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87 条记录 (耗时 0.053 秒)

    Magnetoresistance effect device having hard magnetic film structural body
    64.
    发明授权
    Magnetoresistance effect device having hard magnetic film structural body 失效
    具有硬磁性膜结构体的磁阻效应器件

    公开(公告)号：US07116527B1

    公开(公告)日：2006-10-03

    申请号：US08940020

    申请日：1997-09-29

    申请人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    发明人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  H01F10/132 ,  H01F10/16 ,  H01F10/3281 ,  H01L43/08

    摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.

    摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

    Magneto-resistance effect element having a magnetic biasing film
    68.
    发明授权
    Magneto-resistance effect element having a magnetic biasing film 失效
    具有磁偏置膜的磁阻效应元件

    公开(公告)号：US6118624A

    公开(公告)日：2000-09-12

    申请号：US69163

    申请日：1998-04-29

    申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki

    发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki

    IPC分类号： G11B5/012 ,  G11B5/31 ,  G11B5/39 ,  G11C11/15 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/012 ,  G11B5/3113 ,  G11B5/3954 ,  H01F10/3295

    摘要： A spin valve GMR element comprises a spin valve GMR film stacked in turn a pinned layer, a non-magnetic layer, and a free layer of which magnetization direction varies according to an external magnetic field, and a magnetic biasing film providing a bias magnetic field to the free layer. A spin valve GMR film can be a dual element type. A magnetic biasing film has a stacked film of a high saturation magnetization magnetic layer and a hard magnetic layer. The high saturation magnetization magnetic layer has saturation magnetization Ms.sup.high which, when saturation magnetization of the free layer is Ms.sup.free and saturation magnetization of the hard magnetic layer is Ms.sup.hard, satisfies at least one of Ms.sup.high .gtoreq.Ms.sup.free or Ms.sup.high .gtoreq.Ms.sup.hard. In a spin valve GMR head of a reversed structure or a dual element type, even when a track width is narrowed, occurrence of Barkhausen noise can be effectively suppressed.

    摘要翻译： 自旋阀GMR元件包括依次堆叠钉扎层，非磁性层和磁化方向根据外部磁场而变化的自由层的自旋阀GMR膜，以及提供偏置磁场的磁偏置膜 到自由层。 自旋阀GMR膜可以是双重元件型。 磁偏置膜具有高饱和磁化磁化层和硬磁性层的叠层膜。 高饱和磁化磁化层具有饱和磁化强度Mshigh，当自由层的饱和磁化强度为Msfree且硬磁层的饱和磁化强度为Mshard时，满足Mshigh> / = Msfree或Mshigh> / = Mshard中的至少一个。 在反转结构或双元件型的自旋阀GMR头中，即使轨道宽度变窄，也能够有效地抑制巴克豪森噪声的发生。

    Magnetoresistance effect element
    69.
    发明授权
    Magnetoresistance effect element 有权
    磁阻效应元件

    公开(公告)号：US6111729A

    公开(公告)日：2000-08-29

    申请号：US313767

    申请日：1999-05-18

    申请人： Yuzo Kamiguchi ,  Akiko Saito ,  Kazuhiro Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Akiko Saito ,  Kazuhiro Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/00 ,  G11B5/3967

    摘要： A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the metallic buffer layer and the first magnetic layer. Or a magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer composed of a laminated film of a magnetic undercoat layer and a ferromagnetic layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the middle non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the magnetic undercoat layer and the ferromagnetic layer.

    摘要翻译： 设置有由形成在金属缓冲层上的第一磁性层，形成在第一磁性层上的中间非磁性层和形成在非磁性层上的第二磁性层构成的自旋阀膜的磁阻效应元件具有 在金属缓冲层和第一磁性层之间的界面形成平均厚度为2nm以下的原子扩散阻挡层。 或设置有由由磁性底涂层和铁磁层的层叠膜构成的第一磁性层，形成在第一磁性层上的中间非磁性层和第二磁性层构成的自旋阀膜的磁阻效应元件 在中间非磁性层上形成的平均厚度为2nm以下的原子扩散阻挡层形成在磁性底涂层和铁磁层之间的界面中。