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    Immersion cooling coolant and electronic device using this coolant
    62.
    发明授权
    Immersion cooling coolant and electronic device using this coolant 失效
    浸入式冷却液和使用这种冷却剂的电子设备

    公开(公告)号：US5349499A

    公开(公告)日：1994-09-20

    申请号：US53452

    申请日：1993-04-28

    申请人： Mitsutaka Yamada ,  Kishio Yokouchi ,  Nobuo Kamehara ,  Koichi Niwa

    发明人： Mitsutaka Yamada ,  Kishio Yokouchi ,  Nobuo Kamehara ,  Koichi Niwa

    IPC分类号： H01L23/427 ,  H05K7/20

    CPC分类号： H01L23/427 ,  H01L2924/0002

    摘要： A coolant for cooling a semiconductor element by direct immersion, cooling, which has an improved cooling capability, is disclosed. The coolant comprises a low boiling point fluorocarbon having a boiling point of 30.degree. C. to 100.degree. C. and a high boiling point fluorocarbon having a boiling point higher than that of the low boiling point fluorocarbon by at least 100.degree. C.; an amount of the high boiling point fluorocarbon being less than 20% by volume, based on the volume of the low boiling point fluorocarbon.

    摘要翻译： 公开了一种用于通过直接浸入，冷却来冷却半导体元件的冷却剂，其具有改进的冷却能力。 冷却剂包括沸点为30℃至100℃的低沸点碳氟化合物和沸点高于低沸点碳氟化合物的沸点至少为100℃的高沸点碳氟化合物; 基于低沸点碳氟化合物的体积，高沸点碳氟化合物的量小于20体积％。

    High density interconnections with nanowiring
    65.
    发明授权
    High density interconnections with nanowiring 失效
    具有纳米线的高密度互连

    公开(公告)号：US07504014B2

    公开(公告)日：2009-03-17

    申请号：US11080195

    申请日：2005-03-15

    申请人： Michael G. Lee ,  Kishio Yokouchi

    发明人： Michael G. Lee ,  Kishio Yokouchi

    IPC分类号： C25D5/02

    CPC分类号： H01L21/76838 ,  B81C1/0038 ,  B82Y10/00 ,  H01L21/288 ,  H01L51/0048 ,  H05K3/1266 ,  H05K3/249 ,  H05K2201/026 ,  H05K2203/105 ,  H05K2203/135

    摘要： The present invention generally relates to circuits on the nanotechnology scale. Specifically, it is directed to methods of fabricating carbon nanotube-based (i.e., CNT-based) circuits. The method involves providing a mixture of carbon nanotubes that is substantially disaggregated and patterning carbon nanotubes through the use of electrostatic forces. Carbon nanotubes in the mixture are typically disaggregated through the introduction of positive charge on the individual nanotubes. The patterning of the carbon nanotubes is typically accomplished using electrostatic attraction between pre-formed metal lines and the charged carbon nanotubes.

    摘要翻译： 本发明一般涉及纳米技术规模的电路。 具体地，涉及制造基于碳纳米管（即基于CNT的）电路的方法。 该方法包括提供基本解聚的碳纳米管的混合物，并且通过使用静电力使碳纳米管图案化。 混合物中的碳纳米管通常通过在单个纳米管上引入正电荷来分解。 碳纳米管的图案化通常使用预先形成的金属线和带电的碳纳米管之间的静电吸引来完成。

    Attachment-type optical coupler apparatuses
    66.
    发明授权
    Attachment-type optical coupler apparatuses 失效
    附件型光耦合器装置

    公开(公告)号：US07489842B2

    公开(公告)日：2009-02-10

    申请号：US11837296

    申请日：2007-08-10

    申请人： Kishio Yokouchi

    发明人： Kishio Yokouchi

    IPC分类号： G02B6/26

    CPC分类号： G02B6/24

    摘要： Optical couplers having attachment features are disclosed. A typical coupler according to the present invention couples an optical signal from an optical fiber to a channel waveguide by overlapping the cores of the optical fiber and channel waveguide along a portion of their waveguide lengths, with a spacing distance between the cores of not more than 20 microns for single-mode light coupling, and not more than 100 microns for multi-mode light coupling. This is in contrast to a prior art coupler, which seeks to position the ends of the two cores in a facing relationship. In embodiments according to the present invention, attachment films may be disposed in the overlapping regions to provide advantageous coupling arrangements and new types of opto-electric devices.

