公开(公告)号：US20070207275A1

公开(公告)日：2007-09-06

申请号：US11508544

申请日：2006-08-23

申请人： Thomas Nowak ,  Kang Sub Yim ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Vu Ngoc Tran Nguyen ,  Dennis Singleton ,  Martin Jay Seamons ,  Karthik Janakiraman ,  Ganesh Balasubramanian ,  Mohamed Ayoub ,  Wendy H. Yeh ,  Alexandros T. Demos ,  Hichem M'Saad

发明人： Thomas Nowak ,  Kang Sub Yim ,  Sum-Yee Betty Tang ,  Kwangduk Douglas Lee ,  Vu Ngoc Tran Nguyen ,  Dennis Singleton ,  Martin Jay Seamons ,  Karthik Janakiraman ,  Ganesh Balasubramanian ,  Mohamed Ayoub ,  Wendy H. Yeh ,  Alexandros T. Demos ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01J37/32357 ,  H01J37/32862

摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

摘要翻译： 提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。 这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。 反应性物质由含氧气体（例如O 2）和/或含卤素气体如NF 3 N产生。 在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

公开(公告)号：US20060094351A1

公开(公告)日：2006-05-04

申请号：US10977402

申请日：2004-11-01

申请人： Thomas Nowak ,  Srinivasan Ranganathan ,  Manoj Chauhan ,  Christopher Taylor ,  Anthony Massaro ,  John Schramm ,  Kevin Moscatiello ,  Nicholas Chilelli

发明人： Thomas Nowak ,  Srinivasan Ranganathan ,  Manoj Chauhan ,  Christopher Taylor ,  Anthony Massaro ,  John Schramm ,  Kevin Moscatiello ,  Nicholas Chilelli

IPC分类号： H04B7/19

CPC分类号： H04B7/19

摘要： An N-Tiered enterprise and/or N-Tiered Web-based enterprise system and methods for managing, monitoring, coordinating the procedures of and optionally controlling a fleet of geosynchronous satellites through a distributed network such as the Internet. The system and associated object oriented software architecture seamlessly supports monitoring and analyzing real-time, near real-time, historical/playback, simulated and archived satellite telemetry as well as Tracking, Telemetry and Control (TT&C) ground system generated data products such as real-time alerts, archived alerts and ground system server statuses from a group of legacy distributed TT&C wide area network (WAN) ground station systems located around the world.

摘要翻译： 一个N层次的企业和/或N层次的基于Web的企业系统和方法，用于通过分布式网络（如因特网）来管理，监控，协调地球同步卫星队列的过程和可选地控制。 系统和相关的面向对象的软件架构无缝支持监控和分析实时，近实时，历史/播放，模拟和存档的卫星遥测以及跟踪，遥测和控制（TT＆C）地面系统生成的数据产品，如真实 来自位于世界各地的一组传统分布式TT＆C广域网（WAN）地面站系统的时间警报，归档警报和地面系统服务器状态。

公开(公告)号：US20050263248A1

公开(公告)日：2005-12-01

申请号：US11131010

申请日：2005-05-16

申请人： Juan Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Kim ,  Hichem M'Saad ,  Daemian Raj

发明人： Juan Rocha-Alvarez ,  Ganesh Balasubramanian ,  Tom Cho ,  Deenesh Padhi ,  Thomas Nowak ,  Bok Kim ,  Hichem M'Saad ,  Daemian Raj

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23F1/00 ,  H01J37/32

CPC分类号： C23C16/45574 ,  C23C16/4405 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.

摘要翻译： 公开了将气体分配到处理室中的装置和方法。 在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。 第一气体通道通过阻挡板和气体分配板中的多个孔传送第一气体。 旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。

公开(公告)号：US06366346B1

公开(公告)日：2002-04-02

申请号：US09196459

申请日：1998-11-19

申请人： Thomas Nowak ,  Sebastien Raoux ,  Dave Silvetti ,  Stefan Wolff ,  Russ Newman ,  Imad Yousif ,  Ned Matthew

发明人： Thomas Nowak ,  Sebastien Raoux ,  Dave Silvetti ,  Stefan Wolff ,  Russ Newman ,  Imad Yousif ,  Ned Matthew

IPC分类号： G01R3100

CPC分类号： H01J37/32834 ,  C23C16/4401 ,  H01J37/32935

摘要： A method and apparatus for determining the composition of an effluent stream from a vacuum processing chamber. A cell placed in the effluent stream from the vacuum processing chamber creates a glow discharge from the constituents in the effluent stream. An optical detector measures a particular wavelength corresponding to the presence of a particular species. In one embodiment the output from the optical detector is used to determine the endpoint of a chamber cleaning process.

摘要翻译： 一种用于确定来自真空处理室的流出物流的组成的方法和装置。 从真空处理室放置在流出物流中的电池从流出物流中的成分产生辉光放电。 光学检测器测量对应于特定物种的存在的特定波长。 在一个实施例中，来自光学检测器的输出用于确定腔室清洁过程的终点。

公开(公告)号：US5634716A

公开(公告)日：1997-06-03

申请号：US550462

申请日：1995-10-30

申请人： Thomas L. Westall ,  Thomas Nowak ,  David R. Griffith ,  Earl L. Maltbie ,  Curtis L. Crandall

发明人： Thomas L. Westall ,  Thomas Nowak ,  David R. Griffith ,  Earl L. Maltbie ,  Curtis L. Crandall

IPC分类号： B01F13/00 ,  B01F13/10 ,  B28C7/04 ,  B65D88/30 ,  B01F15/04

CPC分类号： B28C7/0495 ,  B01F13/0016 ,  B01F13/0032 ,  B65D88/30 ,  B01F13/10 ,  Y10S414/132

摘要： A portable PVC resin blending system mounted in a semi-monocoque steel silo having multiple levels therein. The various components of the blending system are mounted within and attached to the silo and lifting lugs on the silo capable of lifting and tilting the silo from a vertical to a horizontal position for transportation and re-erection.

