚石，氮化铝和氮化镓; 合适的导电金属包括钛，钨，金和石墨。 该方法包括将宽带隙材料设置在基板上，将导电金属设置在宽带隙材料上，蚀刻导电金属以暴露宽带隙发射区域。 发射区域非常适合大面积平板显示器。

公开(公告)号：US5500905A

公开(公告)日：1996-03-19

申请号：US851841

申请日：1992-03-16

Applicant: Gale L. Martin ,  James A. Pittman ,  Mosfeq Rashid

Inventor： Gale L. Martin ,  James A. Pittman ,  Mosfeq Rashid

IPC: G06K9/32 ,  G06K9/72 ,  G06K9/62

CPC classification number: G06K9/32 ,  G06K9/72 ,  G06K2209/01

Abstract: A multi-layered pattern recognition neural network (30) is disclosed that comprises an input layer (50) that is operable to be mapped onto an input space that includes a scan window (32). Two hidden layers (54) and (58) map the input space to an output layer (34). The hidden layers utilize a local receptor field architecture and store representations of objects within the scan window (32) for mapping into one of a plurality of output nodes. Further, the output layer (34) is also operable to store representations of desired distances between the center of the scan window (32) and the next adjacent object thereto and also the distance between the center of the scan window (32) and the center of the current object. A scanning system can then utilize the information regarding the distance to the next adjacent object, which is stored in an output vector (40) to incrementally jump to the center of the next adjacent character rather than scan the entire distance therebetween. This is referred to as a saccade operation. Once the scan window ( 32) is disposed over the next object, a corrective saccade can be performed by utilizing the information output by the neural network (30) relating to the distance between the center of the scan window (32) and the current character. This information is output as an output vector (38) from the neural network (30).

Abstract translation: 公开了一种多层模式识别神经网络（30），其包括可操作以映射到包括扫描窗口（32）的输入空间的输入层（50）。 两个隐藏层（54）和（58）将输入空间映射到输出层（34）。 隐藏层利用本地受体场结构并存储扫描窗口（32）内的对象的表示，用于映射到多个输出节点之一。 此外，输出层（34）还可操作以存储扫描窗（32）的中心与下一相邻对象之间的期望距离的表示，以及扫描窗（32）的中心与中心之间的距离 的当前对象。 然后，扫描系统可以利用存储在输出向量（40）中的与下一个相邻对象的距离的信息来递增地跳到下一相邻字符的中心，而不是扫描它们之间的整个距离。 这被称为扫视行动。 一旦扫描窗口（32）被布置在下一个物体上，则可以通过利用由神经网络（30）输出的与扫描窗口（32）的中心与当前字符之间的距离相关的信息来执行校正扫视 。 该信息作为来自神经网络（30）的输出向量（38）输出。

公开(公告)号：US5403784A

公开(公告)日：1995-04-04

申请号：US8044

申请日：1993-01-29

Applicant: Seyed H. Hashemi ,  Michael A. Olla ,  John C. Parker

Inventor： Seyed H. Hashemi ,  Michael A. Olla ,  John C. Parker

IPC: H01L21/48 ,  H01L23/057 ,  H01L23/36 ,  H01L23/495 ,  H01L23/64 ,  H01L25/18 ,  H01L21/58 ,  H01L21/52 ,  H01L21/56 ,  H01L21/60

CPC classification number: H01L23/057 ,  H01L21/4842 ,  H01L23/36 ,  H01L23/49537 ,  H01L23/642 ,  H01L24/49 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2224/49109 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15312 ,  H01L2924/16195 ,  H01L2924/1627 ,  H01L2924/19041 ,  H01L2924/3011 ,  Y10T29/49121

Abstract: A process for manufacturing a pin grid array package providing a plurality of electrical input and/or output connections using a plurality of stacked, but spaced apart, separate leadframes which are preformed and include a plurality of electrical leads having first and second ends for providing a plurality of different connections. An insulating layer is positioned between adjacent leadframes and the package is bonded together.

Abstract translation: 一种用于制造引脚格栅阵列封装的工艺，其使用预先形成的多个堆叠但间隔开的分离引线框提供多个电输入和/或输出连接，并且包括具有第一和第二端的多个电引线，用于提供 多个不同的连接。 绝缘层位于相邻的引线框架之间，封装结合在一起。

公开(公告)号：US5393573A

公开(公告)日：1995-02-28

申请号：US730744

申请日：1991-07-16

Applicant: Colin A. MacKay

Inventor： Colin A. MacKay

IPC: C23C14/14 ,  C23C14/48 ,  C23C14/54 ,  B05D3/06

CPC classification number: C23C14/48

Abstract: An improved method for inhibiting tin whisker growth involving the implantation in a tin coating of an ion or ions selected from the group Pb, Bi, Sb, Tl, Cu, Ag, Au, Cd, Mo, Cr, W, Ar, He, Ne and Kr.