    摘要翻译： 公开了具有连接特征的光耦合器。 根据本发明的典型耦合器将光信号从光纤耦合到通道波导，通过沿其波导长度的一部分重叠光纤和通道波导的芯，其间的间距距离不大于 单模光耦合为20微米，多模光耦合不超过100微米。 这与现有技术的耦合器相反，该耦合器试图将两个芯的端部定位成面对的关系。 在根据本发明的实施例中，附着膜可以设置在重叠区域中以提供有利的耦合布置和新型的光电装置。

    Apparatuses and methods for integrating opto-electric components into the optical pathways of routing substrates with precision optical coupling and compact electrical interconnection
    67.
    发明授权
    Apparatuses and methods for integrating opto-electric components into the optical pathways of routing substrates with precision optical coupling and compact electrical interconnection 失效
    将光电组件集成到具有精密光耦合和紧凑电气互连的布线基板的光路中的装置和方法

    公开(公告)号：US07229219B2

    公开(公告)日：2007-06-12

    申请号：US10944082

    申请日：2004-09-17

    申请人： Michael G. Lee ,  Kishio Yokouchi

    发明人： Michael G. Lee ,  Kishio Yokouchi

    IPC分类号： G02B6/42

    CPC分类号： G02B6/4232 ,  G02B6/305

    摘要： Disclosed are apparatuses and methods for fast and reliable integration of opto-electric components onto optical routing substrates. Accurate alignment of optical signals to and from the opto-electric components, and short electrical interconnect paths to the components to reduce signal delays to the devices on the components are enabled. In an exemplary embodiment, an attachment area is set out on the optical routing substrate to receive each component. One or more optical waveguides for coupling optical signals with the component are located adjacent to the attachment area. A plurality of conductive pads are located within the attachment area, and are for interconnecting to the component by way of bodies of solder, conductive adhesive, or the like. Interspersed between the conductive pads are a plurality of spacers that set a spacing distance between the attachment area and the opposing surface of the component, resulting in accurate alignment of optical signals.

    摘要翻译： 公开了用于将光电组件快速可靠地集成到光路由基板上的装置和方法。 光信号与光电组件的准确对准，以及到组件的短电互连路径，以减少组件上的器件的信号延迟。 在示例性实施例中，在光学布线基板上设置附接区域以接收每个部件。 用于将光信号与该组件耦合的一个或多个光波导位于附接区附近。 多个导电垫位于附接区域内，并且用于通过焊料体，导电粘合剂等与部件互连。 散布在导电焊盘之间的是多个间隔件，其设置附接区域和部件的相对表面之间的间隔距离，导致光信号的精确对准。

    Variable optical attenuator
    68.
    发明授权
    Variable optical attenuator 有权
    可变光衰减器

    公开(公告)号：US07224881B2

    公开(公告)日：2007-05-29

    申请号：US11141880

    申请日：2005-05-31

    申请人： Shigenori Aoki ,  Kishio Yokouchi

    发明人： Shigenori Aoki ,  Kishio Yokouchi

    IPC分类号： G02B6/00

    CPC分类号： G02B6/125 ,  G02B6/266 ,  G02F1/0118 ,  G02F1/29 ,  G02F2203/48

    摘要： An apparatus for attenuating a light signal is disclosed. The apparatus causes optical attenuation in a waveguide, where the waveguide has an input port for receiving a light signal and an output port for output of an attenuated light signal. First, an electric field is generated in at least a portion of the waveguide, such that a first refractive index in that portion of the waveguide is changed to a second refractive index. Next, the light signal in the waveguide is directed from the input port to the output port through the electric field. And lastly, the light signal is attenuated as a function of the electric field. The light signal may be attenuated, for example, by changing the deflection angle, changing the beam collimation width or from emitting part of the light signal from the waveguide before the light signal reaches the output port.

    摘要翻译： 公开了一种用于衰减光信号的装置。 该装置在波导中引起光衰减，其中波导具有用于接收光信号的输入端口和用于输出衰减的光信号的输出端口。 首先，在波导的至少一部分中产生电场，使得波导的该部分中的第一折射率变为第二折射率。 接下来，波导中的光信号通过电场从输入端口引导到输出端口。 最后，光信号作为电场的函数衰减。 光信号可以例如通过改变偏转角，改变光束准直宽度或者在光信号到达输出端口之前从波导的光信号的一部分发射而衰减。

    Immersion cooling coolant
    70.
    发明授权
    Immersion cooling coolant 失效
    浸入式冷却液

    公开(公告)号：US06193905B1

    公开(公告)日：2001-02-27

    申请号：US08380312

    申请日：1995-01-30

    申请人： Mitsutaka Yamada ,  Kishio Yokouchi ,  Nobuo Kamehara ,  Koichi Niwa

    发明人： Mitsutaka Yamada ,  Kishio Yokouchi ,  Nobuo Kamehara ,  Koichi Niwa

    IPC分类号： C09K504

    CPC分类号： H01L23/427 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A coolant for cooling a semiconductor element by direct immersion, cooling, which has an improved cooling capability, is disclosed. The coolant comprises a low boiling point fluorocarbon having a boiling point of 30° C. to 100° C. and a high boiling point fluorocarbon having a boiling point higher than that of the low boiling point fluorocarbon by at least 100° C.; an amount of the high boiling point fluorocarbon being less than 20% by volume, based on the volume of the low boiling point fluorocarbon.

    摘要翻译： 公开了一种用于通过直接浸入，冷却来冷却半导体元件的冷却剂，其具有改进的冷却能力。 冷却剂包括沸点为30℃至100℃的低沸点碳氟化合物和沸点高于低沸点碳氟化合物的沸点至少为100℃的高沸点碳氟化合物; 基于低沸点碳氟化合物的体积，高沸点碳氟化合物的量小于20体积％。