摘要翻译： 一种便携式PVC树脂混合系统，其安装在其中具有多个水平的半单壳式钢筒仓中。 混合系统的各种部件安装在筒仓中并连接到筒仓上，并将其连接到筒仓上，能够将料仓从垂直位置提升并倾斜以进行运输和重新安装。

公开(公告)号：US08563095B2

公开(公告)日：2013-10-22

申请号：US12724396

申请日：2010-03-15

申请人： Nagarajan Rajagopalan ,  Xinhai Han ,  Ryan Yamase ,  Ji Ae Park ,  Shamik Patel ,  Thomas Nowak ,  Zhengjiang “David” Cui ,  Mehul Naik ,  Heung Lak Park ,  Ran Ding ,  Bok Hoen Kim

发明人： Nagarajan Rajagopalan ,  Xinhai Han ,  Ryan Yamase ,  Ji Ae Park ,  Shamik Patel ,  Thomas Nowak ,  Zhengjiang “David” Cui ,  Mehul Naik ,  Heung Lak Park ,  Ran Ding ,  Bok Hoen Kim

IPC分类号： H05H1/24 ,  C23C16/34

CPC分类号： H01L21/02068 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/56 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/291 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1358 ,  H01L2224/13583 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.

摘要翻译： 描述了在衬底的特征上形成包括氮化硅的钝化层的方法。 在沉积方法的第一阶段中，将包含含硅气体和含氮气体的介电沉积气体引入工艺区域并通电以沉积氮化硅层。 在第二阶段中，将具有不同于介电沉积气体的组成不同的处理气体引入处理区并通电以处理氮化硅层。 第一和第二阶段可以执行多次。

公开(公告)号：US08329575B2

公开(公告)日：2012-12-11

申请号：US12977060

申请日：2010-12-22

申请人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

发明人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/31

CPC分类号： H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

摘要： A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

摘要翻译： 一种硅通孔制造方法包括蚀刻硅板中的多个通孔。 在硅板的表面和通孔的侧壁和底壁上沉积氧化物衬垫。 然后将金属导体沉积在通孔中。 在可与氧化物衬垫同时使用的另一种方案中，氮化硅钝化层沉积在衬底的硅板的暴露后表面上。

公开(公告)号：US20120270339A1

公开(公告)日：2012-10-25

申请号：US13093351

申请日：2011-04-25

申请人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

发明人： Bo Xie ,  Alexandros T. Demos ,  Kang Sub Yim ,  Thomas Nowak ,  Kelvin Chan

IPC分类号： H01L21/30

CPC分类号： H01L21/3105 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.

摘要翻译： 提供修复损坏的低k膜的方法。 在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。 低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。 包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

公开(公告)号：US07723228B2

公开(公告)日：2010-05-25

申请号：US10442359

申请日：2003-05-20

申请人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

发明人： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

IPC分类号： H01L21/4763

CPC分类号： H01L21/76838 ,  H01L21/02074 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76828 ,  H01L21/7684

摘要： Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

摘要翻译： 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US20050150452A1

公开(公告)日：2005-07-14

申请号：US10757021

申请日：2004-01-14

申请人： Soovo Sen ,  Mark Fodor ,  Martin Seamons ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Sudha Rathi ,  Tsutomu Shimayama ,  Thomas Nowak ,  Wendy Yeh

发明人： Soovo Sen ,  Mark Fodor ,  Martin Seamons ,  Priya Kulkarni ,  Visweswaren Sivaramakrishnan ,  Sudha Rathi ,  Tsutomu Shimayama ,  Thomas Nowak ,  Wendy Yeh

IPC分类号： C23C16/44 ,  C30B25/14 ,  C23C16/00

CPC分类号： C23C16/4412

摘要： The present invention provides a process kit for a semiconductor processing chamber. The processing chamber is a vacuum processing chamber that includes a chamber body defining an interior processing region. The processing region receives a substrate for processing, and also supports equipment pieces of the process kit. The process kit includes a pumping liner configured to be placed within the processing region of the processing chamber, and a C-channel liner configured to be placed along an outer diameter of the pumping liner. The pumping liner and the C-channel liner have novel interlocking features designed to inhibit parasitic pumping of processing or cleaning gases from the processing region. The invention further provides a semiconductor processing chamber having an improved process kit, such as the kit described. In one arrangement, the chamber is a tandem processing chamber.

摘要翻译： 本发明提供了一种用于半导体处理室的处理套件。 处理室是真空处理室，其包括限定内部处理区域的室主体。 处理区域接收用于处理的基板，并且还支持处理套件的设备件。 该处理套件包括构造成放置在处理室的处理区域内的泵送衬套，以及构造成沿着泵送衬套的外径放置的C形通道衬套。 泵送衬管和C通道衬管具有新颖的互锁特征，其设计用于抑制来自处理区域的处理或清洁气体的寄生泵送。 本发明还提供了一种具有改进的处理工具的半导体处理室，例如所述的套件。 在一种布置中，室是串联处理室。