Abstract translation: 一种用于抑制锡晶须生长的改进方法，其涉及将Pb，Bi，Sb，Tl，Cu，Ag，Au，Cd，Mo，Cr，W，Ar，He， Ne和Kr。

公开(公告)号：US5347086A

公开(公告)日：1994-09-13

申请号：US856501

申请日：1992-03-24

Applicant: Curtis N. Potter ,  David A. Gibson ,  Uttam S. Ghoshal

Inventor： Curtis N. Potter ,  David A. Gibson ,  Uttam S. Ghoshal

IPC: H01L23/485 ,  H01L23/66 ,  A05K1/00

CPC classification number: H01L24/10 ,  H01L23/66 ,  H01L24/13 ,  H01L2223/6622 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351

Abstract: A coaxial bump for connecting a die to a substrate includes a center post and a ground ring surrounding and shielding the center post. The center post may be a center conductor line, and the ground ring may be generally torus-shaped, nearly closed or completely closed. The coaxial bump provides very low crosstalk in chip-to-substrate interconnections and provides a constant impedance with negligible inductive discontinuity.

Abstract translation: 用于将管芯连接到衬底的同轴突起包括围绕中心柱的中心柱和接地环。 中心柱可以是中心导体线，并且接地环可以是大致圆环形，几乎闭合或完全封闭。 同轴突起在芯片到衬底互连中提供非常低的串扰，并提供具有可忽略的感应不连续性的恒定阻抗。

公开(公告)号：US5344795A

公开(公告)日：1994-09-06

申请号：US949189

申请日：1992-09-22

Applicant: Seyed H. Hashemi ,  Michael A. Olla ,  Thomas P. Dolbear ,  Richard D. Nelson

Inventor： Seyed H. Hashemi ,  Michael A. Olla ,  Thomas P. Dolbear ,  Richard D. Nelson

IPC: H01L21/56 ,  H01L23/433 ,  H01L21/58 ,  H01L21/60

CPC classification number: H01L21/565 ,  H01L23/4334 ,  H01L2224/48227 ,  H01L25/0655 ,  Y10T29/49121

Abstract: A process for making thermosetting or thermoplastic encapsulated integrated circuit having a heat exchanger in which one end of the heat exchanger is encapsulated in the housing adjacent to the integrated circuit and the other end is exposed to the environment beyond the housing portion. The process of making includes molding a heat exchanger into a thermosetting or thermoplastic package utilizing a preformed heat exchanger having a dissolvable or removable material which serves as a seal block during the molding operation. A plurality of thermally conductive heat exchanger elements are provided for providing the desired thermal performance while reducing the thermal stresses in the package.

Abstract translation: 一种用于制造具有热交换器的热固性或热塑性封装集成电路的方法，其中热交换器的一端封装在与集成电路相邻的壳体中，另一端暴露于外壳外部的环境中。 制造方法包括使用具有可溶性或可去除材料的预成型热交换器将热交换器成型为热固性或热塑性包装，其在成型操作期间用作密封块。 提供多个导热热交换器元件以提供期望的热性能，同时减少包装中的热应力。

公开(公告)号：US5331172A

公开(公告)日：1994-07-19

申请号：US128975

申请日：1993-09-29

Applicant: Nalin Kumar ,  Chenggang Xie ,  Rama R. Goruganthu ,  Mohammed K. Ghazi

Inventor： Nalin Kumar ,  Chenggang Xie ,  Rama R. Goruganthu ,  Mohammed K. Ghazi

IPC: H01L21/60 ,  H01L23/485 ,  H05K3/00 ,  H01J37/30

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01J2201/30457 ,  H01L2224/11822 ,  H01L2224/13099 ,  H01L2224/13109 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107 ,  H05K3/0023 ,  H05K3/0041

Abstract: Ionized metal cluster beam deposition of metal bumps on substrates such as multi-chip modules and integrated circuit chips is enhanced. The present invention discloses wet etching techniques for removing unwanted metal deposited on the substrate around bumps, multiple sources for depositing alloyed (tin-lead) bumps with constant composition, and single or multiple sources for directing a cluster beam through an aperture to deposit metal on a substrate and directing an ion beam at the aperture to remove metal deposited therein.

Abstract translation: 提高了诸如多芯片模块和集成电路芯片的衬底上的金属凸块的电离金属簇束沉积。 本发明公开了用于去除沉积在凸起周围的衬底上的不需要的金属的湿蚀刻技术，用于沉积具有恒定组成的合金化（锡 - 铅）凸块的多个源以及用于引导聚束束穿过孔以将金属沉积在其上的单个或多个源 一个衬底，并将一个离子束引导到该孔处以除去沉积在其中的金属。

公开(公告)号：US5312514A

公开(公告)日：1994-05-17

申请号：US52958

申请日：1993-04-23

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H01J9/02 ,  H05K3/00 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J2201/30407 ,  H01J2201/30457 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107 ,  H05K3/0023 ,  H05K3/0041

Abstract: Method of making a field emitter device with submicron low work function emission tips without using photolithography. The method includes depositing in situ by evaporating or sputtering a discontinuous etch mask comprising randomly located discrete nuclei. In one embodiment an ion etch is applied to a low work function material covered by a discontinuous mask to form valleys in the low work function material with pyramid shaped emission tips therebetween. In another embodiment an ion etch is applied to an electrically conductive base material covered by a discontinuous mask to form valleys in the base material with pyramid shaped base tips therebetween. The base material is then coated with a low work function material to form emission tips thereon.

Abstract translation: 制造具有亚微米低功函数发射尖端而不使用光刻的场发射极器件的方法。 该方法包括通过蒸发或溅射包含随机定位的离散核的不连续蚀刻掩模来原位沉积。 在一个实施例中，离子蚀刻被施加到由不连续掩模覆盖的低功函数材料，以在其中具有金字塔形发射尖端的低功函数材料中形成谷。 在另一个实施例中，离子蚀刻被施加到由不连续掩模覆盖的导电基底材料，以在基底材料中形成具有金字塔形基底尖端的谷部。 然后用低功函数材料涂覆基材以在其上形成发射末端。

公开(公告)号：US5298288A

公开(公告)日：1994-03-29

申请号：US987502

申请日：1992-12-07

Applicant: John W. Curry, II ,  Douglas A. Pietila

Inventor： John W. Curry, II ,  Douglas A. Pietila

IPC: B05D3/02 ,  C04B41/00 ,  C04B41/48 ,  C04B41/80 ,  C04B41/83 ,  C09J179/08 ,  H01L21/48 ,  H05K3/00 ,  B05D5/12

CPC classification number: C04B41/009 ,  B05D3/0254 ,  C04B41/0072 ,  C04B41/488 ,  C04B41/80 ,  C04B41/83 ,  C09J179/08 ,  H01L21/481 ,  C04B2111/00844 ,  C04B2111/92 ,  H05K3/0091

Abstract: A porous substrate curtain coated with a single coating of a liquid dielectric that is cured into a well adhering film at least 15 microns thick with a uniformity of less than 5 microns. The substrate is cleaned to remove contaminants, heated to remove moisture, curtain coated with a single coating of a viscous heat curable liquid dielectric such as polyimide, and heated to cure the dielectric by increasing the temperature at most 15.degree. C. per minute to a predetermined cure temperature not exceeding 450.degree. C. The invention is well suited for fabricating a dielectric layer in a high density multichip module.

Abstract translation: 涂覆有液体电介质的单个涂层的多孔基底幕，其被固化成至少15微米厚的均匀度小于5微米的良好粘附的膜。 清洁基底以除去污染物，加热以除去水分，用单一涂层的粘性可热固化液体电介质如聚酰亚胺帘幕涂布，并加热以通过将每分钟最高15℃的温度升高至 预定的固化温度不超过450℃。本发明非常适用于制造高密度多芯片模块中的介电层。

公开(公告)号：US5272309A

公开(公告)日：1993-12-21

申请号：US822273

申请日：1992-01-17

Applicant: Rama R. Goruganthu ,  Philip J. Spletter

Inventor： Rama R. Goruganthu ,  Philip J. Spletter

IPC: B23K26/06 ,  B23K26/067 ,  B23K26/32 ,  H01S3/093 ,  H01S3/109 ,  B23K26/00

CPC classification number: H01S3/109 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/067 ,  H01S3/0931 ,  H01S3/2383

Abstract: A first laser beam and a second laser beam with a longer wavelength than the first laser beam are directed at a first metal member in contact with a second metal member. At the ambient temperature the first member has high absorption of energy from the first laser beam but low absorption of energy from the second laser beam. As the first member absorbs energy from the first laser beam the temperature of the first member increases and the reflectivity of the first member decreases so that the first member has high absorption of energy from the second laser beam. The first member then absorbs energy from the second laser beam, the temperature of the first member further increases and at least one of the members melts. After discontinuing the laser beams a solid bond forms between the members.

Abstract translation: 具有比第一激光束长的波长的第一激光束和第二激光束被引导到与第二金属部件接触的第一金属部件。 在环境温度下，第一构件具有来自第一激光束的高能量吸收，但是来自第二激光束的能量吸收低。 当第一构件从第一激光束吸收能量时，第一构件的温度增加，并且第一构件的反射率减小，使得第一构件具有来自第二激光束的高能量吸收。 第一构件然后从第二激光束吸收能量，第一构件的温度进一步增加，并且至少一个构件熔化。 在停止激光束之后，在构件之间形成固体粘结。